Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Homogeneous 'scintillator-semiconductor-scintillator' composite X-ray detector

A technology of composite detectors and linear array detectors, which is applied in the field of sensors, can solve the problems of complex process and low efficiency, and achieve the effect of simple production method, single production principle and short production cycle

Active Publication Date: 2017-08-04
NORTHEASTERN UNIV
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the problems of complex process and low efficiency in the prior art, and combining the advantages of indirect type and direct type, the present invention provides a "scintillator-semiconductor-scintillator" composite X-ray detector with the same matrix

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Homogeneous 'scintillator-semiconductor-scintillator' composite X-ray detector
  • Homogeneous 'scintillator-semiconductor-scintillator' composite X-ray detector
  • Homogeneous 'scintillator-semiconductor-scintillator' composite X-ray detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0029] Such as figure 1 As shown, it includes a front scintillator 1, a semiconductor photoconductive detector, and a rear scintillator 3. The semiconductor photoconductive detector comprises a semiconductor substrate 2 (the substrate is not doped), an electrode one 4, an electrode two 5 and lead wires;

[0030] The same-substrate "scintillator-semiconductor-scintillator" composite X-ray detector can be obtained by general thin film growth techniques, such as magnetron sputtering or sol-gel method.

[0031] Take the magnetron sputtering method as an example:

[0032] First, prepare the target material of the matrix and the dopant substance. If ZnO is used as the matrix, Zn can be used as the matrix target material, and Ga or In is used as the dopant substance.

[0033] Using double-target magnetron sputtering equipment, first load two kinds of targets, fix two electrodes (such as interdigital electrodes) on the substrate, close the vacuum chamber, and start vacuuming.

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a homogeneous 'scintillator-semiconductor-scintillator' composite X-ray detector including a front scintillator, a semiconductor photoconductive detector, and a rear scintillator that are in a sandwich structure and are combined through the interatomic attractive force without the need of a couplant. The front scintillator, and the rear scintillator are same in chemical composition and different in thickness, and are obtained by doping the matrix; and the semiconductor photoconductive detector comprises a semiconductor matrix, an electrode and a lead. The composite X-ray detector can be obtained by a universal thin film growth technique, in the growth process, only the doping concentration needs to be adjusted, the scintillator, the couplant, the photodiode or photomultiplier are simplified into one material, so that the composite X-ray detector has the advantages of simple production method, single production principle, short production cycle, and low production cost. Meanwhile, the couplant is not needed, the scintillators and the photoconductive detector are tightly combined through the interatomic attractive force, the light loss is small, and the detection efficiency is high.

Description

technical field [0001] The invention belongs to the field of sensors, in particular to a "scintillator-semiconductor-scintillator" composite X-ray detector with the same matrix. Background technique [0002] At present, X-ray detection technology has been widely used in safety inspection, medical health, non-destructive testing and other fields, and its core component is the detector. Currently used X-ray detection is divided into direct type and indirect type. The direct type is made of the principle of photoelectrons generated by semiconductor materials under X-ray irradiation. The detection efficiency is low and it is only suitable for low-energy X-rays; the indirect type uses scintillators to convert X-rays. For visible light, semiconductor photodiodes or photomultiplier tubes are used to detect visible light. The two are coupled together through coupling agents such as optical glue or silicone oil. With different scintillators, they are suitable for X-rays in different ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01T1/24G01T1/202
CPCG01T1/202G01T1/24
Inventor 谭俊孙丽娜孙伟宋丹邓江宁孙永辉王新丽董宇
Owner NORTHEASTERN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products