37results about How to "Reduce electrical influence" patented technology

The invention relates to a surface modified carbon nanotube, the surface of which is grafted with hyperbranched polysiloxane containing a phosphaphenanthrene structure and epoxide groups through chemical bonding. A preparation method for the surface modified carbon nanotube comprises the following steps: mixing prepared hyperbranched polysiloxane containing a phosphaphenanthrene structure and epoxide groups with a functionalized carbon nanotube, adding the catalyst triphenylphosphine, adding an obtained mixture into a solvent, carrying out ultrasonic treatment, and removing the solvent after a reaction is finished so as to obtain the surface modified carbon nanotube. The surface modified carbon nanotube provided in the invention contains active reactive groups, can well disperse in thermosetting resin and endows the thermosetting resin with good flame resistance and toughness on the basis of maintaining heat resistance and rigidity of the thermosetting resin; therefore, the surface modified carbon nanotube has immense application potential in the fields of research and development of novel high-molecular materials, modification, high performance development and multi-functionalization of polymers, etc.

The invention relates to a TFT-LCD array substrate and a manufacturing method thereof. The array substrate comprises a grid wire, a data wire, a pixel electrode and a thin film transistor. The array substrate is characterized in that the thin film transistor comprises a grid electrode connected with the grid wire and a source electrode connected with the data wire; at least one through hole is formed on the grid electrode or a through groove is formed on at least one side of the grid electrode; and a semiconductor layer which is connected with the pixel electrode and the source electrode respectively is filled in the through hole or the through groove. The array substrate changes a 'planar type' TFT structure which is universally adopted in the prior art, changes the planar structure into a spatial structure, and has the characteristics of simple and compact structure, good parameter property, simple manufacturing process and the like. The array substrate realizes the effect of increasing the starting current and has certain improvement on other electrical parameters, and the spatial structure of the array substrate reduces the planar size and increases the spatial utilization rate so as to increase the opening ratio.

A display capable of reducing an electric effect of a color filter on a pixel circuit, and thereby suppressing degradation in display quality is provided. The display includes a pixel drive substrate having a color filter, a display function layer provided on the pixel drive substrate, a first electrode and a second electrode to supply a drive voltage to the display function layer, and a third electrode disposed to face the color filter.

The invention relates to a method for preparing high-tap-density silver flake. The method comprises the following steps of S1, preparation of a solution, S2, reduction reaction, S3, cleaning and filtering, S4, ball milling of silver powder, S5, drying of the silver powder, and S6, screening and testing of the silver powder. The method is simple in process and good in reproducibility in the preparation process, and industrialized production can be achieved.

The invention provides an array substrate, a preparation method thereof and a display device. The array substrate comprises a substrate body, an active layer, a gate insulation layer, a conductor action layer, a dielectric layer and a source-drain electrode layer. The conductor action layer is arranged on the substrate and covers the active layer, the gate insulation layer and the gate layer. Andthe conductor action layer contains active metal.

A kind of soft propenoic acid latex is involved in this invention, whose formula has monomer with non saturated bond, emulsifying agent, and water. The said monomer contains methacrylate acetyl ether caproate whose content is 1.01-3.03% weight percentage in total latex besides propenoic acid and acrylate, methacrylate, styrene etc. contents. The invention acts methacrylate acetyl ethyl caproate as crosslinking agents which differs with other electriferous hydronium crosslinking agents because it produces short time polarity and produces crosslinking, and no confected latex has A-OK chemistry stability and can aggregate with cement as waterproof layer and tile putty having chapproof and alkaliproof capabilities, settless technical problem of properoic acid latex happening latex-broke when it meets strong electrolyte and not mixing with cement.

