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Pixel structure based on oxide thin film transistor, detector and production method thereof

A technology of oxide film and pixel structure, which is applied in the field of X-ray sensors, can solve problems such as performance degradation, achieve low leakage current, reduce electrical influence, and improve the effect of influence

Pending Publication Date: 2021-04-20
SHANGHAI IRAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a pixel structure based on an oxide thin film transistor, an X-ray detector and its preparation method, which are used to solve other processes in the preparation of detectors in the prior art, such as Hydrogen atoms, etc. have an impact on the formed TFT device, resulting in performance degradation and other issues

Method used

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  • Pixel structure based on oxide thin film transistor, detector and production method thereof
  • Pixel structure based on oxide thin film transistor, detector and production method thereof
  • Pixel structure based on oxide thin film transistor, detector and production method thereof

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Embodiment 1

[0061] Such as Figure 15-17 shown, see Figure 1-15 , in order to achieve the above purpose and other related purposes, the present invention provides a pixel structure based on an oxide thin film transistor, and a new type of pixel structure based on an oxide thin film transistor can be effectively protected by introducing an auxiliary protection structure. The device is beneficial to reduce the leakage current of degraded thin film transistors such as photoelectric sensor film formation and high temperature process, thereby reducing the impact of subsequent manufacturing processes on the electrical properties of thin film transistors, and can effectively improve the hydrogen atoms in the preparation of visible light sensors. Impact, improve the process compatibility of oxide thin film transistors and photosensors, realize low leakage current of oxide thin film transistors and device electrical uniformity, thereby expanding the process window of the panel and improving the r...

Embodiment 2

[0111] Such as Figure 18 As shown, the present invention also provides an X-ray detector, including the pixel structure described in any one of the solutions in Embodiment 1, such as Figure 18 The pixel structure 202 in , wherein the pixel structure 202 constitutes the sensor array 201 of the X-ray detector, that is, a plurality of pixel units arranged two-dimensionally on the substrate constitutes the sensor array. In addition, the X-ray detector further includes at least a scintillator layer 203 and an encapsulation film layer 204 disposed above the sensor array 201 , and of course, may also include a lower encapsulation film layer 205 formed below the sensor array 201 .

[0112] Wherein, the packaging film layer 204 can be a reflective film / light-absorbing film / protective packaging film; the lower packaging film layer 205 can be a reflective film / light-absorbing film / protective packaging film; the detector substrate 200 on the lower surface of the sensor array 201 is the ...

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Abstract

The invention provides a pixel structure based on an oxide thin film transistor, an X-ray detector and a production method thereof. The pixel structure comprises a substrate, an oxide thin film transistor, a visible light sensor and an auxiliary protection structure. The auxiliary protection structure is arranged above the oxide thin film transistor, is separated from the oxide thin film transistor through an isolation layer, and at least covers the edge of the active layer. A novel pixel structure is designed by introducing the auxiliary protection structure, a thin film transistor device can be effectively protected, a leakage current of a deteriorated thin film transistor in a photoelectric sensor film forming and high-temperature manufacturing process and the like is reduced, and the influence of the subsequent manufacturing process on the electrical property of the thin film transistor is reduced; and the influence of hydrogen atoms on the oxide thin film transistor in production of the visible light sensor can be effectively improved, a low leakage current and device electrical uniformity of the oxide thin film transistor are realized, a process window of a panel is expanded, and the working reliability of the sensor is improved.

Description

technical field [0001] The invention belongs to the technical field of X-ray sensors, and in particular relates to a pixel structure based on an oxide thin film transistor, an X-ray detector and a preparation method thereof. Background technique [0002] Flat-panel digital X-ray detectors are usually used in medical radiation imaging, industrial inspection, security inspection and other fields. The current flat-panel digital X-ray detectors, especially large-scale image sensors, usually have an area of ​​tens of centimeters and millions to tens of millions of pixels. Flat panel detection technology can be divided into two categories: direct and indirect. The direct type is to directly convert X-rays into electrons to form signals; the indirect type is to convert X-rays into visible light, and then convert visible light into electrons to form signals. The indirect X-ray sensor includes: a scintillator on the upper layer, which converts the incident X-rays into visible light...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 李桂锋金利波
Owner SHANGHAI IRAY TECH
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