H-shaped grid-control source-drain symmetrically-changeable tunneling transistor and manufacturing method thereof

Abstract

The invention relates to an H-shaped grid-control source-drain symmetrically-changeable tunneling transistor and a manufacturing method thereof. The device has characteristics of a rectangular grid and a horizontally-symmetric structure and has relatively high grid control capability, a second type of impurity heavily-doping source-drain changeable region can be controlled to be used as a source region or a drain region by adjusting a source-drain changeable electrode voltage, and the direction of a tunneling current is changed. The device has the advantages of low static power consumption, low reverse leakage current and low sub-threshold amplitude, and the bidirectional switch function can be achieved. Compared with a conventional MOSFETs device, the device has the advantages that more switch characteristic is achieved by a tunneling effect; and compared with a conventional tunneling field-effect transistor, the transistor has the bidirectional switch characteristic which a source and a drain are symmetric and can be changed with each other and which are not possessed by the conventional tunneling field-effect transistor, and thus, the transistor is suitable for promotion and application.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to an H-shaped gate-controlled source-drain symmetric interchangeable tunneling transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] According to the requirements of Moore's law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also cause various adverse effects to become more prominent. Due to the limitation of the physical mechanism of current generation of MOSFETs used in integrated circuit design, the subthreshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the conduction m...

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Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable source and drain of MOSFETs type devices and the low subthreshold swing swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type devices cannot be reduced and ordinary tunneling field effect transistors It can only be used as a one-way switch. The present invention proposes an H-shaped gate-controlled source-drain symmetrical interchangeable tunneling transistor and its manufacturing method.

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