Method for forming film

Abstract

Disclosed is a method for forming an oxide film on the surface of a substrate to be processed at a certain process temperature in a process chamber. This method comprises a heating step wherein the substrate is heated to the certain process temperature, and this heating step includes a substep wherein the substrate is held in an atmosphere containing oxygen before the temperature of the substrate reaches 450 DEG C.

Description

technical field

[0001] The present invention generally relates to a method of forming an insulating film suitable for the manufacture of semiconductor devices, especially ultra-fine high-speed semiconductor devices.

[0002] In current ultra-high-speed semiconductor devices, gate lengths of less than 0.1 μm are becoming possible due to advances in miniaturization processes. Generally, the operating speed of semiconductor devices increases with miniaturization. However, in such a very miniaturized semiconductor device, the gate insulating film needs to be reduced according to the law of proportionality due to the shortening of the gate length due to miniaturization. film thickness. Background technique

[0003] However, when the gate length is 0.1 μm or less, the thickness of the gate insulating film needs to be set to 1 to 2 nm or less when using a conventional thermal oxide film. However, in such a very thin gate insulating film, The tunnel current increases, and as a res...

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