Thin film transistor device and preparation method thereof

A thin-film transistor and device technology, applied in the field of thin-film transistor devices and their preparation, can solve problems such as unregulated, poor display effect of display devices, and poor electrical characteristics of thin-film transistor devices, so as to increase the turn-on current and improve the display effect , Enhance the effect of electrical characteristics

CN110190132AInactive Publication Date: 2019-08-30SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2019-08-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a thin film transistor device and a preparation method thereof. The thin film transistor device comprises a substrate, an active layer, a gate insulating layer, a conductive layer and a gate layer. The preparation method of the thin film transistor includes a shading layer preparation step, a buffer layer preparation step, an active layer preparation step and a gate layer preparation step. The technical effects of the invention lie in that the conductive layer exists at all positions on the upper surface of the gate insulating layer, the corresponding active layer belowthe whole gate insulating layer is enabled to be controlled, the turn-on current of the thin film transistor device is increased, the electrical characteristics of the thin film transistor device areenhanced, and the display effect of the display device is improved.
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Description

technical field

[0001] The invention relates to the field of displays, in particular to a thin film transistor device and a preparation method thereof. Background technique

[0002] Since a TFT (Thin Film Transistor, thin film transistor) with a top-gate structure has lower parasitic capacitance and better electrical characteristics, it is widely used in display devices.

[0003] In the prior art, when fabricating a thin film transistor device TFT with a top-gate structure, since a self-alignment process between the gate Gate and the gate insulation pattern GI is used, the gate Gate is usually produced by a wet etching process, and the gate gate The insulating pattern GI is produced by a dry etching process. When the gate Gate is etched by a wet etching process, the etchant will etch a small distance under the photoresist, which causes the gate Gate The pole insulation pattern GI is short by a small distance, that is, the orthographic projections of the gate Gate and the ga...

Examples

Embodiment Construction

[0029] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, to fully introduce the technical content of the present invention to those skilled in the art, to prove that the present invention can be implemented, to make the technical content disclosed in the present invention clearer, and to make the technical content of the present invention clearer. It is easier for those skilled in the art to understand how to implement the present invention. However, the present invention can be realized through many different forms of embodiments, and the scope of protection of the present invention is not limited to the embodiments mentioned herein, and the descriptions of the following embodiments are not intended to limit the scope of the present invention.

[0030] The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc...