37results about How to "Reduce electrical influence" patented technology

The invention relates to a surface modified carbon nanotube, the surface of which is grafted with hyperbranched polysiloxane containing a phosphaphenanthrene structure and epoxide groups through chemical bonding. A preparation method for the surface modified carbon nanotube comprises the following steps: mixing prepared hyperbranched polysiloxane containing a phosphaphenanthrene structure and epoxide groups with a functionalized carbon nanotube, adding the catalyst triphenylphosphine, adding an obtained mixture into a solvent, carrying out ultrasonic treatment, and removing the solvent after a reaction is finished so as to obtain the surface modified carbon nanotube. The surface modified carbon nanotube provided in the invention contains active reactive groups, can well disperse in thermosetting resin and endows the thermosetting resin with good flame resistance and toughness on the basis of maintaining heat resistance and rigidity of the thermosetting resin; therefore, the surface modified carbon nanotube has immense application potential in the fields of research and development of novel high-molecular materials, modification, high performance development and multi-functionalization of polymers, etc.

The invention relates to a TFT-LCD array substrate and a manufacturing method thereof. The array substrate comprises a grid wire, a data wire, a pixel electrode and a thin film transistor. The array substrate is characterized in that the thin film transistor comprises a grid electrode connected with the grid wire and a source electrode connected with the data wire; at least one through hole is formed on the grid electrode or a through groove is formed on at least one side of the grid electrode; and a semiconductor layer which is connected with the pixel electrode and the source electrode respectively is filled in the through hole or the through groove. The array substrate changes a 'planar type' TFT structure which is universally adopted in the prior art, changes the planar structure into a spatial structure, and has the characteristics of simple and compact structure, good parameter property, simple manufacturing process and the like. The array substrate realizes the effect of increasing the starting current and has certain improvement on other electrical parameters, and the spatial structure of the array substrate reduces the planar size and increases the spatial utilization rate so as to increase the opening ratio.

A display capable of reducing an electric effect of a color filter on a pixel circuit, and thereby suppressing degradation in display quality is provided. The display includes a pixel drive substrate having a color filter, a display function layer provided on the pixel drive substrate, a first electrode and a second electrode to supply a drive voltage to the display function layer, and a third electrode disposed to face the color filter.

The invention relates to a method for preparing high-tap-density silver flake. The method comprises the following steps of S1, preparation of a solution, S2, reduction reaction, S3, cleaning and filtering, S4, ball milling of silver powder, S5, drying of the silver powder, and S6, screening and testing of the silver powder. The method is simple in process and good in reproducibility in the preparation process, and industrialized production can be achieved.

The invention relates to a method for manufacturing a solar thin film light transmitting component, belonging to the technical field of photovoltaic application. The manufacturing method adopts the following technical scheme: a front transparent electric conductive electrode, a thin film photoelectric conversion layer and a back electric conductive electrode are deposited on an insulating light transmitting substrate, and a plurality of son batteries are formed by cutting off the three thin films; then mechanical inscribing equipment is used for removing the front transparent electric conductive electrode, the thin film photoelectric conversion layer and the back electric conductive electrode (or the thin film photoelectric conversion layer and the back electric conductive electrode) in a direction parallel to or vertical to the son batteries, a pattern is inscribed by adjusting a needle head the equipment; as the photoelectric conversion layer in the patter is removed, therefore, lights can directly penetrate through the battery, thereby realizing the light transmitting function of the component. The manufacturing method can be used for realizing the preparation of the novel light transmitting component and has the characteristics of low cost, high efficiency, simple operation, short time consumption and the like while the output electrical property and the light transmission performance of the novel light transmitting component are not lower than that of the light transmitting component of the solar thin film battery prepared by the prior art.

The invention discloses a regulating method for distributed MEMS phase shifter working voltage based on phase shift magnitude electromechanical coupling. The regulating method comprises the steps that structural parameters, material properties and electromagnetic working parameters of distributed MEMS phase shifters are determined; a working voltage standard value V<0> and a phase shift magnitude standard value deltaphi<0> are determined; working voltage of 2V<0> is applied, and phase shift magnitude deltaphi in M MEMS bridges is measured; the phase shift magnitude measured value deltaphi and the standard value deltaphi<0> are compared; when the phase shift magnitude measured value deltaphi is greater than the standard value deltaphi<0>, upward height error of the MEMS bridges is obtained, and equivalent circuit parameters and working voltage regulating amount are calculated; when the phase shift magnitude measured value deltaphi is less than or equal to the standard value deltaphi<0>, downward height error or the state of error free of the MEMS bridges is obtained, the equivalent circuit parameters and a height error value are calculated, and the working voltage regulating amount is calculated; whether all the working voltage regulating amount is calculated is judged; the working voltage regulating amount is applied to the corresponding MEMS bridges again, and the overall phase shift magnitude of the distributed MEMS phase shifters is measured; and whether electrical performance of the distributed MEMS phase shifters after working voltage regulation can meet the indicator requirements is judged. Theoretical guidance is provided for reliability of practical work.