Device for improving luminous efficiency of silicon nitride-based thin-film light-emitting diode and preparation method of device

A technology of light-emitting diodes and silicon nitride films, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the injection barrier, unfavorable for light output, and reducing the surface emission efficiency of light, and achieves improved luminous intensity, Achieve the effect of silicon-based monolithic optoelectronic integration and improved luminous efficiency
CN103474541AInactive Publication Date: 2013-12-25HANSHAN NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HANSHAN NORMAL UNIV
Publication Date
2013-12-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a device for improving the luminous efficiency of a silicon nitride-based thin-film light-emitting diode and a preparation method of the device, and belongs to the technical field of semiconductor luminescent devices. The preparation method mainly comprises the following steps: a p-Si layer is used as a hole-injection layer, and an ultrathin noncrystalline silicon thin film is deposited on the hole-injection layer; a silicon nitride-based thin film is deposited on the ultrathin noncrystalline silicon thin film to serve as a light-emitting active layer; the ultrathin noncrystalline silicon thin film is placed in an annealing furnace to be subjected to dehydrogenation annealing and steady state high temperature annealing in sequence, so that the ultrathin noncrystalline silicon thin film is converted into a nanometer silicon thin film; then, an AZO transparent conducting thin film provided with an optical window is deposited on the silicon nitride-based light-emitting active layer. The device for improving the luminous efficiency of the silicon nitride-based thin-film light-emitting diode and the preparation method of the device mainly have the advantages that ultrathin nanometer silicon is used as a hole blocking layer in the device to effectively restrain hole carriers from being injected excessively, therefore, balanced injection of electrons and holes is promoted, and the luminous efficiency of the device is improved. The preparation process is simple, good in controllability, and compatible with a current microelectronic process.
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Description

technical field

[0001] The invention relates to a device for improving the luminous efficiency of a silicon nitride-based thin-film light-emitting diode and a preparation method thereof, in particular to a device that uses ultra-thin nano-silicon as a hole blocking layer to suppress excessive injection of hole carriers in a light-emitting device. Thereby, the balanced injection of electrons and holes is promoted, and the luminous efficiency of the device is improved. The invention belongs to the technical field of semiconductor light emitting devices. Background technique

[0002] The optoelectronic integration based on semiconductor silicon-based materials is the core of the new generation of semiconductor devices in the 21st century and the hardware foundation of modern information technology. The silicon-based light source is one of the core and basic elements to realize Si monolithic optoelectronic integration. This is not only a major research topic in the field of mat...

Claims

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