resistive non-volatile memory device

A non-volatile, resistive technology, applied in the direction of electrical components, information storage, static memory, etc., can solve the problems affecting the resistance conversion resistance characteristics of resistive non-volatile memory, so as to reduce the variation of resistance conversion resistance, The effect of reducing the electrical influence of components

Active Publication Date: 2016-12-28
WINBOND ELECTRONICS CORP
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Problems solved by technology

In addition, the flatness of the surface profile of the bottom electrode will also affect the resistance switching resistance characteristics of the resistive non-volatile memory.

Method used

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Embodiment Construction

[0034] In order to make the purpose, features, and advantages of the present invention more comprehensible, preferred embodiments are specifically cited below, together with accompanying drawings, for a detailed description. The description of the present invention provides different examples to illustrate the technical features of different implementations of the present invention. Wherein, the configuration of each element in the embodiment is for illustration, not for limiting the present invention. In addition, part of the symbols in the figures in the embodiments are repeated for the purpose of simplifying the description, and do not imply the relationship between different embodiments.

[0035] An embodiment of the present invention provides a non-volatile memory, such as a resistive non-volatile memory (RRAM) device, which makes the top electrode contact plug connected to the top electrode and the bottom electrode contact plug connected to the bottom electrode transvers...

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Abstract

The invention provides a resistive non-volatile memory device. The resistive non-volatile memory device includes a bottom electrode contact plug; a bottom electrode disposed on the bottom electrode plug and in contact with the bottom electrode plug; a resistance transition layer disposed on the bottom electrode on top; a top electrode disposed on the above-mentioned resistance transition layer; a top electrode contact plug disposed on the above-mentioned top electrode and in contact with the above-mentioned top electrode, wherein the above-mentioned bottom electrode contact plug and the above-mentioned top electrode contact plug are separated from each other by a distance along a top-view direction. The present invention provides a resistive non-volatile memory device. By disposing the electrode contact plugs, the top electrode contact plugs can be kept away from the part of the MIM stack directly above the bottom electrode contact plugs, so as to reduce the The electrical impact of the component caused by the top surface profile can reduce the variation of the resistive switching resistance of the component.

Description

technical field [0001] The invention relates to a resistive non-volatile memory device, in particular to a resistive non-volatile memory device with low variation of resistance switching resistance. Background technique [0002] Resistive non-volatile memory (RRAM) has low power consumption, low operating voltage, short write and erase time, long endurance, long memory time, non-destructive read, multi-state storage, simple component manufacturing process and can be scaled It has advantages such as high performance, so it has become the mainstream of emerging non-volatile memory. The basic structure of a common resistive non-volatile memory is a metal-insulator-metal (MIM) laminated structure composed of a bottom electrode, a resistive transition layer and a top electrode, and the resistive non-volatile memory The resistance switching (resistive switching, RS) resistance characteristic is an important characteristic of the element. However, it is very difficult to control ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C13/00
Inventor 张文岳
Owner WINBOND ELECTRONICS CORP
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