The application discloses a MEMS sensor for continuous
infrared spectrum detection and a preparation method thereof. The preparation method comprises the following steps: after cleaning a
silicon substrate, depositing a first
oxide layer and a second
oxide layer on the front and back surfaces of the
silicon substrate respectively,
processing a
metal thin film on the surface of the first
oxide layer, depositing an
infrared narrow-band filter film, performing patterning and
etching to obtain a movable structure,
etching the back surface of the first
silicon substrate to make the movable structure suspended; cleaning and double-side oxidizing a second silicon substrate, preparing a first
electrode layer, a pyroelectric film, a second
electrode layer and a
metal black
infrared absorption layer on the surface of the first
silicon oxide film, performing patterning and
etching to obtain a second silicon substrate with a back cavity structure, and bonding the MEMS
scanning mirror and the pyroelectric
infrared detector. The movable structure prepared by the above preparation method is combined with the bonding of the pyroelectric
infrared detector, the angle of the movable structure in the MEMS
scanning mirror is modulated to realize
continuous spectrum scanning in a certain waveband range, and the sensor structure is simplified.