Heterojunction carbon nano-tube field effect transistor and preparation method thereof

Abstract

The invention provides a heterojunction carbon nano-tube field effect transistor of which a subthreshold swing is smaller than 60 millivolt/magnitude in the room temperature and a preparation method thereof. The device uses the semiconductor carbon nano-tube as the active layer, the heterojunction formed by the graphene layer and the semiconductor carbon nano-tube is used as the source end of the device, the gate medium and the gate electrode modulate the carbon nano-tube channel and the graphene/carbon nano-tube junction at the same time, so that the turn-off of the transistor is accelerated by using the character that the graphene/carbon nano-tube junction barrier is modulated by the gate voltage. The transistor can control the polarity through the selection of the source-drain metal, namely the metal of high power function is used as the source-drain electrode for realizing the p-type field effect transistor, and the metal of low power function is used as the source-drain electrode for realizing the n-type field effect transistor.

Description

technical field [0001] The invention belongs to the field of solid electronic transistor devices, and in particular relates to a nanometer heterojunction field effect transistor and a preparation method thereof. Background technique [0002] The metal‐oxide‐semiconductor (MOS) field‐effect‐transistor (FET) is the basis for building modern integrated circuits. Field-effect transistors are switched by gate voltage, and their turn-off speed is described by sub-threshold swing. The smaller the sub-threshold swing, the faster the turn-off speed of the transistor. For conventional MOSFET devices, the sub-threshold swing is limited by the thermally excited carrier concentration, and the limit value at room temperature is 60 mV / order. In general, due to insufficient gate efficiency and parasitic effects, sub-threshold The threshold swing will be greater than 60 mV / order. The sub-threshold swing of 60mV / Dec limits the reduction of the threshold voltage of the field effect transisto...

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Problems solved by technology

However, in the on-state of the device, the transport of carriers still has to go through inter-band tunneling, which greatly affects the on-state current of the tunneling transistor, and the speed of the tunneling transistor cannot meet the normal speed due to insufficient on-state driving current. IC work requires

Devices that use tunneling transistors to achieve low sub-threshold swings are currently of no practical value. Therefore, a transistor with a new structure is needed that can achieve sub-threshold swings of less than 60 mV / order at room temperature while ensuring device stability. The on-state current is high enough to serve as a basic element for building future ultra-low operating voltage integrated circuits

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