A 12T TFET SRAM cell circuit having ultra-low power consumption and high write margin

Abstract

The invention discloses a 12T TFET SRAM unit circuit with ultra-low power consumption and high write margin. Compared with a metal oxide semiconductor field effect transistor (MOSFET), the characteristics of smaller subthreshold swing, higher switching ratio and the like of the TFET are utilized; the problem of high static power consumption of a traditional MOSFET SRAM unit structure is solved; Under the same working voltage, such as 0.3 V to 0.6 V, compared with other TFET SRAM unit structures, the static power consumption of the TFET SRAM unit structure is at least reduced by four orders ofmagnitudes, and the write margin and the stability of the TFET SRAM unit structure are improved; Therefore, the problem of positive bias leakage current occurring when the TFET is used as the SRAM transmission tube is eliminated, the static power consumption of the cell is reduced, and the stability and the writing capability of the cell are improved.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a 12T TFETSRAM unit circuit with ultra-low power consumption and high write margin. Background technique [0002] With the development of mobile electronic products, people's demand for low power consumption of integrated circuits has become more and more urgent. In recent years, MOSFET (Metal-Oxide Semiconductor Field Effect Crystal) has become an important part of digital integrated circuits and analog integrated circuits. However, with the development of integrated circuit technology nodes, some shortcomings of MOSFETs in ultra-low power circuits make it difficult to obtain satisfactory results. Because as the size of the MOSFET decreases, the short channel effect of the MOSFET weakens its ability to turn off at sub-threshold voltage, which increases the static leakage current and static power consumption of the circuit. In addition, the subthreshold swing of MOSFET ...

AI Technical Summary

Problems solved by technology

At present, papers and experiments have shown that due to the unidirectional conduction characteristics of TFETs, it is difficult for the traditional structure of 6T TFET SRAM cells to achieve ideal read, write and hold functions at the same time.

The OA-6T structure has very good writing ability, but the reading ability is very poor, and even the reading operation cannot be performed

[0005] figure 2 The 8T TFET SRAM (marked as DP-8T) structure and image 3 Although the 10T TFET SRAM (denoted as ST-10T) structure of the Schmitt-Trigger structure shown solves the problem of weak reading ability of the OA-6T structure, due to the positive bias leakage generated when the TFET is used as the SRAM transmission tube to maintain the equal state current will cause its static power dissipation to be large

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