31results about How to "Achieving bi-directional switching characteristics" patented technology

The invention relates to a dual-conductive type discrete dual-rectangular grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The transistor has a functionthat a P conductive type and an N conductive type can be freely switched and a bidirectional switch function, has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude and has the characteristics of a dual-rectangular grid discrete control structure. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent sub-threshold characteristic and switch characteristic are achieved by a Schottky barrier tunneling effect, and the static power consumption of the transistor is reduced; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and whichcannot be achieved by various existing transistor technologies are achieved, thus, a wider and versatile logic function is provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.

The invention relates to a rectangular grid-control U-shaped channel bilateral switch tunneling transistor and a manufacturing method thereof. The device is provided with a rectangular grid and a symmetrical structural feature and has relatively high grid control capacity, and a heavily-doped source drain interchangeable region of second type of impurities can be controlled as a source region or adrain region by adjusting source drain interchangeable electrode voltage, so that the tunneling current direction is changed. The transistor has the advantages of low static power consumption, reverse leakage current, relatively high grid control capacity, low subthreshold amplitude and achievement of bilateral switch function. Compared with an ordinary MOSFETs type device, a preferable switchingcharacteristic is realized by using a tunneling effect; and compared with an ordinary tunneling filed effect transistor, the transistor has a source drain interchangeable bidirectionally symmetricalswitching characteristic that the ordinary tunneling filed effect transistor does not own, so that the transistor is applicable for popularization and application.

The invention relates to a bracket-shaped grid-control source drain resistive two-way switch transistor and a manufacturing method thereof. According to the bracket-shaped grid-control source drain resistive two-way switch transistor, a device is structurally characterized by comprising bracket grids symmetrical left and right and has strong grid control capability and can control a metal source and drain interchangeable area as a source area or a drain area by adjusting a source and drain interchangeable electrode voltage to change the tunneling current direction. The bracket-shaped grid-control source drain resistive two-way switch transistor has the advantages of being low in static power and reverse leakage current, high in grid control capacity, low in subthreshold value swing and capable of achieving the two-way switching function. Compared with an ordinary MOSFETs type device, the tunneling effect is used for achieving a more excellent switching characteristic. Compared with anordinary tunneling field effect transistor, the bracket-shaped grid-control source drain resistive two-way switch transistor has the interchangeable source and drain two-way symmetrical switching characteristic with which the ordinary tunneling field effect transistor lacks, and therefore the bracket-shaped grid-control source drain resistive two-way switch transistor is suitable for application and popularization.

The invention relates to a source-drain resistive random bidirectional switching field effect transistor and a manufacturing method thereof. The device has the structural characteristic of bilateral symmetry, and a metal source-drain interchangeable region is controlled to act as a source region or a drain region by adjusting the source-drain interchangeable electrode voltage so as to change the direction of schottky barrier tunneling current. The device has the advantages of low static power consumption reverse leakage current and low sub-threshold swing and can realize the bidirectional switching function. Compared with the common MOSFETs type device, the intensity of the schottky barrier tunneling effect is controlled by using the gate electrode to change the resistance value of the source region and the drain region so as to realize the better switching characteristic; compared with the tunneling field effect transistor, the bidirectional switching field effect transistor has the source-drain interchangeable bidirectional symmetrical switching characteristic which is not possessed by the common tunneling field effect transistor and higher forward conduction characteristic; andcompared with the common schottky barrier transistor, the bidirectional switching field effect transistor has the advantages of high technology implementation and better reverse switching characteristic so as to be suitable for popularization and application.

The invention relates to a double-selection conductive type dual-bracket grid-controlled source-drain variable resistance transistor and a manufacturing method thereof. The device has structural characteristics of folded auxiliary grid, dual-bracket grid and a left side and a right side which are symmetric to each other, the function that a P conductive type and an N conductive type can be freelyswitched can be achieved, and the transistor has the advantages of low static power consumption, low reverse leakage current, relatively high grid control capability and low sub-threshold amplitude. Compared with a conventional MOSFETs device, the transistor has the advantages that more excellent switch characteristic is achieved by a tunneling effect; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain can be symmetric to each other and can be exchanged and which is not possessed by the conventional tunneling field-effect transistor, the function that the P conductive type and the N conductive type can be freely switched and that cannot be achieved by the prior art is achieved, thus, wider and more versatile logic functions are provided for an integrated circuit design unit, and the transistor is suitable for promotion and application.

