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Photomask, thin film transistor element and manufacturing method of thin film transistor element

A thin-film transistor and photomask technology, applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of decreased aperture ratio, difficulty, increased resistance and capacitance load, etc., and achieve the effect of high turn-on current

Active Publication Date: 2009-12-09
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The general way to increase the turn-on current is to increase the channel width of the thin film transistor element. However, increasing the channel width of the thin film transistor element has the disadvantages of decreasing the aperture ratio and increasing the resistance and capacitance load.
On the other hand, reducing the channel length of thin film transistors can also increase the turn-on current, but this method is limited by the limits of the current photomask and photolithography process, and there are considerable difficulties

Method used

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  • Photomask, thin film transistor element and manufacturing method of thin film transistor element
  • Photomask, thin film transistor element and manufacturing method of thin film transistor element
  • Photomask, thin film transistor element and manufacturing method of thin film transistor element

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Embodiment Construction

[0027] In order to enable those skilled in the art to further understand the present invention, several preferred embodiments of the present invention are listed below, and together with the accompanying drawings, the composition and desired effects of the present invention are described in detail.

[0028] Please refer to figure 1 . figure 1 A schematic diagram of a photomask according to a preferred embodiment of the present invention is shown. In this embodiment, the photomask 10 may be a grayscale photomask (GTM), a halftone mask (HTM), or other photomasks with different light transmittances in different regions . The photomask 10 of this embodiment includes a first light-shielding pattern 12 , a second light-shielding pattern 14 , a light-transmitting single slit 16 and a semi-light-transmitting pattern 18 . The first shading pattern 12 includes a first side 121 and a second side 122 , the second shading pattern 14 includes a third side 143 and a fourth side 144 , and ...

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Abstract

The invention provides a photomask, a thin film transistor element and a manufacturing method of the thin film transistor element. The photomask comprises a first shading pattern, a second shading pattern, a translucent single slit and a semi-translucent pattern, wherein the translucent single slit is positioned between the first shading pattern and the second shading pattern; the width of the translucent single slit is between 1.5 and 2.5 microns; and the semi-translucent pattern is connected with the first shading pattern and the second shading pattern. The photomask adopts a design of the translucent single slit and the semi-translucent pattern, wherein the translucent single slit can reduce the channel length making the thin film transistor element; and the semi-translucent pattern can define an extension part of a semiconductor layer. Therefore, the thin film transistor element has a higher starting current.

Description

technical field [0001] The present invention relates to a thin film transistor element, a photomask for defining the thin film transistor element, and a method for making the thin film transistor element, in particular to a photomask that can increase the channel length limit of the thin film transistor element, a photomask with a short A thin film transistor element with channel length and a method of making the same. Background technique [0002] In a thin film transistor liquid crystal display panel (TFT-LCD panel), the thin film transistor element is used as a switching element for controlling each pixel electrode. When the size and resolution of the liquid crystal display panel increase, the size of the pixel electrode also increases, so the thin film transistor must provide a larger turn-on current (Ion) to improve the charging capability. As is well known to those of ordinary skill in the art, the magnitude of the turn-on current is proportional to the channel width / ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14H01L29/786H01L21/336G03F1/54
Inventor 张家铭萧祥志
Owner AU OPTRONICS CORP
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