Barrier control type H-shaped grid-controlled two-way tunneling transistor and manufacturing method thereof

Abstract

The invention relates to a barrier control type H-shaped grid-controlled two-way tunneling transistor and a manufacturing method thereof. The barrier control type H-shaped grid-controlled two-way tunneling transistor provided by the invention comprises an H-shaped grid electrode, a barrier adjusting grid and a bilaterally symmetric structure. The tunneling transistor is strong in grid control capability and a metal source/drain interchangeable region can be controlled as a source region or a drain region through adjusting the electrode voltage of the source/drain interchangeable region. In this way, the direction of the tunneling current is changed. The invention has the advantages of low static power consumption, reverse leakage current, strong grid control capability, low sub-threshold swing and bidirectional switching function. Compared with a common MOSFET type device, more excellent switching characteristics are achieved through the tunneling effect. Compared with a common tunneling field effect transistor, source/drain interchangeable bidirectional symmetrical switching characteristics, which cannot be realized by the common tunneling field effect transistor, can be realizedby the above tunneling transistor. Therefore, the tunneling transistor is suitable for popularization and application.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a low-leakage barrier-regulated H-shaped gate-controlled bidirectional tunneling transistor suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] According to the requirements of Moore's law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also cause various adverse effects to become more prominent. Due to the limitations of the physical mechanism of current generation in the MOSFETs used in IC design today, the subthreshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the conduction mechanism of the current, a...

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Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable sources and drains of MOSFETs type devices and the low subthreshold swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type d

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