Source-drain resistance variable rectangular gate-controlled u-shaped channel bidirectional transistor and manufacturing method thereof

Abstract

The invention relates to a source drain variable-resistance rectangular grid controlled U-shaped channel bidirectional transistor and a production method thereof. The element is provided with a rectangular grid electrode, has a transversely symmetrical structural feature, has high grid control capacity and can control a metal source drain interchangeable region as a source region or a drain regionthrough adjustment of source drain interchangeable electrode voltage, and the direction of a tunneling current is changed. The element has the advantages of low static power consumption, small reverse leakage current, high grid control capacity, low subthreshold swing and realization of a bidirectional switch function. Compared with a common MOSFETs-type element, a better switch characteristic isachieved by means of a tunneling effect; compared with a common tunneling field effect transistor, the bidirectional transistor has a source drain interchangeable bidirectional symmetrical switch characteristic; compared with a Schottky barrier transistor, the bidirectional transistor has a better switch characteristic; it is unnecessary to conduct blending in the source and drain regions, a Schottky barrier is easy to form, the rectangular grid electrode can better control the source and drain regions, and thus the bidirectional transistor is suitable for application and popularization.

Description

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a source-drain resistance variable rectangular gate-controlled U-shaped channel bidirectional transistor with low leakage current and a manufacturing method thereof, which are suitable for manufacturing low-power integrated circuits. Background technique

[0002] According to the requirements of Moore's law, MOSFETs, the basic unit of integrated circuits, must become smaller and smaller in size. The resulting problem is not only the increase in the difficulty of the manufacturing process, but also the adverse effects of the device itself caused by the smaller size. highlight. Due to the limitation of the physical mechanism of current generation of MOSFETs used in integrated circuit design, the subthreshold swing cannot be lower than 60mV / dec.

[0003] When ordinary tunneling field effect transistors are used as switching devices, the tunneling me...

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