Flexible low-voltage organic field effect transistor and manufacturing method thereof

A low-voltage, organic field technology, applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as polymer instability, achieve the effect of reducing defects, maintaining stability, and good stability

Inactive Publication Date: 2016-02-17
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Purpose of the invention: In order to take advantage of the cross-linked polymer insulating layer and solve the problem of polymer instability

Method used

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  • Flexible low-voltage organic field effect transistor and manufacturing method thereof
  • Flexible low-voltage organic field effect transistor and manufacturing method thereof
  • Flexible low-voltage organic field effect transistor and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0044] (1) Prepare cross-linked polyvinylpyrrolidone (PVP) solution and polymethyl methacrylate (PMMA) solution. PMMA is dissolved in ethyl acetate; cross-linked PVP uses 4,4'-(hexafluoroisopropylidene) diphthalic anhydride (HDA) as a cross-linking agent, the mass ratio of PVP to HDA ​​is 10:1, HDA is 6mg, PVP 60 mg; use 2ml propylene glycol methyl ether acetate (PGMEA) as a solvent; triethylamine as a catalyst, and configure it into a catalytic solution with a concentration of 3 μl / ml (triethylamine / PGMEA), using 1ml of the above catalytic solution; finally configure it into a PVP concentration 20mg / ml solution;

[0045] (2) Use a 150 μm plastic PET substrate as a substrate to be ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, and then placed in an oven at 120°C for drying;

[0046] (3) Evaporate a 300 nm thick aluminum electrode on the surface of a clean substrate

[0047] (4) Spin-coating step (1) The configured high-insulation polymer so...

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Abstract

The invention discloses a flexible low-voltage organic field effect transistor and a manufacturing method thereof. Three layers of polymers are added between a gate and a semiconductor layer interface to serve as an insulated layer; the overall device comprises a source and drain electrode, a semiconductor, a high-insulation polymer, a high-dielectric constant material polymer, a high-insulation polymer, a gate, and a flexible transparent plastic substrate sequentially from top to bottom; and the dielectric layer with the structure has excellent insulation and good stability. Through measuring electrical properties and a semiconductor particle growth shape, whether the device is a flexible low-voltage organic field effect transistor can be judged. The organic field effect transistor has the advantages of realizing high mobility and large switch ratio under low voltage, maintaining good performance when bias voltage is applied and in a high temperature condition, and having good stability features in different bending modes.

Description

technical field [0001] The invention relates to a flexible low-voltage organic field-effect transistor and a preparation method thereof, in particular to a method for preparing a flexible low-voltage organic field-effect transistor by using three insulating layers. Background technique [0002] Flexible organic field-effect transistors can be widely used in radio frequency tags, flexible displays, large-area sensor arrays, and large-scale integrated circuits due to their low cost, wide range of material sources, and low-temperature large-area preparation. Flexible organic field-effect transistors have the advantages of foldability, light weight, and low cost, so they have broad application prospects in low power consumption and portable electronics. However, due to the high operating voltage of most flexible devices and the high power consumption of actual circuits, it is difficult to apply them on a large scale. In order to reduce the operating voltage of flexible organic ...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K71/164H10K10/471H10K10/474H10K10/466H10K77/111Y02E10/549
Inventor 仪明东黄维王涛解令海
Owner NANJING UNIV OF POSTS & TELECOMM
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