Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SOI (silicon on insulator) substrate based ring-gate radiation-proof MOS (metal oxide semiconductor) field-effect transistor

A field effect tube and anti-irradiation technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of device threshold voltage drift, off-state leakage current increase, sub-threshold swing degradation, etc., and achieve off-state leakage current Reduction, Leakage Current Reduction, Effect of Elimination of Effects

Inactive Publication Date: 2017-02-22
XIDIAN UNIV
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The parasitic channel introduced by shallow trench isolation STI will lead to device threshold voltage drift, sub-threshold swing degradation and off-state leakage current increase,

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SOI (silicon on insulator) substrate based ring-gate radiation-proof MOS (metal oxide semiconductor) field-effect transistor
  • SOI (silicon on insulator) substrate based ring-gate radiation-proof MOS (metal oxide semiconductor) field-effect transistor
  • SOI (silicon on insulator) substrate based ring-gate radiation-proof MOS (metal oxide semiconductor) field-effect transistor

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0045] Example 1, making a SOI substrate MOS field effect transistor with a square gate ring.

[0046] Step 1, preparing an SOI substrate.

[0047] 1.1) At a temperature of 600°C, a P-type Si substrate with a thickness of 600nm was treated with a concentration of 1.7×10 18 cm -2 , Oxygen ion implantation with an energy of 180KeV;

[0048] 1.2) Annealing the P-type Si substrate after oxygen ion implantation at a high temperature of 1300°C for 5h;

[0049] 1.3) After the annealing process is completed, the prepared SOI substrate is rinsed with 5% hydrofluoric acid HF for 5 minutes, and cleaned with water for 10 minutes.

[0050] Step 2, generating an epitaxial layer.

[0051] 2.1) On the SOI substrate, grow a Si epitaxial layer with a thickness of 300nm, and the process conditions are: the reactant is SiCl 4 with H 2 ,, the temperature is 1100°C;

[0052] 2.2) The depth of the epitaxial layer is 100nm, the concentration is 2×10 17 cm -3 The boron ion doping is used to a...

example 2

[0077] Example 2, making a SOI substrate MOS field effect transistor with a rectangular gate ring.

[0078] Step 1, preparing an SOI substrate.

[0079] First, under the condition that the temperature is 650° C., the P-type Si substrate (1) with a thickness of 900 nm is treated with a concentration of 1.7×10 18 cm -2 , Oxygen ion implantation with an energy of 180KeV; then annealing at a high temperature of 1300°C for 5.5h; finally rinsing with 5% hydrofluoric acid HF for 5min, and cleaning with water for 10min.

[0080] Step 2, generating an epitaxial layer.

[0081] On the SOI substrate, through the epitaxial process at a temperature of 1100 ° C, SiCl 4 with H 2 As a reactant, grow a Si epitaxial layer with a thickness of 300nm; 17 cm -3 Doping with boron ions to adjust the channel concentration.

[0082] Step 3, etching the isolation groove.

[0083] Thin SiO with a thickness of 8 nm was grown by thermal oxidation at a temperature of 1200 °C on the epitaxial layer by ...

example 3

[0095] Example 3, fabricating a SOI substrate MOS field effect transistor with a circular gate ring.

[0096] Step A, preparing an SOI substrate.

[0097] A1) At a temperature of 700°C, a P-type Si substrate with a thickness of 1200nm was treated with a concentration of 1.7×10 18 cm -2 , Oxygen ion implantation with an energy of 180KeV;

[0098] A2) Annealing the P-type Si substrate after oxygen ion implantation at a high temperature of 1300° C. for 6 hours;

[0099] A3) After the annealing process is completed, the prepared SOI substrate is rinsed with 5% hydrofluoric acid HF for 5 minutes, and cleaned with water for 10 minutes.

[0100] Step B, substrate doping.

[0101] B1) On the SOI substrate, the SiCl 4 with H 2 As a reactant, grow a Si epitaxial layer with a thickness of 300nm;

[0102] B2) The depth of the epitaxial layer is 150nm, and the concentration is 1×10 18 cm -3 Doping with boron ions to adjust the channel concentration.

[0103] Step C, etching the i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Widthaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an SOI (silicon on insulator) substrate based ring-gate radiation-proof MOS (metal oxide semiconductor) field-effect transistor. The field-effect transistor comprises an Si substrate (1), a buried oxide layer (2) located in the Si substrate (1) and an epitaxial layer (3) on the Si substrate (1), a drain region (5) is arranged in the middle of the epitaxial layer, a ring gate (4) is arranged over the epitaxial layer and next to the outer boundary of the drain region, lightly doped source drain regions (7) are arranged in the epitaxial layer under the edges of the inner and outer sides of the ring gate (4), and a region between the lightly doped source drain regions forms a channel; a ring source active region (6) is arranged in the epitaxial layer next to the outer edge of the gate, and a ring isolation channel (8) is arranged in the epitaxial layer adjacent to the periphery of the ring source active region (6) and is of a loop structure comprising a gate ring, a source ring and an isolation channel ring sequentially encircling the outside of the passive region. By the field-effect transistor, threshold voltage shift and subthreshold swing degradation are inhibited, total dose radiation performance tolerance of the device is enhanced, and the field-effect transistor is used for preparation of large-scale integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to an SOI substrate field-effect transistor resistant to total dose radiation, which can be used in the preparation of large-scale integrated circuits. Background technique [0002] Since the ionizing radiation effect of metal oxide semiconductor field effect transistor MOSFET was first discovered in 1964, the total dose effect of ionizing radiation has been one of the most important factors leading to the degradation of device functions for electronic system devices and circuits used in space. The total dose effect refers to the effect that when ionizing radiation particles with energy greater than the forbidden band width of the semiconductor irradiate the semiconductor, some bound state electrons inside the semiconductor absorb the energy of the radiation particles and are excited to the conduction band to generate electron-hole pairs. Studies have shown that the to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L21/336H01L29/423
CPCH01L29/78H01L29/42356H01L29/66477
Inventor 刘红侠刘贺蕾冯兴尧陈树鹏赵璐汪星王倩琼李伟
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com