Pixel structure based on oxide thin film transistor, detector and production method thereof

A technology of oxide film and pixel structure, which is applied in the field of X-ray sensors, can solve problems such as performance degradation, achieve low leakage current, reduce electrical influence, and improve the effect of influence

Pending Publication Date: 2021-04-20
SHANGHAI IRAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a pixel structure based on an oxide thin film transistor, an X-ray detector and its preparation met

Method used

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  • Pixel structure based on oxide thin film transistor, detector and production method thereof
  • Pixel structure based on oxide thin film transistor, detector and production method thereof
  • Pixel structure based on oxide thin film transistor, detector and production method thereof

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Example Embodiment

[0060]Example 1:

[0061]Such asFigure 15-17 Disted, seeFigure 1-15 In order to achieve the above objects and other related objects, the present invention provides a pixel structure based on an oxide thin film transistor, and is designed to design a new type of oxide-based thin film transistor, which can effectively protect the formed thin film transistor by introducing an auxiliary protective structure. The device is conducive to reducing the problem of deteriorating the leakage current of the photoelectric sensor film formation and the high temperature process, thereby reducing the influence of subsequent process on thin film transistor electrical properties, and can effectively improve the visible light sensor prepared for the hydrogen atom to the oxide-based thin film transistor Influence the process compatibility of the oxide thin film transistor and photoelectric sensor, realize the low leakage current and device electrical uniformity of the oxide thin film transistor, thereby en...

Example Embodiment

[0110]Example 2:

[0111]Such asFigure 18 As shown, the present invention also provides an X-ray detector, including any one of any of the embodiments, such asFigure 18 The pixel structure 202, wherein the pixel structure 202 constitutes a sensor array 201 of the X-ray detector, i.e., a plurality of pixel units arranged in a substrate constitute a sensor array. Additionally, the X-ray detector further includes a scintillator layer 203 and a package film layer 204 disposed above the sensor array 201, and of course, it is also possible to include a lower sealing film layer 205 formed below the sensor array 201.

[0112]Wherein, the encapsulating film layer 204 may be a reflective film / absorbing film / protective encapsulating film; the lower sealing film layer 205 may be a reflective film / absorbing film / protective encapsulating film; the detector substrate 200 in the lower surface of the sensor array 201 is in the first embodiment The substrate.

[0113]Further, the present invention als...

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Abstract

The invention provides a pixel structure based on an oxide thin film transistor, an X-ray detector and a production method thereof. The pixel structure comprises a substrate, an oxide thin film transistor, a visible light sensor and an auxiliary protection structure. The auxiliary protection structure is arranged above the oxide thin film transistor, is separated from the oxide thin film transistor through an isolation layer, and at least covers the edge of the active layer. A novel pixel structure is designed by introducing the auxiliary protection structure, a thin film transistor device can be effectively protected, a leakage current of a deteriorated thin film transistor in a photoelectric sensor film forming and high-temperature manufacturing process and the like is reduced, and the influence of the subsequent manufacturing process on the electrical property of the thin film transistor is reduced; and the influence of hydrogen atoms on the oxide thin film transistor in production of the visible light sensor can be effectively improved, a low leakage current and device electrical uniformity of the oxide thin film transistor are realized, a process window of a panel is expanded, and the working reliability of the sensor is improved.

Description

technical field [0001] The invention belongs to the technical field of X-ray sensors, and in particular relates to a pixel structure based on an oxide thin film transistor, an X-ray detector and a preparation method thereof. Background technique [0002] Flat-panel digital X-ray detectors are usually used in medical radiation imaging, industrial inspection, security inspection and other fields. The current flat-panel digital X-ray detectors, especially large-scale image sensors, usually have an area of ​​tens of centimeters and millions to tens of millions of pixels. Flat panel detection technology can be divided into two categories: direct and indirect. The direct type is to directly convert X-rays into electrons to form signals; the indirect type is to convert X-rays into visible light, and then convert visible light into electrons to form signals. The indirect X-ray sensor includes: a scintillator on the upper layer, which converts the incident X-rays into visible light...

Claims

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Application Information

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IPC IPC(8): H01L27/146
Inventor 李桂锋金利波
Owner SHANGHAI IRAY TECH
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