Photomask, thin film transistor element and manufacturing method of thin film transistor element

A technology of thin-film transistors and photomasks, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of decreased aperture ratio, difficulties, and increased resistance and capacitance loads, and achieve the effect of high turn-on current

Active Publication Date: 2011-07-27
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The general way to increase the turn-on current is to increase the channel width of the thin film transistor element. However, increasing the channel width of the thin film transistor element has the disadvantages of decreasing the aperture ratio and increasing the resistance and capacitance load.
On the other hand, reducing the channel length of thin film transistors can also increase the turn-on current, but this method is limited by the limits of the current photomask and photolithography process, and there are considerable difficulties

Method used

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  • Photomask, thin film transistor element and manufacturing method of thin film transistor element
  • Photomask, thin film transistor element and manufacturing method of thin film transistor element
  • Photomask, thin film transistor element and manufacturing method of thin film transistor element

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Embodiment Construction

[0027] In order for those skilled in the art to have a better understanding of the present invention, several preferred embodiments of the present invention are listed below, together with the accompanying drawings, to describe in detail the composition and desired effects of the present invention.

[0028] Please refer to figure 1 . figure 1 A schematic diagram of a photomask according to a preferred embodiment of the present invention is shown. In this embodiment, the photomask 10 may be a graytone mask (GTM), a halftone mask (HTM) or other photomasks that have different transmittances in different regions. . The photomask 10 of this embodiment includes a first light-shielding pattern 12 , a second light-shielding pattern 14 , a single light-transmitting slit 16 and a semi-transparent pattern 18 . The first light-shielding pattern 12 includes a first side 121 and a second side 122, the second light-shielding pattern 14 includes a third side 143 and a fourth side 144, and ...

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Abstract

The invention provides a photomask, a thin film transistor element and a manufacturing method of the thin film transistor element. The photomask comprises a first shading pattern, a second shading pattern, a translucent single slit and a semi-translucent pattern, wherein the translucent single slit is positioned between the first shading pattern and the second shading pattern; the width of the translucent single slit is between 1.5 and 2.5 microns; and the semi-translucent pattern is connected with the first shading pattern and the second shading pattern. The photomask adopts a design of the translucent single slit and the semi-translucent pattern, wherein the translucent single slit can reduce the channel length making the thin film transistor element; and the semi-translucent pattern can define an extension part of a semiconductor layer. Therefore, the thin film transistor element has a higher starting current.

Description

technical field [0001] The invention relates to a thin film transistor element, a photomask used to define a thin film transistor element and a manufacturing method of a thin film transistor element, especially a photomask capable of increasing the channel length limit of a thin film transistor element, a short Channel-length thin film transistor elements and methods of making the same. Background technique [0002] In a thin film transistor liquid crystal display panel (thin film transistor liquid crystal display panel, TFT-LCD panel), the thin film transistor element is used as a switch element for controlling each pixel electrode. When the size and resolution of the liquid crystal display panel increase, the size of the pixel electrode will also increase accordingly. Therefore, the thin film transistor must provide a larger turn-on current (Ion) to improve the charging capability. As is well known to those skilled in the art, the turn-on current is proportional to the ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/14H01L29/786H01L21/336G03F1/54
Inventor 张家铭萧祥志
Owner AU OPTRONICS CORP
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