A source-drain resistance variable bidirectional switch field effect transistor and its manufacturing method

A field-effect transistor and bidirectional switch technology, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of gate loss control, device switching performance degradation, and gate electrode's ability to control drain and source regions. and other issues, to achieve the effect of high conduction current, low sub-threshold swing, and high forward conduction current
CN107833925BInactive Publication Date: 2019-10-15山东光岳九州半导体科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
山东光岳九州半导体科技有限公司
Publication Date
2019-10-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a source-drain resistive random bidirectional switching field effect transistor and a manufacturing method thereof. The device has the structural characteristic of bilateral symmetry, and a metal source-drain interchangeable region is controlled to act as a source region or a drain region by adjusting the source-drain interchangeable electrode voltage so as to change the direction of schottky barrier tunneling current. The device has the advantages of low static power consumption reverse leakage current and low sub-threshold swing and can realize the bidirectional switching function. Compared with the common MOSFETs type device, the intensity of the schottky barrier tunneling effect is controlled by using the gate electrode to change the resistance value of the source region and the drain region so as to realize the better switching characteristic; compared with the tunneling field effect transistor, the bidirectional switching field effect transistor has the source-drain interchangeable bidirectional symmetrical switching characteristic which is not possessed by the common tunneling field effect transistor and higher forward conduction characteristic; andcompared with the common schottky barrier transistor, the bidirectional switching field effect transistor has the advantages of high technology implementation and better reverse switching characteristic so as to be suitable for popularization and application.
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Description

technical field

[0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a source-drain resistance variable bidirectional switch field effect transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique

[0002] According to the requirements of Moore's law, MOSFETs, the basic unit of integrated circuits, must become smaller and smaller in size. The resulting problem is not only the increase in the difficulty of the manufacturing process, but also the adverse effects of the device itself caused by the smaller size. highlight. Due to the limitation of the physical mechanism of current generation of MOSFETs used in integrated circuit design, the subthreshold swing cannot be lower than 60mV / dec.

[0003] When ordinary tunneling field effect transistors are used as switching devices, the tunneling mechanism of carriers is used, which ca...

Claims

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