Top gate type oxide array substrate and preparation method thereof

Abstract

The invention provides a top gate type oxide array substrate and a preparation method thereof. The top gate type oxide array substrate comprises a substrate, a shading layer, a buffer layer, an activelayer, an etching barrier layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source and drain layer, a passivation layer and a pixel electrode layer which are stacked insequence, according to the preparation method, a silicon oxide film layer of which the film quality is close to that of a gate insulating layer is prepared on an active layer to serve as an etching barrier layer, patterning processing is carried out on the etching barrier layer and the active layer together, then the etching barrier layer is etched along with the gate insulating layer, and a parton a channel region of the active layer is reserved; by means of the protection of the etching barrier layer, the active layer is prevented from being eroded or damaged by chemicals in the yellow light and photoresist stripping process, the interface characteristic of the oxide active layer and the gate insulating layer is improved, and then the performance of the top gate type oxide array substrate is improved.

Description

technical field

[0001] The present application relates to the technical field of mobile communication, in particular to a top-gate oxide array substrate and a preparation method thereof. Background technique

[0002] The top-gate oxide thin film transistor is widely used in array substrates because of its small parasitic capacitance, fewer photomask manufacturing processes, and the gate layer and gate insulating layer can protect the channel region of the active layer.

[0003] The performance of the top-gate oxide array substrate depends heavily on the interface properties between the oxide active layer and the gate insulating layer. However, during the manufacturing process of the top-gate oxide array substrate, the photoresist stripper will erode the oxide active layer, resulting in an increase in the surface roughness of the oxide active layer; meanwhile, the photoresist yellowing and the stripping process also It will increase the oxygen vacancy defect state of the oxi...

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