Rectangular grid-control U-shaped channel bilateral switch tunneling transistor and manufacturing method thereof

Abstract

The invention relates to a rectangular grid-control U-shaped channel bilateral switch tunneling transistor and a manufacturing method thereof. The device is provided with a rectangular grid and a symmetrical structural feature and has relatively high grid control capacity, and a heavily-doped source drain interchangeable region of second type of impurities can be controlled as a source region or adrain region by adjusting source drain interchangeable electrode voltage, so that the tunneling current direction is changed. The transistor has the advantages of low static power consumption, reverse leakage current, relatively high grid control capacity, low subthreshold amplitude and achievement of bilateral switch function. Compared with an ordinary MOSFETs type device, a preferable switchingcharacteristic is realized by using a tunneling effect; and compared with an ordinary tunneling filed effect transistor, the transistor has a source drain interchangeable bidirectionally symmetricalswitching characteristic that the ordinary tunneling filed effect transistor does not own, so that the transistor is applicable for popularization and application.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a rectangular gate-controlled U-shaped channel bidirectional switch tunneling transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] According to the requirements of Moore's law, the basic unit MOSFETs of integrated circuits will become smaller and smaller in size, which will not only increase the difficulty of the manufacturing process, but also cause various adverse effects to become more prominent. Due to the limitation of the physical mechanism of current generation of MOSFETs used in integrated circuit design, the subthreshold swing cannot be lower than 60mV / dec. When the ordinary tunneling field effect transistor is used as a switching device, the tunneling effect of carriers between the semiconductor energy bands is used as the conduction ...

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Problems solved by technology

[0004] In order to effectively combine and utilize the advantages of interchangeable source and drain of MOSFETs type devices and the low subthreshold swing swing of ordinary tunneling field effect transistors, solve the problem that the subthreshold swing of MOSFETs type devices cannot be reduced and ordinary tunneling field effect transistors It can only be used as a one-way switch, and the present invention proposes a rectangular gate-controlled U-shaped channel bidirectional switch tunneling transistor and its manufacturing method

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