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Preparation method of single crystal copper

A single crystal copper and polycrystalline copper technology, applied in the field of materials, can solve the problem of many impurities in single crystal copper, achieve excellent performance, realize industrialized preparation, and improve surface cleanliness and preparation efficiency.

Active Publication Date: 2021-06-04
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing single crystal copper, aiming at solving the technical problems such as the single crystal copper obtained by the existing single crystal copper preparation method has many impurities

Method used

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  • Preparation method of single crystal copper
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  • Preparation method of single crystal copper

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preparation example Construction

[0031] The embodiment of the present invention provides a method for preparing single crystal copper, which includes the following steps:

[0032] S1. Provide polycrystalline copper and a container, and the container is provided with at least one through hole;

[0033] S2. The polycrystalline copper is placed in a container and subjected to annealing treatment to obtain single crystal copper.

[0034] In the preparation method of single crystal copper provided in the embodiment of the present invention, polycrystalline copper is placed in a container for annealing treatment, and various impurities such as quartz slag and dust particles in the annealing process are removed by using the confined space of the container. It is isolated from the outside of the container, so as to avoid the above-mentioned impurities from causing impurity pollution to the obtained single crystal copper, which not only greatly improves the surface cleanliness and preparation efficiency of the obtaine...

Embodiment 1

[0049] This embodiment provides a method for preparing single crystal copper foil, the steps are as follows:

[0050] (11) Place the polycrystalline copper foil with a width of 20 cm and a length of 40 cm in the graphite box (the side wall of the graphite box is provided with multiple through holes), put it into the chemical vapor deposition equipment, and feed the protective gas , the protective gas flow rate is 600 sccm, the working pressure is normal pressure, and the protective gas is Ar;

[0051] (12) After the protective gas is introduced, the temperature begins to increase, the heating time is 60min, the temperature is raised to 1000°C, and H 2 Gas, H 2 The flow rate is 100sccm;

[0052] (13) Keep the temperature constant and perform annealing treatment. The annealing time is 30 minutes. After the annealing is completed, an ultra-clean single crystal copper foil is obtained. The width of the single crystal copper foil is 20 cm, the length is 40 cm, and the cleanliness...

Embodiment 2

[0054] This embodiment provides a method for preparing single crystal copper foil, the steps are as follows:

[0055] (21) The polycrystalline copper foil with a width of 20cm and a length of 40cm is placed flat in a graphite box (the graphite box is consistent with Example 1), puts it into a chemical vapor deposition device, and feeds a protective gas. The gas flow rate is 600sccm, the working pressure is normal pressure, and the protective gas is Ar;

[0056] (22) After the protective gas is introduced, the temperature starts to increase, the heating time is 60min, the temperature is raised to 800°C, and H 2 Gas, H 2 The flow rate is 100sccm;

[0057] (23) Keep the temperature constant and perform annealing treatment. The annealing time is 50 minutes. After the annealing is completed, an ultra-clean single crystal copper foil is obtained. The width of the single crystal copper foil is 20 cm, the length is 40 cm, and the cleanliness is 99.5%.

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Abstract

The invention belongs to the technical field of materials, and particularly relates to a preparation method of single crystal copper. According to the preparation method of the single crystal copper, polycrystalline copper is placed in a graphite container to be subjected to annealing treatment, various impurities such as quartz slag and dust particles in the annealing treatment process are isolated outside the graphite container through the confinement space effect of the graphite container, and therefore impurity pollution caused by the impurities to the obtained single crystal copper is avoided; the surface cleanliness and the preparation efficiency of the obtained single crystal copper are greatly improved, the large-size single crystal copper can be obtained, and the obtained single crystal copper has more excellent performance. The preparation method provided by the invention is simple to operate, does not need to carry out complex and diverse surface pretreatment on the polycrystalline copper, and is favorable for realizing industrial preparation of the single crystal copper.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a preparation method of single crystal copper. Background technique [0002] Copper is one of the most commonly used metals in human society. Because of its good electrical conductivity, thermal conductivity, ductility and corrosion resistance, it is widely used in electrical, light industry, machinery manufacturing, construction industry, defense industry and other fields , second only to aluminum in the consumption of non-ferrous metal materials in China. At the same time, copper has the characteristics of large reserves and high reuse rate, which makes the cost of copper relatively low and is more suitable for a wide range of applications. [0003] Compared with polycrystalline copper, single crystal copper has no grain boundary restrictions, and its performance is stronger than polycrystalline copper in all aspects, such as higher electrical conductivity, bette...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B1/02C30B29/02C22F1/08C22F1/02C21D9/46
CPCC30B1/02C30B29/02C22F1/08C22F1/02C21D9/46Y02P10/20
Inventor 邹定鑫田圳张振生赵悦俞大鹏
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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