Semiconductor device with multi-gate FinFETs and manufacturing method of semiconductor device and electronic equipment

A semiconductor and device technology, applied in the field of electronic equipment, can solve the problem of device reduction and achieve the effect of reducing the shutdown current and reducing the sub-threshold swing

Active Publication Date: 2016-07-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the limit value of SS at room temperature is about 60mV / dec, and it is difficult to reduce it with the reduction of device size

Method used

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  • Semiconductor device with multi-gate FinFETs and manufacturing method of semiconductor device and electronic equipment
  • Semiconductor device with multi-gate FinFETs and manufacturing method of semiconductor device and electronic equipment
  • Semiconductor device with multi-gate FinFETs and manufacturing method of semiconductor device and electronic equipment

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Embodiment Construction

[0012] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0013] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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PUM

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof and electronic equipment comprising the semiconductor device. The semiconductor device comprises multi-gate FinFETs, wherein one of gates of the multi-gate FinFETs is connected to a negative capacitor. According to the embodiment, the semiconductor device can comprise the first FinFET, the second FinFET and the negative capacitor; the first FinFET can comprise first fins and gates; the first fins are formed on a substrate; the gates are formed on the substrate and are intersected with the first fins; the second FinFET can comprise second fins, first gates and second gates; the second fins are formed on the substrate; each first gate is formed at the first side of the corresponding second fin on the substrate and is intersected with the corresponding second fin; each second gate is formed at the second side, opposite to the first side, of the corresponding second fin on the substrate, is intersected with the corresponding second fin and is opposite to the corresponding first gate; and the negative capacitor is connected to the second gates of the second FinFET.

Description

technical field [0001] The present disclosure relates to semiconductor technology, and more particularly, to a semiconductor device including a multi-gate Fin Field Effect Transistor (FinFET), a manufacturing method thereof, and an electronic device including the semiconductor device, wherein one of the gates of the multi-gate FinFET Connect with negative capacitor. Background technique [0002] The sub-threshold swing (Sub-threshold Swing, SS) is an important performance parameter of a metal oxide semiconductor field effect transistor (MOSFET), which is greater than zero, and it is hoped that the smaller the value, the better. At present, the limit value of SS at room temperature is about 60mV / dec, and it is difficult to decrease with the reduction of device size. It is expected to achieve smaller SS to improve device performance. Contents of the invention [0003] An object of the present disclosure is at least in part to provide a semiconductor device including a mult...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/423
CPCH01L21/823821H01L27/0924H01L29/7855H01L29/4232H01L29/4236H01L29/66484
Inventor 朱慧珑朱正勇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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