Nitride semiconductor structure and semiconductor light emitting element
A technology of nitride semiconductors and semiconductors, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the luminous efficiency of light-emitting diodes, affecting the luminous efficiency of light-emitting diodes, and deteriorating interface characteristics, so as to increase internal quantum efficiency and improve internal Quantum efficiency, the effect of reducing compressive stress
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[0046] The purpose of the present invention and its structural design and functional advantages will be described according to the following drawings and preferred embodiments, so as to have a more in-depth and specific understanding of the present invention.
[0047] First of all, in the description of the following embodiments, it should be understood that when it is indicated that a layer (or film) or a structure is disposed "on" or "under" another substrate, another layer (or film), or another structure , which can be "directly" located on other substrates, layers (or films), or another structure, or have more than one intermediate layer between them in an "indirect" manner. The location of each layer can be described with reference to the drawings.
[0048] see figure 1 As shown, it is a schematic cross-sectional view of a nitride semiconductor structure provided by a preferred embodiment of the present invention. It is mainly configured with a stress control layer 6 betw...
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