Embodiments of the present application relate to a
semiconductor structure and a preparation method thereof. The
semiconductor structure comprises: a substrate, a trench is formed in the substrate; a conductive layer is located in the trench, the conductive layer comprises a first conductive layer and a second conductive layer, the second conductive layer is located on the first conductive layer, and a projection area of a bottom of the second conductive layer in the trench is greater than a projection area of a top of the first conductive layer in the trench; a
dielectric layer is located between the conductive layer and an inner wall of the trench, and a top of the
dielectric layer is lower than a top of the first conductive layer; an
isolation layer is located on the conductive layer; and a gap is enclosed by the
isolation layer, the conductive layer, the
dielectric layer and a side wall of the trench. A
work function of the first conductive layer is greater than a
work function of the second conductive layer. The opening speed of the
transistor is improved, the gate-induced drain leakage current of the
semiconductor structure is reduced, the reliability of the
semiconductor structure is improved, and the
power consumption of the
semiconductor structure is reduced.