High-side double-NMOS tube segmented driving system for GaN power tube

A segmented drive, power tube technology, applied in transistors, electrical components, electronic switches, etc., can solve problems such as increasing chip area, and achieve the effect of small dVS/dt noise

Pending Publication Date: 2021-11-16
无锡安趋电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the bootstrap structure can solve the problem of pulling up the gate-source voltage V of the NMOS transistor GS The problem of decreasing as the output voltage increa

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  • High-side double-NMOS tube segmented driving system for GaN power tube
  • High-side double-NMOS tube segmented driving system for GaN power tube
  • High-side double-NMOS tube segmented driving system for GaN power tube

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Example Embodiment

[0024] The principles and features of the present invention will be described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0025] figure 1 It is an application topology diagram of the present invention in a half-bridge drive circuit. A high-side dual NMOS transistor segmental drive circuit is used to replace the prior art high-side dual NMOS transistor drive circuit, and the rest is the same as the prior art. The input PWM signal first generates high and low non-overlapping signals through the dead zone control circuit, and the low side signal V GLThe low-side GaN power transistor is driven by the low-side drive circuit. The high-side signal needs to be converted into a high-voltage domain signal by a high-voltage level shift circuit, and then the high-side GaN power transistor is driven by the high-side dual NMOS segmented drive c...

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Abstract

The invention discloses a double-NMOS segmented driving circuit for a high-side GaN power tube. In the starting process of the high-side GaN power tube, a dVS/dt detection circuit detects a VS rising slope and converts the VS rising slope into a control voltage Vctr, the Vctr controls the rising speed of the grid voltage of a pull-up NMOS by controlling the magnitude of the output current of a voltage-controlled current source, and the voltage of the grid voltage of the pull-up NMOS is controlled by the control voltage Vctr; therefore, the size of the grid driving current of the GaN power tube in the Miller platform period is adjusted; when the end of the Miller platform is detected, the gate voltage of the NMOS is lifted and pulled up through the charge pump, the gate driving current of the GaN power tube is maximized, the complete opening of the GaN power tube is accelerated, small dv/dt noise is realized, the high opening speed of the high-side GaN power tube is ensured, the circuit structure is easy to realize, and the occupied area is small.

Description

technical field [0001] The invention relates to a drive circuit for high-side power devices in half-bridge driving, in particular to a dual NMOS tube segment drive system for high-side GaN (potassium nitride) power tubes, which belongs to the field of electronic technology and integrated circuit technology. Background technique [0002] The half-bridge gate drive circuit is widely used in motor drives, electronic ballasts, and DC / DC voltage conversion circuits. It is used to drive two high-side and low-side power switching devices connected in the form of totem poles to alternately conduct through to achieve output voltage regulation. Compared with the traditional use of silicon-based MOSFETs as high and low side power tubes, GaN power devices have the advantages of fast switching speed, high operating frequency, small on-resistance, and good temperature characteristics. GaN power devices are high-frequency, high-power-density , Ideal switching devices in high-efficiency po...

Claims

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Application Information

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IPC IPC(8): H03K17/042H03K17/16H03K17/687
CPCH03K17/04206H03K17/161H03K17/687
Inventor 余思远祝靖施刚张伟陆兆俊朱涛
Owner 无锡安趋电子有限公司
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