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High-efficiency organic single-layer light-emitting diode and preparation method thereof

A light-emitting diode, high-efficiency technology, used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as reducing device efficiency, achieve balanced injection and transmission, improve performance, and improve efficiency.

Inactive Publication Date: 2018-05-18
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a double-layer organic electroluminescent device, the recombination region is at the interface of the hole transport layer and the electron transport layer, (Appl.Phys.Lett.51913 (1987)) Existence, the recombination of holes and electrons will be completed in the process of transport, otherwise the transported holes and electrons will form a dark current, thereby reducing the efficiency of the device

Method used

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  • High-efficiency organic single-layer light-emitting diode and preparation method thereof
  • High-efficiency organic single-layer light-emitting diode and preparation method thereof
  • High-efficiency organic single-layer light-emitting diode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Sonicate the etched ITO conductive glass twice for 15 minutes with the lotion solution, deionized water, acetone, and ethanol in sequence. After the cleaned ITO conductive glass is blown dry with nitrogen, it is placed in an ultraviolet ozone instrument for 5 minutes, and finally the glass substrate is placed in a vacuum coating system. The organic material is placed in different evaporation sources, and the temperature of each evaporation source can be controlled individually. When the vacuum degree of the vacuum coating system reaches 5×10 -4 When below Pascal, a 1 nm hole injection layer MoO is evaporated on the anode 3 , 100nm light-emitting layer TPBi: Ir(ppy) 3 ,Ir(ppy) 3 The mass fraction of the light-emitting layer accounts for 33% of the mass of the entire light-emitting layer, the electron injection layer LiF of 0.7 nanometers and the thick metal cathode Al of 150 nanometers, and the part where the two electrodes intersect each other forms the light-emittin...

Embodiment 2

[0036]Sonicate the etched ITO conductive glass twice for 15 minutes with the lotion solution, deionized water, acetone, and ethanol in sequence. After the cleaned ITO conductive glass is blown dry with nitrogen, place it in a UV ozone instrument for 5 minutes, then put the pretreated ITO glass and chloroform solvent into a closed glass reactor, and then treat it with UV for 2 minutes . Finally, put the glass substrate into the vacuum coating system. The organic material is placed in different evaporation sources, and the temperature of each evaporation source can be controlled individually. When the vacuum degree of the vacuum coating system reaches 5×10 -4 Below Pascal, on the anode, 90nm light-emitting layer TPBi: Ir(ppy) 3 ,Ir(ppy) 3 The mass fraction of the light-emitting layer accounts for 33% of the mass of the entire light-emitting layer, the electron injection layer LiF of 0.7 nanometers and the thick metal cathode Al of 150 nanometers, and the part where the two e...

Embodiment 3

[0038] Sonicate the etched ITO conductive glass twice for 15 minutes with the lotion solution, deionized water, acetone, and ethanol in sequence. After the cleaned ITO conductive glass is blown dry with nitrogen, it is placed in a UV ozone instrument for 5 minutes, and then the pretreated ITO glass and chlorobenzene solvent are put into a closed glass reaction kettle together, and then UV treatment is carried out for 5 minutes. minute. Finally, put the glass substrate into the vacuum coating system. The organic material is placed in different evaporation sources, and the temperature of each evaporation source can be controlled individually. When the vacuum degree of the vacuum coating system reaches 5×10 -4 Below Pascal, on the anode, 90nm light-emitting layer TPBi: Ir(ppy) 3 ,Ir(ppy) 3 The mass fraction of the light-emitting layer accounts for 33% of the mass of the entire light-emitting layer, the electron injection layer LiF of 0.7 nanometers and the thick metal cathode...

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Abstract

The invention relates to a high-efficiency organic single-layer light-emitting diode and a preparation method thereof. The structure of the diode is sequentially provided with a glass substrate, a chlorinated indium tin oxide, a light-emitting layer, an electron injection layer and a metal cathode from bottom to top, wherein the organic single-layer light-emitting diode is not provided with a holetransport layer or an electron transport layer; and the light-emitting layer is a unique organic material of a device. Used chlorinated solvents are chloroform, chlorobenzene and dichlorobenzene separately. After the indium tin oxide is subjected to ultraviolet treatment through the chlorinated solvents, the work function is increased and the hole injection capacity is improved. The performance of the device of which the indium tin oxide is chlorinated by using the dichlorobenzene is the best, the maximum current efficiency is 33.48 candelas per ampere and the maximum power efficiency is 27.51 lumens per watt.

Description

technical field [0001] The present invention relates to the field of organic electroluminescent devices (OLEDs). More specifically, the present invention relates to an organic single-layer electroluminescent device and a method for its simple preparation. Background technique [0002] With the advancement of science and technology, display technology is gradually developing from traditional methods such as cathode ray tubes and liquid crystal displays to large-area, bendable, ultra-thin, and ultra-light technologies. Organic electroluminescent device (OLED) is an impressive solid-state flat-panel display technology developed in recent years. Compared with other display technologies, OLED has low DC voltage drive, low power consumption, self-luminescence, simple structure, super Due to the advantages of thinness, fast response, wide viewing angle, and flexibility, it has become one of the most promising technologies in the field of optoelectronic devices and flat panel displ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/56
CPCH10K71/60H10K50/81
Inventor 张宏梅吴震轩
Owner NANJING UNIV OF POSTS & TELECOMM
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