A kind of neodymium indium zinc oxide thin film transistor and its preparation method
A technology of oxide thin film and transistor, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, semiconductor device, etc., can solve the problems of difficult to realize MOSTFT, carrier mobility reduction, unfavorable flexible display devices, etc., and achieve short time consumption, The effect of high mobility and simple process
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment
[0027]A method of preparing a rye indium zinc oxide thin film transistor in this embodiment, the specific steps are as follows:
[0028](1) The 300 nm Al metal film is deposited on the glass substrate by a DC sputtering method at room temperature and patterning with a mask plate.
[0029](2) Allowance of 200 nm of 200 nm in the gate to Al by anode oxidation method2O3As the gate insulating layer;
[0030](3) Nd-IZO semiconductor active layer was prepared by radio frequency sputtering method, and each material ratio in the indium zinc oxide (ND)2O3: In2O3: ZnO wt.%) Is 1: 62.5: 36.5 wt.%. The total pressure of the sputter is 3 mTorr, the sputter atmosphere is Ar / O2= 100 / 5 mixed gas, RF power power is 60 W, the sputtering time is 215 s; the thickness of the Nd-IZO semiconductor active layer is about 9 nm;
[0031](4) Preparation of ultra-thin Al by radio frequency sputtering at room temperature2O3The passivation layer, the sputtering total pressure is 1 mTorr, the sputtering atmosphere is a pure...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
width | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com