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Method for forming film

一种成膜方法、氧化膜的技术，应用在电气元件、半导体/固态器件制造、电路等方向，达到抑制SiC形成、高生产能力、界面平坦的效果

Inactive Publication Date: 2006-11-01
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In addition, when the initial temperature rise step is performed in a non-oxidizing atmosphere so as not to form such an oxide film, in addition to the problem of unevenness described above, it is known that organic substances in the air adhering to the surface of the silicon substrate vary with temperature. Raised to react with silicon on the surface of the substrate to form SiC

Method used

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Experimental program
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Embodiment

[0121] Thus, by using figure 1 The substrate processing apparatus 20 can form a high-quality silicon oxide film, silicon nitride film, or silicon oxynitride film on the surface of a silicon substrate at a low temperature below 450° C. Perform the above UV-O at high substrate temperature 2 processing or above RF-N 2 Treatment to obtain higher quality silicon oxide film or nitride film expectations.

[0122]Preferred embodiments of the present invention corresponding to such desires are described below.

no. 1 example

[0124] Figure 7 shows the flow of the film formation process in the first embodiment of the present invention picture .

[0125] refer to Figure 7 , in this embodiment, in step 11, the silicon substrate is introduced into figure 1 In the processing container 21 of the substrate processing device 20; in step 12, the substrate is heated to a processing temperature above 450°C, such as about 650-750°C; in step 13, the above-mentioned UV-O is carried out at the above-mentioned processing temperature 2 treatment to form a high-quality silicon oxide film (radical oxide film) on the surface of the above-mentioned silicon substrate. Furthermore, if necessary, in step 14, by performing RF-N 2 treatment to convert the aforementioned silicon oxide film into an oxynitride film.

[0126] as Figure 7 The heating process 12, Figure 8 Indicates one of the heating schemes currently in use.

[0127] refer to Figure 8 A silicon substrate with a diameter of 30 cm and a clean surfac...

no. 2 example

[0194] Figure 24 A film forming method according to a second embodiment of the present invention is shown.

[0195] refer to Figure 24 , in this embodiment, in step 1, the silicon substrate cleaned by DHF is introduced into the processing container 21 of the above-mentioned substrate processing device 20 as the above-mentioned processing substrate W; in step 2, in N 2 or in an inert atmosphere such as Ar, the temperature of the above-mentioned silicon substrate is raised to a temperature of 450°C where SiC will not be formed; then, in step 3, the above-mentioned UV-O 2 treatment to form a uniform silicon oxide film of about 0.4 nm on the surface of the silicon substrate. When the substrate temperature is set below 450°C, the hydrogen atoms terminated on the surface of the silicon substrate are not detached, and the surface of the silicon substrate is terminated by hydrogen. 2 Oxidation, so SiC will not form on the substrate surface.

[0196] exist Figure 24 In the film...

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Abstract

Disclosed is a method for forming an oxide film on the surface of a substrate to be processed at a certain process temperature in a process chamber. This method comprises a heating step wherein the substrate is heated to the certain process temperature, and this heating step includes a substep wherein the substrate is held in an atmosphere containing oxygen before the temperature of the substrate reaches 450 DEG C.

Description

technical field [0001] The present invention generally relates to a method of forming an insulating film suitable for the manufacture of semiconductor devices, especially ultra-fine high-speed semiconductor devices. [0002] In current ultra-high-speed semiconductor devices, gate lengths of less than 0.1 μm are becoming possible due to advances in miniaturization processes. Generally, the operating speed of semiconductor devices increases with miniaturization. However, in such a very miniaturized semiconductor device, the gate insulating film needs to be reduced according to the law of proportionality due to the shortening of the gate length due to miniaturization. film thickness. Background technique [0003] However, when the gate length is 0.1 μm or less, the thickness of the gate insulating film needs to be set to 1 to 2 nm or less when using a conventional thermal oxide film. However, in such a very thin gate insulating film, The tunnel current increases, and as a res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316H01L21/00H01L21/318
CPCH01L21/0214H01L21/02238H01L21/02255H01L21/02332H01L21/0234H01L21/67109H01L21/67155H01L21/31H01L21/31662
Inventor 青山真太郎井下田真信山崎和良
Owner TOKYO ELECTRON LTD
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