Photomask, thin film transistor element and manufacturing method of thin film transistor element

A technology of thin-film transistors and photomasks, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of decreased aperture ratio, difficulties, and increased resistance and capacitance loads, and achieve the effect of high turn-on current
CN101598894BActive Publication Date: 2011-07-27AU OPTRONICS CORP

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
AU OPTRONICS CORP
Publication Date
2011-07-27

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Abstract

The invention provides a photomask, a thin film transistor element and a manufacturing method of the thin film transistor element. The photomask comprises a first shading pattern, a second shading pattern, a translucent single slit and a semi-translucent pattern, wherein the translucent single slit is positioned between the first shading pattern and the second shading pattern; the width of the translucent single slit is between 1.5 and 2.5 microns; and the semi-translucent pattern is connected with the first shading pattern and the second shading pattern. The photomask adopts a design of the translucent single slit and the semi-translucent pattern, wherein the translucent single slit can reduce the channel length making the thin film transistor element; and the semi-translucent pattern can define an extension part of a semiconductor layer. Therefore, the thin film transistor element has a higher starting current.
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Description

technical field

[0001] The invention relates to a thin film transistor element, a photomask used to define a thin film transistor element and a manufacturing method of a thin film transistor element, especially a photomask capable of increasing the channel length limit of a thin film transistor element, a short Channel-length thin film transistor elements and methods of making the same. Background technique

[0002] In a thin film transistor liquid crystal display panel (thin film transistor liquid crystal display panel, TFT-LCD panel), the thin film transistor element is used as a switch element for controlling each pixel electrode. When the size and resolution of the liquid crystal display panel increase, the size of the pixel electrode will also increase accordingly. Therefore, the thin film transistor must provide a larger turn-on current (Ion) to improve the charging capability. As is well known to those skilled in the art, the turn-on current is proportional to the ch...

Claims

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