The invention relates to a source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor and a manufacturing method thereof. The source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor is provided with a folding auxiliary grid, a double-bracket grid and structural features which are symmetric on the left side andthe right side. The source-drain symmetric and interchangeable double-bracket-shaped gate-controlled tunneling transistor is strong in grid control capability, and a voltage-controlled heavily-dopedsource-drain interchangeable region of a source-drain interchangeable electrode can be adjusted to be a source region or a drain region. In this way, the direction of the tunneling current is changed.According to the invention, the advantages of bidirectional switch function, low static power consumption, low reverse leakage current, relatively strong grid control capability, low sub-threshold amplitude swing and the like are realized. Compared with a common MOSFET type device, more excellent switching characteristics are achieved through the tunneling effect. Compared with a common tunnelingfield effect transistor, source-drain symmetric and interchangeable two-way switch characteristics, which cannot be realized by the common tunneling field effect transistor, can be realized by the source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor. Therefore, the source-drain symmetric and interchangeable double-bracket-shaped grid-controlled tunneling transistor is suitable for popularization and application.

The invention relates to a bidirectional tunneling field-effect transistor with symmetric and replaceable source and drain and a manufacturing method of the bidirectional tunneling field-effect transistor. The device has horizontal symmetric structure characteristic, a second-type impurity heavy-doping source-drain replaceable region is controlled as a source region or a drain region by adjustingreplaceable electrode voltages of the source and the drain, and a tunneling current direction is changed. The bidirectional tunneling field-effect transistor has the advantages of low static power consumption, high forward-reverse current ratio, low reverse leakage current characteristic and low sub-threshold amplitude, and the bidirectional switching function can be achieved; compared with a conventional MOSFETs device, the bidirectional tunneling field-effect transistor has the advantages that more excellent switch characteristic is achieved by a tunneling effect; and compared with a conventional tunneling field-effect transistor, the bidirectional tunneling field-effect transistor has bidirectional and symmetric switch characteristic that the source and the drain can be replaced with each other and is not possessed by the conventional tunneling field-effect transistor, and thus, the bidirectional tunneling field-effect transistor is suitable for promotion and application.

The invention relates to a barrier control type H-shaped grid-controlled two-way tunneling transistor and a manufacturing method thereof. The barrier control type H-shaped grid-controlled two-way tunneling transistor provided by the invention comprises an H-shaped grid electrode, a barrier adjusting grid and a bilaterally symmetric structure. The tunneling transistor is strong in grid control capability and a metal source/drain interchangeable region can be controlled as a source region or a drain region through adjusting the electrode voltage of the source/drain interchangeable region. In this way, the direction of the tunneling current is changed. The invention has the advantages of low static power consumption, reverse leakage current, strong grid control capability, low sub-threshold swing and bidirectional switching function. Compared with a common MOSFET type device, more excellent switching characteristics are achieved through the tunneling effect. Compared with a common tunneling field effect transistor, source/drain interchangeable bidirectional symmetrical switching characteristics, which cannot be realized by the common tunneling field effect transistor, can be realizedby the above tunneling transistor. Therefore, the tunneling transistor is suitable for popularization and application.

The invention relates to an H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor and a manufacturing method thereof. The transistor comprises an H-shaped gate electrode, a conductivity type regulation and control gate and a left-right symmetric structure characteristic. According to the invention, the free switching function between a P type conductivity type and an N type conductivity type, and the bidirectional switching function are realized. The advantages of low static power consumption, low reverse leakage current, strong gate control capability and low subthreshold swing are realized. Compared with a common MOSFET type device, the schottky barrier tunneling effect is utilized to achieve better subthreshold characteristics and switching characteristics. The static power consumption of the transistor is reduced. Compared with a common tunneling field effect transistor, the bidirectional switching characteristics, wherein a drain electrode and a source electrode are symmetrical and interchangeable, can be realized, wherein the bidirectional switching characteristics cannot be realized by the common tunneling field effect transistor.The free regulation and control function of the P type conductivity type and the N type conductivity type, which cannot be realized by various existing transistor technologies, can be realized. Therefore, the H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor is suitable for popularization and application.