H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor and manufacturing method thereof

Abstract

The invention relates to an H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor and a manufacturing method thereof. The transistor comprises an H-shaped gate electrode, a conductivity type regulation and control gate and a left-right symmetric structure characteristic. According to the invention, the free switching function between a P type conductivity type and an N type conductivity type, and the bidirectional switching function are realized. The advantages of low static power consumption, low reverse leakage current, strong gate control capability and low subthreshold swing are realized. Compared with a common MOSFET type device, the schottky barrier tunneling effect is utilized to achieve better subthreshold characteristics and switching characteristics. The static power consumption of the transistor is reduced. Compared with a common tunneling field effect transistor, the bidirectional switching characteristics, wherein a drain electrode and a source electrode are symmetrical and interchangeable, can be realized, wherein the bidirectional switching characteristics cannot be realized by the common tunneling field effect transistor.The free regulation and control function of the P type conductivity type and the N type conductivity type, which cannot be realized by various existing transistor technologies, can be realized. Therefore, the H-shaped gate-controlled drain-source resistance-variable conductivity type adjustable transistor is suitable for popularization and application.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to an H-shaped gate-controlled source-drain resistance variable conduction type adjustable transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] When ordinary tunneling field effect transistors are used as switching devices, they use the tunneling mechanism of carriers, which can make the subthreshold swing of ordinary tunneling field effect transistors better than the 60mV / dec limit of MOSFETs. However, tunneling field effect transistors based on silicon-based materials have limited tunneling probability due to the limited band gap. Compared with MOSFETs, it is difficult to generate a conduction current of the same order. More seriously, the source and drain electrodes Doping with impurities of different conductivity types, the asymmetric structur...

AI Technical Summary

Problems solved by technology

However, in order to realize the switching characteristics of the gate electrode of the usual Schottky barrier field effect transistor (the gate electrode is forward-conducting and reverse-blocking or reverse-conducting and forward-blocking), it is necessary to perform a specific conductivity type on the source or drain region of the device. impurity doping, which makes it difficult to achieve a good Schottky contact between the source electrode and the source region, between the drain electrode and the drain region, and the doping of the source region and the drain region makes the gate electrode to the drain The control ability of the region and the source region is reduced, resulting in a decrease in the switching performance of the device

If the semiconductor region of the device is not doped, it is easy to realize the Schottky barrier between the source electrode and the source region, and the drain electrode and the drain region in the process, but this will cause the device to have different types in the forward and reverse directions. The carrier conduction of the gate electrode, that is, both the forward bias and reverse bias of the gate electrode will make the device in the conduction state, so that the gate loses its control function as the device switching device

[0004] In addition, based on the existing transistor technology, once the structure of the transistor is established, its conductivity type will also be established according to the conductivity type of the doped impurities. The transistors manufactured can only be P-type transistors or One of the N-type transistors whose conductivity type cannot be switched during operation

That is, during the working process of the transistor, its conductivity type cannot be changed by some control method

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