Photomask, thin film transistor element and manufacturing method of thin film transistor element
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- AU OPTRONICS CORP
- Publication Date
- 2011-07-27
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to a thin film transistor element, a photomask used to define a thin film transistor element and a manufacturing method of a thin film transistor element, especially a photomask capable of increasing the channel length limit of a thin film transistor element, a short Channel-length thin film transistor elements and methods of making the same. Background technique
[0002] In a thin film transistor liquid crystal display panel (thin film transistor liquid crystal display panel, TFT-LCD panel), the thin film transistor element is used as a switch element for controlling each pixel electrode. When the size and resolution of the liquid crystal display panel increase, the size of the pixel electrode will also increase accordingly. Therefore, the thin film transistor must provide a larger turn-on current (Ion) to improve the charging capability. As is well known to those skilled in the art, the turn-on current is proportional to the ch...