An Electromagnetic Induced Potential Well Semiconductor Photoconductive Detection Device Under the Bandgap Room Temperature

Abstract

The invention discloses an electromagnetic induction potential well semiconductor forbidden room temperature light conductivity detector, the detector is formed on the semiconductor substrate from a semiconductor epitaxy, a passivation protective layer and a metal layer of the positive and negative electrode in turn. The detector is based on the electromagnetic induction potential well and remote control of lower chamber temperature and photoconductive mechanism, suitable parameter (carrier concentration, migration rate and the like) semiconductor material is selected, the reasonable detector size is designed through theory analysis, high speed optical signal to electrical signal conversion and detection are realized through the photoelectric signal being amplified and read by the pre-amplifying circuit. The device has the advantages that work can be carried out in room temperature, the stronger photoconductivity is produced in far less than the semiconductor forbidden, the sensibility is high, responding speed is fast, the structure is simple and compact, the large scale integration can be carried out and the like.

Description

technical field [0001] The invention relates to the field of photoelectric conversion devices, in particular to a room-temperature photoconductive detection device under the forbidden band of an electromagnetically induced potential well semiconductor. Background technique [0002] The conversion of optical information into electrical signals is a key foundation in the field of optoelectronic research. At present, various widely used commercial semiconductor photodetectors exhibit the advantages of high signal-to-noise ratio and fast response speed. They have shown strong appeal in applications such as optical communications, detection imaging, astronomy, biology, medicine, and non-destructive material characterization. However, there is a problem of wavelength (photon energy) selectivity in traditional photodetection: in order to excite carriers, the detected photons must have sufficient energy to excite the transition between the conduction band and the valence band, and ...

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Problems solved by technology

[0004] Aiming at the problems of long-wavelength (low-energy) photon detection, thermal noise excitation and optical excitation form a competitive mechanism, resulting in a significant drop in device conversion efficiency, low-temperature operation, complex structure, and low signal-to-noise ratio. The present invention proposes an electromagnetically induced potential well Room temperature photoconductive detection device under the semiconductor band gap, which is convenient for large-scale integration, making linear array and area array detection possible

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