semiconductor memory

Abstract

The present invention provides a semiconductor memory. The semiconductor memory of the present invention is not provided with a control gate, and by disposing a first erase gate and a second erase gate on the first floating gate and the second floating gate respectively, then In the erasing phase, the semiconductor memory can directly perform erasing operations through the first and second erasing gates, and there is no need to apply a higher erasing voltage to the first bit line and the second bit line. , therefore the thickness of the word line oxide dielectric layer between the word line and the semiconductor substrate can be reduced. Reducing the thickness of the word line oxide dielectric layer not only increases the turn-on current, but also reduces the leakage current and maintains a small turn-off current. When reading, the read voltage of the word line is reduced, thereby saving the power consumption of the semiconductor memory.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor memory. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electrically erasable and programmable read-onl...

AI Technical Summary

Problems solved by technology

However, since the split-gate flash memory has one more word line than the stacked-gate flash memory, the area of ​​the chip will also increase. In order to introduce memory cells with higher packing density into semiconductor memory devices, the design layout of the memory device circuits must also be changed accordingly. in smaller and smaller sizes

Images