Source-drain symmetrical interchangeable bidirectional tunneling field effect transistor and manufacturing method thereof

Abstract

The invention relates to a bidirectional tunneling field-effect transistor with symmetric and replaceable source and drain and a manufacturing method of the bidirectional tunneling field-effect transistor. The device has horizontal symmetric structure characteristic, a second-type impurity heavy-doping source-drain replaceable region is controlled as a source region or a drain region by adjustingreplaceable electrode voltages of the source and the drain, and a tunneling current direction is changed. The bidirectional tunneling field-effect transistor has the advantages of low static power consumption, high forward-reverse current ratio, low reverse leakage current characteristic and low sub-threshold amplitude, and the bidirectional switching function can be achieved; compared with a conventional MOSFETs device, the bidirectional tunneling field-effect transistor has the advantages that more excellent switch characteristic is achieved by a tunneling effect; and compared with a conventional tunneling field-effect transistor, the bidirectional tunneling field-effect transistor has bidirectional and symmetric switch characteristic that the source and the drain can be replaced with each other and is not possessed by the conventional tunneling field-effect transistor, and thus, the bidirectional tunneling field-effect transistor is suitable for promotion and application.

Description

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a source-drain symmetrical interchangeable bidirectional tunneling field effect transistor with low leakage current and a manufacturing method thereof suitable for low-power integrated circuit manufacturing. Background technique

[0002] According to the requirements of Moore's law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also cause various adverse effects to become more prominent. Due to the limitations of the physical mechanism of current generation in the MOSFETs used in IC design today, the subthreshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the conduction mec...

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