Method of making ZnO ultraviolet photoconductive detector with vertical structure

A vertical structure, ultraviolet light technology, applied in the field of photoelectric detection, can solve the problems of poor reliability and repeatability, difficult preparation, etc., and achieve the effects of easy control, simple preparation process, and easy industrialization
CN100517771CInactive Publication Date: 2009-07-22XI AN JIAOTONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XI AN JIAOTONG UNIV
Publication Date
2009-07-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for producing a ZnO ultraviolet photoconductive detector with high-performance vertical structure; an ITO film and a ZnO film are adopted by the method to be deposited sequentially on a sapphire substrate or a quartz substrate, the ZnO film of the film undergoes the 400 DEG C thermal processing in the oxygen atmosphere, so as to improve the photoelectric response characteristic of the ZnO film, and then the ITO film is exposed after the corrosion of the ZnO film to form a ZnO table facet, and the metal A1 is deposited on the ZnO table facet and taken as the ohmic contact electrode so as to acquire the ZnO ultraviolet photoconductive detector with vertical structure. The invention has the advantages of simple manufacturing process, low cost, easy controlling, convenient optoelectronic integration, easy industrialization, and high practical value.
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Description

technical field

[0001] The invention belongs to the field of photoelectric detection, and relates to a preparation method of a ZnO ultraviolet photoconductive detector with a vertical structure. Background technique

[0002] Ultraviolet detection technology is another new detection technology developed after infrared and laser detection technology. Ultraviolet detectors are widely used in national defense and military, astronomy, environmental monitoring, combustion engineering, water purification, flame detection, biological effects, sky communication and environmental pollution monitoring and other fields, and have extremely high military and civilian value. Especially in national defense applications, ultraviolet early warning based on missile ultraviolet radiation detection has become the research focus of ultraviolet detection.

[0003] Since ZnO (Eg=3.34eV) has many advantages over other III-V wide bandgap compound semiconductors, such as higher exciton binding energy...

Claims

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