Discrete double rectangular gate controlled u-shaped channel source-drain double tunneling transistor and manufacturing method thereof

Abstract

The invention relates to a discrete double-rectangle gate-controlled U-shaped channel source-drain double tunnelling transistor and a manufacturing method thereof. The transistor has the rectangular gate electrode structure characteristic capable of making two sides of a source and a drain of the transistor generate the tunnelling effect at the same time and the bilaterally symmetric structure characteristic capable of achieving source-drain interchangeable two-way conduction, and a rectangular gate electrode forms three-side wrapping on vertical parts at two sides of a monocrystalline siliconfilm, so that the transistor provided by the invention has relatively high gate-controlled ability, can achieve the low subthreshold swing characteristic, and has the barrier control gate structure characteristic capable of preventing a majority carrier of a source-drain doped region from flowing through the transistor. Compared with ordinary MOSFETs, the discrete double-rectangle gate-controlledU-shaped channel source-drain double tunnelling transistor has the advantage that more excellent switching characteristic is achieved by using the tunnelling effect; and compared with an ordinary tunnelling field effect transistor, the discrete double-rectangle gate-controlled U-shaped channel source-drain double tunnelling transistor has the source-drain symmetric interchangeable two-way switching characteristic that the ordinary tunnelling field effect transistor does not have, therefore, the discrete double-rectangle gate-controlled U-shaped channel source-drain double tunnelling transistor is suitable for promotion and application.

Description

Technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a discrete dual rectangular gate-controlled U-shaped channel source-drain dual tunneling transistor with low leakage current suitable for manufacturing low-power integrated circuits and a manufacturing method thereof. Background technique [0002] In accordance with the requirements of Moore's Law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also all kinds of adverse effects will become more prominent. Nowadays, MOSFETs used in integrated circuit design are limited by the physical mechanism of their own current generation during operation, and their sub-threshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semicond...

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Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable source and drain of MOSFETs type devices and the low subthreshold swing swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type devices cannot be reduced and ordinary tunneling field effect transistors It can only be used as a one-way switch, and the present invention proposes a discrete double rectangular gate-controlled U-shaped channel source-drain double tunneling transistor and its manufacturing method

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