TFT preparation method, TFT, array substrate and display device

A technology of array substrates and substrates, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problem of small sub-threshold swing of driving TFT

Active Publication Date: 2019-04-19
WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art, the subthreshold swing of the driving TFT produced by the traditional low temperature polysilicon (Low Temperature Poly-silicon, LTPS) process is generally small, and if channel doping and anne

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  • TFT preparation method, TFT, array substrate and display device
  • TFT preparation method, TFT, array substrate and display device
  • TFT preparation method, TFT, array substrate and display device

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Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0025] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " The orientation or positional relationship indicated by "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation shown in the drawings Or positional relationship is only for the convenience of describing the present invention and simpl...

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Abstract

An embodiment of the invention discloses a TFT preparation method, a TFT, an array substrate and a display device. The TFT preparation method comprises the steps of: forming a buffer layer, a polysilicon layer, a gate insulating layer, a source layer, a drain layer and a gate layer on a substrate, wherein the polysilicon layer is formed on the buffer layer, the source layer and the drain layer areformed on both sides of the polysilicon layer, and the gate insulating layer is formed on the polysilicon layer, the source layer and the drain layer; and performing primary ion implantation on the polysilicon layer after the buffer layer and the polysilicon layer are formed on the substrate and before the gate insulating layer is formed on the substrate, so as to adjust a subthreshold swing to be not lower than a preset threshold value and enable a peak value of the implanted ion concentration falls in the buffer layer under the polysilicon layer. According to the TFT preparation method, adverse effect on other electrical characteristic parameters of the TFT cannot be caused under the condition of adjusting the subthreshold swing of the TFT, and the overall product performance of the TFTis improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a TFT preparation method, a TFT, an array substrate and a display device. Background technique [0002] Thin-film transistor (TFT) is one of the types of field-effect transistors, which are roughly manufactured by depositing various thin films on a substrate, such as semiconductor active layers, dielectric layers, and metal electrode layers. Thin film transistors play a very important role in the performance of display devices. Thin film transistors (TFTs) have been widely used in display devices due to their good switching characteristics. [0003] A typical application of TFT is to control the driving current or driving voltage of the driving TFT. Due to the process conditions, driving environment, etc., the electrical characteristics of the driving TFT, such as threshold voltage and mobility, may vary from pixel to pixel. At present, the gray scale of the dis...

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Application Information

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IPC IPC(8): H01L21/336H01L21/265H01L29/786
CPCH01L21/26513H01L29/66757H01L29/78675
Inventor 胡俊艳
Owner WUHAN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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