Photovoltaic device

A photoelectric conversion device, transparent electrode technology, applied in photovoltaic power generation, circuits, electrical components and other directions, can solve problems such as neglect
CN1638153AInactive Publication Date: 2005-07-13MITSUBISHI HEAVY IND LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
MITSUBISHI HEAVY IND LTD
Publication Date
2005-07-13
Estimated Expiration
Not applicable · inactive patent

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Abstract

A photoelectric conversion device that achieves a high photoelectric conversion rate using a transparent electrode or a transparent conductive film having an optimal relationship between resistivity and transmittance. On the transparent insulating substrate, there are at least sequentially stacked: a first transparent electrode, a pin structure or a nip structure microcrystalline silicon layer composed of a p-type silicon layer, an i-type silicon layer and an n-type silicon layer, a second transparent electrode and The backside electrode, wherein at least one of the first transparent electrode and the second transparent electrode is a Ga-added ZnO layer, and the content of Ga is less than or equal to 15 atomic % relative to Zn.
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Description

technical field

[0001] The present invention relates to a photoelectric conversion device whose transparent electrode is ZnO (zinc oxide). Background technique

[0002] Conventionally, silicon-based thin-film photoelectric conversion devices have been known as photoelectric conversion devices such as solar cells. Usually, a first transparent electrode, a silicon-based semiconductor layer (photoelectric conversion layer), a second transparent electrode, and a metal electrode film are laminated in this order on the substrate of the photoelectric conversion device.

[0003] As a transparent electrode, a material with low resistance and high light transmittance is required, so ZnO (zinc oxide), SnO 2 (tin dioxide) and so on.

[0004] The low resistance of such a transparent electrode is achieved by adding Ga (gallium) oxide, Al (aluminum) oxide, fluorine, or the like.

[0005] In addition, when an amorphous silicon thin film is used as a photoelectric conversion layer, there ...

Claims

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