A bracket-shaped gate-controlled source-drain resistance bidirectional switch transistor and its manufacturing method

Abstract

The invention relates to a bracket-shaped grid-control source drain resistive two-way switch transistor and a manufacturing method thereof. According to the bracket-shaped grid-control source drain resistive two-way switch transistor, a device is structurally characterized by comprising bracket grids symmetrical left and right and has strong grid control capability and can control a metal source and drain interchangeable area as a source area or a drain area by adjusting a source and drain interchangeable electrode voltage to change the tunneling current direction. The bracket-shaped grid-control source drain resistive two-way switch transistor has the advantages of being low in static power and reverse leakage current, high in grid control capacity, low in subthreshold value swing and capable of achieving the two-way switching function. Compared with an ordinary MOSFETs type device, the tunneling effect is used for achieving a more excellent switching characteristic. Compared with anordinary tunneling field effect transistor, the bracket-shaped grid-control source drain resistive two-way switch transistor has the interchangeable source and drain two-way symmetrical switching characteristic with which the ordinary tunneling field effect transistor lacks, and therefore the bracket-shaped grid-control source drain resistive two-way switch transistor is suitable for application and popularization.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in particular to a bracket-shaped gate-controlled source-drain resistance variable bidirectional switch transistor with low leakage current suitable for low-power integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] According to the requirements of Moore's law, MOSFETs, the basic unit of integrated circuits, must become smaller and smaller in size. The resulting problem is not only the increase in the difficulty of the manufacturing process, but also the adverse effects of the device itself caused by the smaller size. highlight. Due to the limitation of the physical mechanism of current generation of MOSFETs used in integrated circuit design, the subthreshold swing cannot be lower than 60mV / dec. [0003] When ordinary tunneling field effect transistors are used as switching devices, the tunneling mechanism of carriers...

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Problems solved by technology

However, in order to realize the switching characteristics of the gate electrode of the general Schottky barrier field effect transistor (the gate electrode is forward-conducting and reverse-blocking or reverse-conducting and forward-blocking), it is necessary to perform a specific conductivity type on the source or drain region of the device. impurity doping, which makes it difficult to achieve a good Schottky contact between the source electrode and the source region, between the drain electrode and the drain region, and the doping of the source region and the drain region makes the gate electrode to the drain The control ability of the region and the source region is reduced, resulting in a decrease in the switching performance of the device

If the semiconductor region of the device is not doped, it is easy to realize the Schottky barrier between the source electrode and the source region, and the drain electrode and the drain region in the process, but this will cause the device to have different types in the forward and reverse directions. The carrier conduction of the gate electrode, that is, both the forward bias and reverse bias of the gate electrode will make the device in the conduction state, so that the gate loses its control function as the device switching device

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