A reconfigurable field effect transistor with asymmetric structure

A field effect transistor, asymmetric technology, applied in the field of reconfigurable field effect transistors, can solve the problem of device on-state current weakening and other problems, achieve steep sub-threshold swing, control leakage current, and improve the current switching ratio.

Active Publication Date: 2018-12-18
EAST CHINA NORMAL UNIV +1
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  • Abstract
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Problems solved by technology

However, due to the existence of "underlap" at both ends of the device, the on-state current of the device is also weakened to a certain extent, so how to keep the off-state current of the device small enough, increase the on-state current of the device, and increase the current switching ratio of the device are urgently needed to be solved. The problem

Method used

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  • A reconfigurable field effect transistor with asymmetric structure
  • A reconfigurable field effect transistor with asymmetric structure
  • A reconfigurable field effect transistor with asymmetric structure

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Embodiment 1

[0017] See attached Figure 1 to Figure 3 , the present invention consists of a source electrode 3 and a drain electrode 4 arranged at both ends of the channel 1, as well as a control gate 5, a polarity gate 6 and a sidewall 7 respectively arranged on one side of the source electrode 3 and the drain 4 to form an asymmetrical The reconfigurable field effect transistor of the type structure, the channel 1 between the polar gate 6 and the drain 4 is an under-overlapping region 8 provided with a spacer 7; the channel 1 is a carbon nanotube, Graphene tube or silicon nanowire material; the source electrode 3 and the drain electrode 4 are electrodes formed by nickel silicide or nickel disilicide deposited on the outer layer of the channel 1; the control gate 5 and the polarity gate 6 is the electrode formed by the photolithography of the gate oxide dielectric layer 2 deposited on the outer layer of the channel 1; the sidewall 7 is the silicon nitride, silicon dioxide or low-K dielect...

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Abstract

The invention discloses a reconfigurable field effect transistor with an asymmetric structure, comprises a source electrode and a drain electrode arranged on both ends of the channel, and a field effect transistor composed of a control gate electrode and a polar gate electrode respectively arranged on one side of the source electrode and the drain electrode. The polar gate electrode is provided with an underoverlapped region of a deposition side wall on the side close to the drain electrode to form a reconfigurable field effect transistor with an asymmetric structure. Compared with the prior art, the device of the invention has ideal on-state, off-state current, larger current switching ratio, steep subthreshold swing and the like. The current switching ratio is improved significantly whenthe device is of an n-FET structure compared with a p-FET structure, and the off-state current is almost the same compared with a symmetric reconfigurable transistor, so the leakage current is controlled effectively.

Description

technical field [0001] The invention relates to the technical field of transistor logic devices, in particular to a reconfigurable field effect transistor with an asymmetric structure for CMOS ultra-large integrated circuits. Background technique [0002] As device dimensions continue to shrink, their physical limits may be reached within the next decade, so new ways to enhance device functionality are required while keeping device dimensions constant. Device-level reconfigurability promises more complex circuits with lower device counts. In the past few years, several novel structures have been proposed to achieve device reconfigurability, in these reconfigurable field effect transistors (RFETs), by applying different voltage biases to the dual gates, Adjust the polarity of the device channel carrier to realize the rotation of n-type device and p-type device. When the control gate voltage (VG1) is swept from negative to positive and the drain and polarity gate (G2) are he...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66484H01L29/7832
Inventor 姚岩孙亚宾李小进石艳玲王昌锋廖端泉田明曹永峰
Owner EAST CHINA NORMAL UNIV
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