HgCdTe infrared photoconductive detector with reference element structure

A reference element and detector technology, applied in the field of photodetectors, can solve the problem that mercury cadmium telluride infrared detectors cannot measure the temperature of high-speed moving objects, and achieve the effects of fast response speed and simplified circuit structure

Inactive Publication Date: 2011-04-06
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the unit mercury cadmium telluride infrared detector cannot measure the temperature of high-speed moving objects and simplify the signal processing circuit

Method used

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  • HgCdTe infrared photoconductive detector with reference element structure
  • HgCdTe infrared photoconductive detector with reference element structure
  • HgCdTe infrared photoconductive detector with reference element structure

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Embodiment Construction

[0014] The specific implementation of the present invention will be described in detail below with the structure of a 10-element linear mercury cadmium telluride photoelectric device:

[0015] 1) The conventional process processes the body material HgCdTe to about 10 microns.

[0016] 2) Chemically corroding the mercury cadmium telluride sheet, and then using anodic oxidation to form a passivation layer.

[0017] 3) The mercury cadmium telluride chip obtained in the second step is subjected to positive resist photolithography, and then ion etching for 180 minutes to obtain a device pattern.

[0018] 4) Dissolving the positive resist with ethanol, and then successively using HF etching solution and 3% bromomethanol solution to etch the HgCdTe surface to obtain a HgCdTe chip with less damage to the surface brightness.

[0019] 5) Conventional anodic oxidation to form a passivation film.

[0020] 6) Positive photolithography covers the photosensitive surface, and chromium gold ...

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Abstract

The invention discloses an HgCdTe infrared photoconductive detector with a reference element structure, wherein the reference element comprises a substrate, an epoxy glue layer, a first-side HgCdTe oxidation layer, a bulk material HgCdTe layer, a second-side HgCdTe oxidation layer, a silica insulating layer, a negative photoresist insulating layer, a metal indium layer, and a metal gold layer; and the reference element is characterized in that an edge photosensitive surface is covered with a double-layer insulating layer, an infrared absorption layer and an infrared light reflection layer. The HgCdTe infrared photoconductive detector with a reference element structure has the advantages: the problem of temperature drift existing in the HgCdTe infrared photoconductive detector is solved, and because a differential circuit is adopted to replace a temperature-compensation circuit, the influence of ambient temperature variation on the accuracy of the HgCdTe detector can be reduced, and the circuit structure can greatly be simplified; the detector can be used for measuring the temperatures of low-speed moving objects and high-speed moving objects; and the detector is quick in response speed and has a self-compensating function.

Description

technical field [0001] The invention relates to photoelectric detector technology, in particular to a multi-element mercury cadmium telluride infrared photoconductive detector with a reference element. Background technique [0002] When the single-unit HgCdTe photoconductive detector measures the temperature of the target object, the temperature drift of the detector needs to be considered. Therefore, it is necessary to adopt an extremely complex temperature compensation circuit during circuit design. This solution will make the response speed of the HgCdTe detector slow and the temperature compensation effect will be poor. [0003] The unit HgCdTe photoconductive detector can obtain very accurate temperature measurement results when detecting low-speed moving objects, but when measuring the temperature of high-speed moving target objects, the response curve will be distorted and the response sensitivity will be reduced due to thermal hysteresis. This situation greatly incr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/10G01J5/02
Inventor 兰添翼龚玮赵水平李向阳王妮丽刘诗嘉乔辉朱龙源
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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