The invention relates to a method for manufacturing a solar thin film light transmitting component, belonging to the technical field of photovoltaic application. The manufacturing method adopts the following technical scheme: a front transparent electric conductive electrode, a thin film photoelectric conversion layer and a back electric conductive electrode are deposited on an insulating light transmitting substrate, and a plurality of son batteries are formed by cutting off the three thin films; then mechanical inscribing equipment is used for removing the front transparent electric conductive electrode, the thin film photoelectric conversion layer and the back electric conductive electrode (or the thin film photoelectric conversion layer and the back electric conductive electrode) in a direction parallel to or vertical to the son batteries, a pattern is inscribed by adjusting a needle head the equipment; as the photoelectric conversion layer in the patter is removed, therefore, lights can directly penetrate through the battery, thereby realizing the light transmitting function of the component. The manufacturing method can be used for realizing the preparation of the novel light transmitting component and has the characteristics of low cost, high efficiency, simple operation, short time consumption and the like while the output electrical property and the light transmission performance of the novel light transmitting component are not lower than that of the light transmitting component of the solar thin film battery prepared by the prior art.

The invention discloses a regulating method for distributed MEMS phase shifter working voltage based on phase shift magnitude electromechanical coupling. The regulating method comprises the steps that structural parameters, material properties and electromagnetic working parameters of distributed MEMS phase shifters are determined; a working voltage standard value V<0> and a phase shift magnitude standard value deltaphi<0> are determined; working voltage of 2V<0> is applied, and phase shift magnitude deltaphi in M MEMS bridges is measured; the phase shift magnitude measured value deltaphi and the standard value deltaphi<0> are compared; when the phase shift magnitude measured value deltaphi is greater than the standard value deltaphi<0>, upward height error of the MEMS bridges is obtained, and equivalent circuit parameters and working voltage regulating amount are calculated; when the phase shift magnitude measured value deltaphi is less than or equal to the standard value deltaphi<0>, downward height error or the state of error free of the MEMS bridges is obtained, the equivalent circuit parameters and a height error value are calculated, and the working voltage regulating amount is calculated; whether all the working voltage regulating amount is calculated is judged; the working voltage regulating amount is applied to the corresponding MEMS bridges again, and the overall phase shift magnitude of the distributed MEMS phase shifters is measured; and whether electrical performance of the distributed MEMS phase shifters after working voltage regulation can meet the indicator requirements is judged. Theoretical guidance is provided for reliability of practical work.

The invention discloses a minimized high-isolation ceramic packaging structure including a pipe case (a), a chip (b), a metal cover plate (c) and a bonding wire (d); the pipe case (a) is composed of a ceramic layer (a1), a metallization layer (a2) and an interconnection blind hole (a3); the metallization layer (a2) is composed of a bonding finger layer (a21), a sealing area (a22), a connection area (a23), a bonding chip area (a24) and a printed circuit board trace layer (a25); the pipe case(a) is provided in the center thereof with the bonding chip area (a24) for displacing the chip, and the circumference of the bonding chip area (a24) is provided with the bonding finger layer (a21) which includes a grounding bonding finger (a211) and a signal bonding finger (a212). The structure herein has the beneficial effects that stratum isolation technology is adopted, and space stereo-wrapping is conducted on the high-isolation bonding finger, and a space "sandwich" structure is formed; the structure can markedly reduce cross talk and coupling effect of the signal channels, reduce signal loss, increase isolation level, and reduce impact of packaging on the electrical property of the products, provided that the high reliability of the packaging is guaranteed by the structure.

A method of driving a pixel circuit is provided. The pixel circuit includes a light emitting element that emits light by receiving a driving current, a driving transistor that generates the driving current, and a light-emission control transistor of the same conductivity type as that of the driving transistor, the light-emission control transistor being arranged on a path through which the driving current flows from the driving transistor to the light emitting element. The method includes setting the gate potential of the light-emission control transistor so that the light-emission control transistor is turned on in the saturation region for a light emitting period during which the light emitting element is allowed to emit light.

The invention discloses a brassylic acid glycidyl ester modified hexamethylenediamine curing agent and a preparation method and applications thereof. The preparation method comprises the following steps: at first, carrying out esterification reactions between brassylic acid and epoxy chloropropane under the effect of a catalyst in a toluene solvent at a controlled temperature of 80-110 DEG C to obtain a chloro-alcohol ester intermediate; mixing the chloro-alcohol ester intermediate with a sodium hydroxide water solution, carrying out cyclization reactions at a controlled temperature of 40-85 DEG C to obtain brassylic acid glycidyl ester; and finally, carrying out amination reactions between brassylic acid glycidyl ester and hexamethylenediamine at a temperature of 60 to 75 DEG C to obtain the brassylic acid glycidyl ester modified hexamethylenediamine curing agent. The prepared brassylic acid glycidyl ester modified hexamethylenediamine curing agent has a high amine value, can be used with epoxy resin (epoxy resin E51, for example) to carry out curing, and has an excellent toughening effect on a cured product. The preparation method has the advantages of simple production technology, convenient operation, high output, and suitability for industrial production.

