Preparation method of enhanced field effect transistor based on two-dimensional planar heterojunction

Abstract

The invention relates to a preparation method of an enhanced field effect transistor based on a two-dimensional planar heterojunction, and relates to the application field of microelectronic devices.The preparation method comprises the steps of transferring a graphene film to a monocrystalline silicon wafer substrate with an oxide layer by adopting wet transfer; uniformly spinning a photoresist on the graphene film, and transferring a pattern to the photoresist through exposure; etching the graphene film into graphene strips, and removing the photoresist; enabling the substrate with the graphene strips to serve as a substrate for growth, growing an MX2 type single-layer or few-layer material according to a CVD method, and forming a graphene-MX2-graphene in-plane heterojunction; and evaporating and depositing Ti / Au metal on the graphene-MX2-graphene in-plane heterojunction to obtain a two-dimensional planar heterojunction enhanced field effect transistor. The field effect transistor with a high switching ratio is obtained by combining the semi-metal material graphene with high carrier mobility and the MX2 two-dimensional material with the band gap being adjustable along with variations in number of layers, and the field effect transistor has excellent characteristics of very small dark current when being applied to photoelectric detection.

Description

technical field [0001] The invention relates to the application field of microelectronic devices, in particular to a method for preparing an enhanced field effect transistor with high switching ratio and low power consumption that can be used in digital logic circuits. technical background [0002] The successful preparation of graphene in 2004 proved that two-dimensional materials can exist stably in nature, and also started the research boom of two-dimensional nanomaterials. For two-dimensional materials, single-layer graphene has the thickness of a single atomic layer, and electrons are confined within the two-dimensional scale, making its electronic properties enhanced. Therefore, single-layer graphene has a high carrier mobility at room temperature, reaching 2.5×10 5 cn 2 V -1 the s -1 . Although single-layer graphene has unique electrical properties and excellent stability, it has excellent application potential in the field of microelectronics in the future, but ...

AI Technical Summary

Problems solved by technology

Although single-layer graphene has unique electrical properties and excellent stability, it has excellent application potential in the field of microelectronics in the future, but graphene materials have a linear dispersion relationship near the Fermi level, and Klein tunneling occurs. Wear, resulting in devices made of materials with very low switching ratio

Although graphene can have a certain band gap by doping, etc., the carrier mobility is greatly affected by impurity scattering or defect effects; at the same time, it cannot be well controlled when used as a logic device channel material When the device is turned off, there will be leakage, etc.

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