Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resistive random access memory based on MoS2 quantum dot embedded organic polymer and preparation method of resistive random access memory

A technology of resistive memory and quantum dots, applied in the fields of organic semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effect of strong repeatability, novel material system, and improved stability

Active Publication Date: 2017-02-22
SOUTH CHINA NORMAL UNIVERSITY
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the existing resistive memory needs to be further improved in terms of device stability, switching ratio, repeatability, and manufacturing cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory based on MoS2 quantum dot embedded organic polymer and preparation method of resistive random access memory
  • Resistive random access memory based on MoS2 quantum dot embedded organic polymer and preparation method of resistive random access memory
  • Resistive random access memory based on MoS2 quantum dot embedded organic polymer and preparation method of resistive random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The present invention provides a MoS-based 2 The resistive variable memory with quantum dots embedded in organic polymers, its structure diagram can be found in figure 1 . The resistive variable memory includes a bottom electrode 3 , a top electrode 1 , and a resistive variable function composite layer 2 sandwiched between the bottom electrode 3 and the top electrode 1 . Wherein the resistive function composite layer 2 comprises a first organic polymer film layer 23, a second organic polymer film layer 21, and MoS sandwiched between the first organic polymer film layer 23 and the second organic polymer film layer 21 2 Quantum dot / organic polymer composite film layer 22 . The bottom electrode 3 and the top electrode 1 are stacked and connected to the first organic polymer film layer 23 and the second organic polymer film layer 21 respectively. As a specific implementation, the bottom electrode 3 can be at least one of conductive films such as ITO, AZO, and FTO, and th...

Embodiment 2

[0050] Based on MoS in Example 1 2 The resistive variable memory with quantum dots embedded in organic polymers can be prepared by referring to the method of this embodiment, and the entire preparation process of the embodiment is carried out in air at room temperature.

[0051] The preparation method comprises the following steps:

[0052] 1) MoS 2 The powder was added to DMF to form a mixed solution with a concentration of 2 g / L. After ultrasonic mixing for 4 hours, it was added to the reactor, and the solvothermal reaction was performed at a temperature of 200 ° C for 8 hours. After the reactor was naturally cooled, the liquid in the reactor was taken out and allowed to stand for 24 hours. Take 1 / 3 of the supernatant for centrifugation at a speed of 6000-10000r / min, and then take 1 / 3 of the supernatant to obtain MoS 2 DMF solution of quantum dots;

[0053] 2) Add 60 mg of PMMA powder to 1.94 g of THF and ultrasonically mix for 4 hours to obtain a PMMA solution;

[0054]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a resistive random access memory based on a MoS2 quantum dot embedded organic polymer and a preparation method of the resistive random access memory. The resistive random access memory comprises a bottom electrode, a top electrode, and a resistive random functional composite layer clamped between the bottom electrode and the top electrode; the resistive random functional composite layer includes a first organic polymer film layer, a second organic polymer film layer and a MoS2 quantum dot / organic polymer composite film layer clamped between the first organic polymer film layer and the second organic polymer film layer, and the bottom electrode and the top electrode are connected with the first organic polymer film layer and the second organic polymer film layer respectively in a stacking mode. The resistive random access memory has the advantages of being high in repeatability, stable in device performance, high in response speed and the like, and can be used in the highly integrated large capacity memory field.

Description

technical field [0001] The invention belongs to the technical field of resistive memory preparation, in particular to a MoS-based 2 A resistive variable memory with quantum dots embedded in an organic polymer and a preparation method thereof. Background technique [0002] Resistance random access memory (RRAM) is a new type of non-volatile memory developed based on the current physical and technical bottlenecks of Flash memory. RRAM is considered to be a new type of semiconductor memory with the most potential. The main principle is the electroresistance effect, that is, under the action of an electric field, some materials can undergo continuous and reversible switching between high resistance and low resistance states. The RRAM prepared by this effect has unique advantages such as non-volatility, directionality, reversibility, long persistence, and large change range. The high and low resistance states of the RRAM can correspond to Boolean logic numbers "1" and "0" respe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H10K99/00
CPCH10K99/00H10K71/12H10K85/10H10K2102/00
Inventor 陈心满王栋梁冀凤振匡鲤萍李艳章勇
Owner SOUTH CHINA NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com