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Single crystal copper growth process

A technology of single crystal copper and process, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low purity of single crystal copper, high preparation cost, complicated operation process, etc., to increase the preparation purity and reduce the difficulty , cost reduction effect

Inactive Publication Date: 2021-12-17
HUAIAN HONGXIANG PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a single crystal copper growth process, to solve the existing single crystal copper production preparation method proposed in the above-mentioned background technology, the operation process is complicated, and the single crystal copper purity of production is lower, and the preparation cost is higher, which is not necessary. The problem of facilitating large-scale industrial production

Method used

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  • Single crystal copper growth process

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preparation example Construction

[0021] see figure 1 , the present invention provides a technical solution: a single crystal copper growth process, the specific preparation method steps of the single crystal copper are as follows:

[0022] Heating: Take 4-6 parts of polycrystalline copper, press 4-6 parts of polycrystalline copper through a pressing tool, place the pressed polycrystalline copper inside the crucible, and place the crucible with polycrystalline copper at a high temperature to drop Inside the furnace, continue to heat up the high-temperature drop furnace until the temperature of the high-temperature drop furnace rises to 1150-1350 degrees Celsius, and then vacuumize the inside of the high-temperature drop furnace to 0.001-0.002Pa;

[0023] Heat preservation: when the temperature reaches the range of 1150-1350 degrees Celsius, pour an inert protective gas into the high-temperature descending furnace, and then continue to heat up the high-temperature descending furnace until the temperature is 180...

Embodiment 1

[0033] The concrete preparation method step flow process of this single crystal copper is as follows:

[0034] Heating: Take 4 parts of polycrystalline copper, press the 4 parts of polycrystalline copper through a pressing tool, place the pressed polycrystalline copper inside the crucible, and place the crucible with polycrystalline copper inside the high-temperature drop furnace, Continue to heat up the high-temperature drop furnace until the temperature of the high-temperature drop furnace rises to 1150 degrees Celsius, and then vacuumize the inside of the high-temperature drop furnace to 0.001Pa;

[0035] Insulation: When the temperature reaches 1150 degrees Celsius, pour inert protective gas into the high-temperature descending furnace, and continue to heat up the high-temperature descending furnace until the temperature reaches 1800 degrees Celsius after pouring inert protective gas, keep the temperature unchanged, and continue Keep warm for 1 hour to quickly melt the pol...

Embodiment 2

[0039] The concrete preparation method step flow process of this single crystal copper is as follows:

[0040] Heating: Take 5 parts of polycrystalline copper, press 5 parts of polycrystalline copper through a pressing tool, place the pressed polycrystalline copper inside the crucible, and place the crucible with polycrystalline copper inside the high-temperature drop furnace, Continue to heat up the high-temperature drop furnace until the temperature of the high-temperature drop furnace rises to 1250 degrees Celsius, and then vacuumize the inside of the high-temperature drop furnace until it reaches 0.0015Pa;

[0041] Insulation: When the temperature reaches 1250 degrees Celsius, pour inert protective gas into the high-temperature descending furnace, and continue to heat up the high-temperature descending furnace until the temperature reaches 1850 degrees Celsius, keep the temperature unchanged, and continue Keep warm for 1.5 hours to quickly melt the polycrystalline copper i...

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Abstract

The invention belongs to the technical field of single crystal copper production, and particularly relates to a single crystal copper growth process which comprises the steps of heating, specifically, taking 4-6 parts of polycrystalline copper, pressing 4-6 parts of polycrystalline copper through a pressing tool, placing the pressed polycrystalline copper in a crucible, putting the crucible filled with the polycrystalline copper into a high-temperature descending furnace, continuously heating the high-temperature descending furnace until the temperature of the high-temperature descending furnace is increased to 1150-1350 DEG C, and then vacuumizing the interior of the high-temperature descending furnace until the pressure of the interior of the high-temperature descending furnace is 0.001-0.002 Pa; and conducting heat preservation, specifically, and when the temperature reaches the range of 1150-1350 DEG C, injecting inert protective gas into the high-temperature descending furnace. According to the specific production method of the single crystal copper, in the heat preservation process, protection is conducted through the inert protective gas, a temperature field is simulated through a computer, descending is controlled through a parameter program, sequential crystallization is conducted through a Bridgman-Stockbarger method, not only is the production cost reduced, but also the difficulty is reduced, and the preparation purity of the single crystal is increased.

Description

technical field [0001] The invention relates to the technical field of single crystal copper production, in particular to a single crystal copper growth process. Background technique [0002] Copper is one of the most commonly used metals in human society. Because of its good electrical conductivity, thermal conductivity, ductility and corrosion resistance, it is widely used in electrical, light industry, machinery manufacturing, construction industry, defense industry and other fields , second only to aluminum in the consumption of non-ferrous metal materials in China. At the same time, copper has the characteristics of large reserves and high reuse rate, which makes the cost of copper relatively low and is more suitable for a wide range of applications. Compared with polycrystalline copper, single crystal copper has no grain boundary restrictions, and its performance is stronger than polycrystalline copper in all aspects, such as higher electrical conductivity, better mec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/02C30B33/02
CPCC30B11/006C30B29/02C30B33/02
Inventor 沈承刚沈琨沈振宇毕少东
Owner HUAIAN HONGXIANG PHOTOELECTRIC TECH
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