Oxide thin film transistor, manufacturing method thereof, array substrate and display device

A technology of oxide film and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc., and can solve the problems of long and difficult channel length
CN103545378AActive Publication Date: 2014-01-29BOE TECH GRP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
BOE TECH GRP CO LTD
Publication Date
2014-01-29

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Abstract

The invention provides an oxide thin film transistor, a manufacturing method of the oxide thin film transistor, an array substrate and a display device, and relates to the technical field of liquid crystal display. The manufacturing method of the oxide thin film transistor includes the steps that a grid electrode, a grid insulating layer and an oxide semiconductor thin film are sequentially formed in a substrate; first photoresist is formed in an active layer area of the oxide semiconductor thin film, and a channel area is thicker than a non-channel area; the first photoresist of the channel area is reserved; a source drain metal thin film is formed on active layer patterns, second photoresist on the source drain metal thin film is reserved, and the edge of the first photoresist of the channel area is covered with the source drain metal thin film; source electrode patterns and drain electrode patterns are obtained. According to the oxide thin film transistor, the manufacturing method of the oxide thin film transistor, the array substrate and the display device, when the initial source electrode patterns and the initial drain electrode patterns are formed, the photoresist is utilized to replace a protective layer to protect an active layer, the final source electrode patterns and the final drain electrode patterns are formed through a photoresist stripping technology, and therefore the length of a channel of the oxide thin film transistor is shortened.
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Description

technical field

[0001] The invention relates to the technical field of liquid crystal display, in particular to an oxide thin film transistor and a manufacturing method thereof, an array substrate, and a display device. Background technique

[0002] In liquid crystal display technology, ADS (Advanced Super Dimension Switch, advanced ultra-dimensional field switching technology) mode gradually replaces TN (Twisted Nematic) liquid crystal mode with the advantages of high transmittance, wide viewing angle, fast response speed and low power consumption, and has become One of the important technologies in the field of liquid crystal display.

[0003] In the ADS mode, the oxide thin film transistor forms a protective layer 13 on the IGZO (indium gallium zinc oxide, indium gallium zinc oxide) layer forming the channel, such as figure 1 , figure 2 Shown are respectively the cross-sectional view and the top view of the existing oxide thin film transistor, wherein the source 2 and ...

Claims

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