The invention discloses a dimeric fatty acid-diglycidol ester modified amine hardener, a preparation method and an application. The preparation method comprises the steps: firstly, subjecting dimericfatty acid and epichlorohydrin to an esterification reaction for 1.5 to 3.0 hours in the presence of a catalyst while controlling a temperature to 80 DEG C to 110 DEG C, so as to obtain a chlorohydrinester intermediate; then, subjecting the chlorohydrin ester intermediate and a sodium hydroxide aqueous solution with the mass percent concentration of 20% to 50% for 2 to 5 hours at the temperatureof 40 DEG C to 85 DEG C, so as to obtain a dimeric fatty acid-diglycidol ester; and finally, subjecting the dimeric fatty acid-diglycidol ester and diethylenetriamine to an amination reaction for 1 to4 hours at the temperature of 60 DEG C to 75 DEG C, thereby obtaining the dimeric fatty acid-diglycidol ester modified amine hardener. The obtained dimeric fatty acid-diglycidol ester modified aminehardener has a relatively high amine number and has excellent toughening performance to the hardening of epoxy resin. The preparation process is simple, and the operation is convenient, so that the preparation method is applicable to large-scale industrial production.

The invention provides a resistive non-volatile memory device, which comprises a bottom electrode contact plug, a bottom electrode, a resistive switching layer, a top electrode, anda top electrode contact plug, wherein the bottom electrode is arranged on the bottom electrode plug and is in contact with the bottom electrode plug; the resistive switching layer is arranged on the bottom electrode; the top electrode is arranged on the resistive switching layer; the top electrode contact plug is arranged on the top electrode and is in contact with the top electrode; and the bottom electrode contact plug and the top electrode contact plug are mutually separated by a certain distance in a top view direction. The invention provides the resistive non-volatile memory device with the advantages that through the arrangement of the electrode contact plugs, the top electrode contact plug can be far away from a partial MIM (Metal-Insulator-Metal) overlapped layer positioned right above the bottom electrode contact plug, so that the influence on the electrical property of elements due to the top surface profile of the bottom electrode contact plug is reduced; and thus, the resistive switching resistance variation amount of the elements can be reduced.

The embodiment of the invention provides a display panel and a display device, relates to the technical field of display, and can improve the light extraction efficiency of the display panel. The display panel adopts a silicon substrate and the display panel includes a plurality of light emitting units, and each of the light emitting units includes a light emitting layer; the plurality of light emitting units include a plurality of first light emitting units and a plurality of second light emitting units, wherein various light emitting layers in the first light emitting units are not adjacentto each other; and the second light emitting units comprise at least two layers of specific light emitting layers which are adjacent to each other and share a carrier transmission layer.

The invention relates to a piezoelectric module and an electronic device. A piezoelectric module includes a substrate having a working surface; a piezoelectric unit, arranged on the working surface ofthe substrate, the piezoelectric unit being provided with a first side and a second side which are oppositely arranged in the direction parallel to the working surface, and the first side and the second side being each provided with a side electrode; a first extension electrode, arranged on one side, far away from the substrate, of the piezoelectric unit; a conductive bonding structure, arrangedbetween the substrate and the piezoelectric unit, or arranged on the substrate and positioned on the side edge of the electrode on the corresponding side of the piezoelectric unit, so that the piezoelectric unit is electrically connected with the substrate; a first insulation protection layer, arranged on the surface, far away from the substrate, of the piezoelectric unit and covering the first extension electrode; and a second insulating protection layer covering the side electrodes on the surfaces of the first side and the second side of the piezoelectric unit and extending to the working surface of the substrate from the first side and the second side, so that the conductive bonding structure is isolated from the outside.

