Thin-film transistor, manufacturing method of thin-film transistor, array substrate and display device

Abstract

The invention provides a thin-film transistor, a manufacturing method of the thin-film transistor, an array substrate and a display device. The manufacturing method of the thin-film transistor comprises the steps that a grid, a gate insulator, an active area, a source and a drain are formed on the substrate, the active area is made of a ZnON material, and nitrogen ions are implanted in the active area while the active area is formed, so that the subthreshold swing of the thin-film transistor is smaller than or equal to 0.5 mV / dec. According to the manufacturing method, as the nitrogen ions are implanted in the active area while the active area is formed, the concentration of the nitrogen ions, at the effective electricity conducting position, in the active area can be greatly improved, when the thin-film transistor works, nitrogen, lost due to the diffusion effect, in the active area can be supplemented sufficiently, the migration rate of nitrogen vacancy in the active area can be greatly increased, namely, the migration rate of current carriers in the active area is greatly increased, the subthreshold swing of the thin-film transistor is further reduced, and the semi-conductor property of the thin-film transistor is improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular, to a thin film transistor, a manufacturing method thereof, an array substrate and a display device. Background technique [0002] Thin film transistors (TFTs) have been widely used in flat panel display devices due to their good switching characteristics. [0003] Generally, a thin film transistor includes a gate, an active region, a source and a drain, and the source and the drain are respectively arranged at two ends of the active region and are respectively in contact with the active region. When the gate voltage is higher than its threshold voltage, the source and drain conduct through the active region, and carriers flow from source to drain or from drain to source. [0004] The active region of thin film transistors can currently use ZnON (zinc oxynitride) materials. During the conduction process of ZnON materials, the nitrogen vacancies in them have high mobility, ...

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Problems solved by technology

[0005] However, the different content of nitrogen element in the ZnON material forming the active region will lead to different mobility, and in the conduction process of the thin film transistor and the ITO (indium tin oxide) of the display substrate (such as the array substrate) of the display device During the annealing process, the nitrogen element in the active region will move to the adjacent gate insulating layer or passivation layer due to the diffusion effect, thereby reducing the mobility of nitrogen vacancies in the active region, resulting in the subthreshold of the thin film transistor Swing increases, and the increase of subthreshold swing will seriously affect the semiconductor characteristics of thin film transistors

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