Method for manufacturing metal oxide semiconductor field effect transistor and device thereof

Abstract

The invention discloses a method for manufacturing a metal oxide semiconductor field effect transistor and a device thereof. The manufacturing method comprises the following steps: providing a semiconductor substrate; forming an insulating layer on the surface of the semiconductor substrate; forming a groove on the insulating layer; forming light dope drain regions in the semiconductor substrate below the lateral wall of the groove respectively; forming grid flank walls on the lateral wall of the groove respectively; forming grid dielectric layers on the groove surfaces between the grid flank walls; forming grids in an accommodating space encircled by the grid flank walls and the grid dielectric layers; removing the insulating layer; and forming a source region and a drain region respectively in the semiconductor substrates on two sides of the grid flank walls. The manufacturing method breaks through the limitation of the minimum grid length which can be achieved by a photoetching device, and reduces the length of a channel formed between the source region and the drain region; and the device formed according to the method is helpful for enhancing the firing current and reducing the electric leakage caused by short-channel effect.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method and its device, in particular to a metal oxide semiconductor field effect transistor manufacturing method and its device. Background technique [0002] With the advancement of semiconductor technology, semiconductor devices with lower cost, lower power consumption and faster speed have become one of the goals generally pursued by the semiconductor and electronics industries. In order to achieve the above goals, increase the integration level, reduce the unit area, and manufacture more transistors in the same chip area, the size of semiconductor devices needs to continue to shrink with the development of technology, and the gate length becomes shorter. In order to obtain a shorter gate length, the usual method is to upgrade the lithography equipment. At present, lithography machines have become the most expensive equipment in semiconductor manufacturing, and the price of a 193nm lithography ...

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Upgrading lithography equipment requires huge investment

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