Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof

A solar cell, cuprous oxide technology, applied in circuits, electrical components, final product manufacturing, etc., to achieve the effects of abundant raw materials, high photoelectric conversion efficiency, and stable constant current output

Inactive Publication Date: 2012-03-14
刘畅
View PDF3 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problem that the efficiency of the above cuprous oxide solar cell is low and the lower short-circuit current density seriously affects the performance of the cuprous oxide homojunction solar cell, the invention provides A cuprous oxide thin film solar cell with surface self-texture structure, which can provide stable constant current output and has high photoelectric conversion efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof
  • Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof
  • Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) Growth of n-type cuprous oxide film

[0035] Put the conductive glass into the electrolytic cell, the electrolyte used is a mixture of copper acetate and acetic acid, the concentration of copper acetate is 0.02mol / l, the concentration of acetic acid is 0.08mol / L, and the concentration is 5mol / L by adding hydrogen Sodium oxide solution adjusts the pH to 4.9, applies a constant voltage of -0.03V, and deposits at 60°C for 60 minutes to prepare an n-type cuprous oxide film with a thickness of 1 μm. The X-ray diffraction pattern is as follows image 3 As shown, it shows that the film has no obvious preferred orientation growth direction;

[0036] (2) Growth of p-type cuprous oxide film

[0037] The obtained n-type cuprous oxide film is put into an electrolytic cell, and the electrolytic solution used is a mixed solution of copper sulfate and lactic acid, the concentration of copper sulfate is 0.4mol / L, and the concentration of lactic acid is 5mol / L, and the concentr...

Embodiment 2

[0043] (1) Growth of n-type cuprous oxide film

[0044] Cut the FTO transparent conductive glass into 1×4 cm substrates, then ultrasonically clean with photobleaching detergent for 30-60min, alcohol ultrasonically for 30-60min, then ultrasonically clean with distilled water for 10-30min, and finally put into the drying box Drying; put the dried substrate into the electrolytic cell, the electrolyte used is a mixture of copper acetate and acetic acid, the concentration of copper acetate is 0.02mol / L, the concentration of acetic acid is 0.04mol / L, adjust the pH value to 4, apply -0.1V constant voltage, deposited at 40°C for 30 min, prepared n-type cuprous oxide film with a thickness of 0.1 μm, and its X-ray diffraction pattern was the same as image 3 similar, indicating that the film has no obvious preferred orientation growth direction;

[0045] (2) Growth of p-type cuprous oxide film

[0046]Put the obtained n-type cuprous oxide film into the electrolytic cell, the elect...

Embodiment 3

[0051] (1) Growth of n-type cuprous oxide film

[0052] Clean the conductive glass ultrasonically with photobleaching detergent for 30-60 minutes, ultrasonically clean alcohol for 30-60 minutes, then ultrasonically clean it with distilled water for 10-30 minutes, and finally put it into a drying oven to dry, and then put it into an electrolytic cell. It is a mixture of copper acetate and acetic acid, the concentration of copper acetate is 0.015mol / L, the concentration of acetic acid is 0.06mol / L, and the pH value is adjusted to 4.5 by adding a sodium hydroxide solution with a concentration of 3mol / L dropwise, and -0.01V is applied Constant voltage, deposited at 50°C for 45min, prepared n-type cuprous oxide film with a thickness of 0.6μm, and its X-ray diffraction pattern was the same as image 3 similar, indicating that the film has no obvious preferred orientation growth direction;

[0053] (2) Growth of p-type cuprous oxide film

[0054] The obtained n-type cuprous oxi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to the technical field of solar batteries, in particular to a cuprous oxide thin film solar battery with a surface self-texture structure; a layer of n-type cuprous oxide thin film is deposited on electrically conductive glass; a layer of p-type cuprous oxide thin film with the shape of a pyramid is deposited on the n-type cuprous oxide thin film; and electrodes are arrangedon the electrically conductive glass and the p-type cuprous oxide thin film. A manufacturing method comprises the following step: when the pH value of the electrolyte is 4-5 and the voltage is from minus 0.01V to 0.1V, the n-type cuprous oxide thin film is deposited on the electrically conductive glass; when the pH value of the electrolyte is 11-12 and the voltage is from minus 0.1 V to minus 0.3V, the p-type cuprous oxide thin film is deposited on the n-type cuprous oxide thin film; and the electrodes are manufactured on the electrically conductive glass and the p-type cuprous oxide thin film. The solar battery of the invention can supply stable constant current output and has higher photoelectricity conversion efficiency; and by adopting the manufacturing method, the rapid low-cost pollution-free mass production of the cuprous oxide solar battery is realized.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a cuprous oxide thin-film solar cell with a surface self-textured structure, and also to a preparation method of the cuprous oxide thin-film solar cell. Background technique [0002] Cuprous oxide is a direct bandgap semiconductor material, which has the advantages of abundant raw materials, cheap price, environmental friendliness, high absorption coefficient for visible light, high electron / carrier mobility, and large minority carrier diffusion length. The field has great application prospects. Cuprous oxide film preparation methods include thermal oxidation, magnetron sputtering, pulsed laser deposition, etc. These preparation methods consume a lot of energy, expensive instruments, and high production costs. Relatively speaking, the electrochemical deposition method has low production costs and equipment Simple and suitable for mass production. On the other ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 刘畅曹丙强胡夕伦
Owner 刘畅
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap