semiconductor memory

A memory and semiconductor technology, applied in the direction of semiconductor devices, static memory, read-only memory, etc., can solve the problems of increased chip area, small storage device circuit, etc., and achieve the effect of reducing leakage current, small turn-off current and increasing turn-on current

CN102983139BActive Publication Date: 2017-09-29SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2017-09-29

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Abstract

The present invention provides a semiconductor memory. The semiconductor memory of the present invention is not provided with a control gate, and by disposing a first erase gate and a second erase gate on the first floating gate and the second floating gate respectively, then In the erasing phase, the semiconductor memory can directly perform erasing operations through the first and second erasing gates, and there is no need to apply a higher erasing voltage to the first bit line and the second bit line. , therefore the thickness of the word line oxide dielectric layer between the word line and the semiconductor substrate can be reduced. Reducing the thickness of the word line oxide dielectric layer not only increases the turn-on current, but also reduces the leakage current and maintains a small turn-off current. When reading, the read voltage of the word line is reduced, thereby saving the power consumption of the semiconductor memory.
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Description

technical field

[0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor memory. Background technique

[0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electrically erasable and programmable read-onl...

Examples

Embodiment Construction

[0042] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0043] Secondly, the present invention is described in detail using schematic diagrams. When describing the examples of the present invention in detail, for the sake of illustration, the schematic diagrams are not partially enlarged according to the general scale, which should not be used as a limitation of the present invention.

[0044] figure 1 It is a structural schematic diagram of the semiconductor memory of the present invention. Such as figure 1 As shown, the present invention provides a semiconductor memory, comprising several memory cells arranged in ar...