Thin film transistor device and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
- Publication Date
- 2019-08-30
- Estimated Expiration
- Not applicable ยท inactive patent
Smart Images
Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The invention relates to the field of displays, in particular to a thin film transistor device and a preparation method thereof. Background technique
[0002] Since a TFT (Thin Film Transistor, thin film transistor) with a top-gate structure has lower parasitic capacitance and better electrical characteristics, it is widely used in display devices.
[0003] In the prior art, when fabricating a thin film transistor device TFT with a top-gate structure, since a self-alignment process between the gate Gate and the gate insulation pattern GI is used, the gate Gate is usually produced by a wet etching process, and the gate gate The insulating pattern GI is produced by a dry etching process. When the gate Gate is etched by a wet etching process, the etchant will etch a small distance under the photoresist, which causes the gate Gate The pole insulation pattern GI is short by a small distance, that is, the orthographic projections of the gate Gate and the ga...