The invention provides a semiconductor memory. The semiconductor memory is not provided with a control grid, wherein as a first erasure grid and a second erasure grid are respectively arranged on a first floating grid and a second floating grid, the semiconductor memory can directly conduct the erasure operation through the first erasure grid and the second erasure grid in the erasure stage, a higher erasure pressure does not need to be applied to a first bit line or a second bit line, therefore, the thickness of a word line oxidizing medium layer between the bit line and a semiconductor substrate can be reduced, the firing current is improved, the leak current can also be reduced at the same time, a lower closing current is kept, meanwhile, the reading current of the bit line is reduced during reading, so that the power consumption of the semiconductor memory is saved.