The invention discloses a laser marking method of a silicon wafer and a manufacturing method of a heterojunction cell. The laser marking method comprises the steps: enabling a pattern of a marking line to generate a marking code through setting marking parameters; inputting the marking code to a laser; and the laser being used to emit light beams to the surface of the silicon wafer according to the marking code, and the light beams being used to etch the surface of the silicon wafer to obtain the marking line. The marking line comprises a scribing line formed on the surface of the silicon wafer, and the scribing line comprises a solid line segment formed after the surface of the silicon wafer is etched by the laser and a dotted line segment which is not etched by the laser. According to the laser marking method, the mechanical damage to the silicon wafer in the laser marking process can be reduced to the greatest extent, the damaged surface formed on the silicon wafer is relatively smooth, and the silicon wafer does not have a shadow under PL imaging; and after the heterojunction cell is prepared, the electric leakage phenomenon at the laser code printing position is less, the electrical property is better, and the cell conversion efficiency is high. In addition, after the silicon wafer is textured and cleaned, a pyramid textured surface can be formed at the etching position, so that the influence of the silicon wafer on light absorption is avoided.

The invention provides a pixel structure based on an oxide thin film transistor, an X-ray detector and a production method thereof. The pixel structure comprises a substrate, an oxide thin film transistor, a visible light sensor and an auxiliary protection structure. The auxiliary protection structure is arranged above the oxide thin film transistor, is separated from the oxide thin film transistor through an isolation layer, and at least covers the edge of the active layer. A novel pixel structure is designed by introducing the auxiliary protection structure, a thin film transistor device can be effectively protected, a leakage current of a deteriorated thin film transistor in a photoelectric sensor film forming and high-temperature manufacturing process and the like is reduced, and the influence of the subsequent manufacturing process on the electrical property of the thin film transistor is reduced; and the influence of hydrogen atoms on the oxide thin film transistor in production of the visible light sensor can be effectively improved, a low leakage current and device electrical uniformity of the oxide thin film transistor are realized, a process window of a panel is expanded, and the working reliability of the sensor is improved.

The invention discloses a display device, a display panel and a manufacturing method for the same. The display panel has a first substrate, an active switch mounted on the first substrate, a protection layer covering the active switch, a pixel electrode arranged on the active switch and coupled with the active switch, a supporting layer formed in the protection layer, a second substrate arranged corresponding to and parallel to the first substrate, a color-resistant layer arranged on the first substrate or the second substrate, a spacing unit formed in the second substrate, wherein spacing unit is correspondingly arranged over the supporting layer and effectively reduces deformation of the active switch when external force is applied to the spacing unit during the post-process; dark points of a light can be further improved and great displaying effect of the display panel can be achieved; and display quality of the display panel can be further enhanced.

The invention relates to a surface modified carbon nanotube, the surface of which is grafted with hyperbranched polysiloxane containing a phosphaphenanthrene structure and epoxide groups through chemical bonding. A preparation method for the surface modified carbon nanotube comprises the following steps: mixing prepared hyperbranched polysiloxane containing a phosphaphenanthrene structure and epoxide groups with a functionalized carbon nanotube, adding the catalyst triphenylphosphine, adding an obtained mixture into a solvent, carrying out ultrasonic treatment, and removing the solvent after a reaction is finished so as to obtain the surface modified carbon nanotube. The surface modified carbon nanotube provided in the invention contains active reactive groups, can well disperse in thermosetting resin and endows the thermosetting resin with good flame resistance and toughness on the basis of maintaining heat resistance and rigidity of the thermosetting resin; therefore, the surface modified carbon nanotube has immense application potential in the fields of research and development of novel high-molecular materials, modification, high performance development and multi-functionalization of polymers, etc.

The invention discloses a minimized high-isolation ceramic packaging structure including a pipe case (a), a chip (b), a metal cover plate (c) and a bonding wire (d); the pipe case (a) is composed of a ceramic layer (a1), a metallization layer (a2) and an interconnection blind hole (a3); the metallization layer (a2) is composed of a bonding finger layer (a21), a sealing area (a22), a connection area (a23), a bonding chip area (a24) and a printed circuit board trace layer (a25); the pipe case(a) is provided in the center thereof with the bonding chip area (a24) for displacing the chip, and the circumference of the bonding chip area (a24) is provided with the bonding finger layer (a21) which includes a grounding bonding finger (a211) and a signal bonding finger (a212). The structure herein has the beneficial effects that stratum isolation technology is adopted, and space stereo-wrapping is conducted on the high-isolation bonding finger, and a space "sandwich" structure is formed; the structure can markedly reduce cross talk and coupling effect of the signal channels, reduce signal loss, increase isolation level, and reduce impact of packaging on the electrical property of the products, provided that the high reliability of the packaging is guaranteed by the structure.

