31results about How to "Achieving bi-directional switching characteristics" patented technology

The invention relates to a source-drain resistive random bidirectional switching field effect transistor and a manufacturing method thereof. The device has the structural characteristic of bilateral symmetry, and a metal source-drain interchangeable region is controlled to act as a source region or a drain region by adjusting the source-drain interchangeable electrode voltage so as to change the direction of schottky barrier tunneling current. The device has the advantages of low static power consumption reverse leakage current and low sub-threshold swing and can realize the bidirectional switching function. Compared with the common MOSFETs type device, the intensity of the schottky barrier tunneling effect is controlled by using the gate electrode to change the resistance value of the source region and the drain region so as to realize the better switching characteristic; compared with the tunneling field effect transistor, the bidirectional switching field effect transistor has the source-drain interchangeable bidirectional symmetrical switching characteristic which is not possessed by the common tunneling field effect transistor and higher forward conduction characteristic; andcompared with the common schottky barrier transistor, the bidirectional switching field effect transistor has the advantages of high technology implementation and better reverse switching characteristic so as to be suitable for popularization and application.

The invention relates to a double-bracket-shaped gate-controlled bidirectional switching tunneling transistor and a manufacturing method thereof. The transistor has a bracket gate and a left-right symmetric structural feature; the gate control capability is high; and a second type of impurity-heavily-doped source-drain exchangeable region is controlled to be as a source region or a drain region byadjusting a source-drain exchangeable electrode voltage and the tunneling current direction is changed. The transistor has advantages of low static power consumption, reverse leakage current, high gate control capability, low sub-threshold swing, and bi-directional switching. Compared with the ordinary MOSFETs type device, the transistor has the improved switching characteristic by using the tunneling effect; and compared with the common tunneling field-effect transistor, the transistor has the good bidirectional symmetric switching characteristic with the source / drain exchanging, wherein thecommon tunneling field-effect transistor does not have the characteristic. Therefore, the bidirectional switching tunneling transistor is suitable for promotion widely.

The invention relates to a source drain variable-resistance rectangular grid controlled U-shaped channel bidirectional transistor and a production method thereof. The element is provided with a rectangular grid electrode, has a transversely symmetrical structural feature, has high grid control capacity and can control a metal source drain interchangeable region as a source region or a drain regionthrough adjustment of source drain interchangeable electrode voltage, and the direction of a tunneling current is changed. The element has the advantages of low static power consumption, small reverse leakage current, high grid control capacity, low subthreshold swing and realization of a bidirectional switch function. Compared with a common MOSFETs-type element, a better switch characteristic isachieved by means of a tunneling effect; compared with a common tunneling field effect transistor, the bidirectional transistor has a source drain interchangeable bidirectional symmetrical switch characteristic; compared with a Schottky barrier transistor, the bidirectional transistor has a better switch characteristic; it is unnecessary to conduct blending in the source and drain regions, a Schottky barrier is easy to form, the rectangular grid electrode can better control the source and drain regions, and thus the bidirectional transistor is suitable for application and popularization.