The invention provides a resistive non-volatile memory device. The resistive non-volatile memory device includes a bottom electrode contact plug; a bottom electrode disposed on the bottom electrode plug and in contact with the bottom electrode plug; a resistance transition layer disposed on the bottom electrode on top; a top electrode disposed on the above-mentioned resistance transition layer; a top electrode contact plug disposed on the above-mentioned top electrode and in contact with the above-mentioned top electrode, wherein the above-mentioned bottom electrode contact plug and the above-mentioned top electrode contact plug are separated from each other by a distance along a top-view direction. The present invention provides a resistive non-volatile memory device. By disposing the electrode contact plugs, the top electrode contact plugs can be kept away from the part of the MIM stack directly above the bottom electrode contact plugs, so as to reduce the The electrical impact of the component caused by the top surface profile can reduce the variation of the resistive switching resistance of the component.

A flexible acrylic emulsion, which contains monomers with unsaturated bonds, emulsifiers, initiators and water in its formula. In addition to components such as acrylic acid and its esters, methacrylic acid and its esters, and styrene, the monomers also contain Acetoacetate ethyl methacrylate has a content of 1.01-3.03% by weight in the total amount of the emulsion. The present invention uses ethyl methacrylate acetoacetate as the cross-linking agent, because the cross-linking agent generates short-term polarity through the vibration of the dipole moment to produce cross-linking, which is different from other charged ionic cross-linking agents, so the preparation The resulting emulsion has excellent chemical stability and can be polymerized with cement as a waterproof layer and tile putty for buildings with anti-crack and anti-alkali properties. It solves the problem that the current acrylic emulsion will break when it encounters a strong electrolyte and cannot be compatible with cement. Mixed technical issues.

Provided is a display capable of reducing electrical influence of a color filter on a pixel circuit, thereby suppressing deterioration of display quality. The display includes: a pixel driving substrate having a color filter; a display function layer provided on the pixel driving substrate; a first electrode and a second electrode for supplying a driving voltage to the display function layer; to the third electrode of the color filter.

The method includes steps: forming buffer layer on substrate; forming first and second islands of polysilicon on the buffer layer; forming grid insulating layer on the substrate; forming first and second grid electrodes on the grid insulating layer; forming sacrificial layer on the substrate, and forming photoresist layer on the sacrificial layer; using photoresist layer being as mask to remove sacrificial layer above the first island of polysilicon; carrying out first ion implantation procedure in order to form first source electrode / drain electrode inside first island of polysilicon; removing photoresist layer, and then carrying out second ion implantation procedure in order to form second source electrode / drain electrode inside second island of polysilicon; the second ion implantation procedure makes ions implant inside the buffer layer under two sides of second grid electrode; removing the sacrificial layer, and then carrying out ion implantation procedure with shallow doping.

The invention relates to a diode efficient needle transfer mounting process, which comprises the steps of (1) manufacturing upper and lower frames of a patch diode and performing mold clamping, (2) welding, (3) plastic packaging, (4) curing and electroplating, (5) rib cutting, bending and shaping, (6) reflow soldering, and (7) inspection and shipment. In the diode efficient needle transfer mounting process, a matrix frame is adopted, so that the adhering efficiency can be improved, the productivity is increased, and the labor cost is saved. Meanwhile, the needle transfer needle head is changedinto a double-layer steel needle head, crystal particles are not cracked through a spring in the process of pressing the steel needle, influences imposed on the electric property of the diode are reduced, the distance between a steel needle tip to a lower plate surface is adjusted at the same time so as to achieve an appropriate length, thereby being capable of effectively controlling the adhesive amount, improving the utilization rate of raw materials, and reducing the loss. In addition, the size of the steel needle tip can be adjusted so as to improve control for the adhesive amount of solder paste.