47results about How to "Strong luminous brightness" patented technology

There is provided a lead frame for an optical semiconductor device, an optical semiconductor device using such lead frame, and a manufacturing method for these, where the optical semiconductor device exhibits favorable brightness over a long period of time by preventing discoloration and degeneration of a plating layer provide on the lead frame and a resulting reduction in a reflection coefficient for light emitted from a light emitting element, even when using silicone resin as a sealing resin. An Ag-Au alloy plating layer 22 is formed on the surface of a pure Ag plating layer 21 on a lead frame 10 sealed chloroplatinic acid-containing silicon resin, so as to prevent direct contact between the layer 21 and the silicone resin. This suppresses the formation of AgCl due to a reaction with a hardening catalyst of the silicon resin, thereby preventing the Ag plating layer from turning a blackish-brown color.

The object of the present invention is to provide a scintillator plate and a radiation detection panel demonstrating excellent light emission luminance while being limited to a thickness which maintains the sharpness required for image quality. A scintillator plate comprising an undercoat layer and a phosphor layer, wherein the phosphor layer comprises phosphor columnar crystals using the undercoat layer side as a base, and wherein when the phosphor layer is halved in terms of thickness in the lamination direction and the respective halves constitute a tip side portion and a base side portion of the phosphor columnar crystals, a ratio (B / A) of an optical transmittance (B) of the base side portion to an optical transmittance (A) of the tip side portion is not less than 70% and not more than 99%.

This invention provides a dispersion-type EL element that has excellent luminescence brightness and durability and an improved service life. A dispersion-type EL element, which can realize a larger screen, has excellent luminescence brightness and durability and an improved service life, is also provided. The dispersion-type electroluminescent element comprises a pair of electrodes of a back electrode and a transparent electrode, and at least an insulating layer and a fluorescent substance particle-containing luminescent layer provided between the pair of electrodes. The average size of the fluorescent substance particles is not less than 1 [mu]m and less than 20 [mu]m, and the coefficient of variation of the particle size is not less than 3% and less than 35%. At least one barrier layer comprising at least one material selected from the group consisting of thermoplastic resins, heat curing resins, and UV curing resins is provided between the transparent electrode and the luminescent layer.

The fluorescent material has the composition of (SraMbNcLd)SiOn, where, M is one or several selected from Mg, Ca, Ba, Zn, Li, Na and K; N is one or several selected from Li, Na and K; L is one or several selected from Mn, Cu, Sn, Sb, Bi, Pb and RE elements; a has the selection range of 2.5-3.5; b has the selection range of 0.001-0.5; c has the selection range of 0.001-0.5; d has the selection range of 0.001-0.5; and n has the selection range of 4.7-5.5. The present invention also provides the preparation process of the fluorescent material and the LED, planar display and other light emitting devices with the fluorescent material.

An organic electroluminescence element, which has an electrode and at least one organic layer on a substrate, is characterized in that the film density of at least one of the organic layers is 1.10-1.25 g / cm3. It is possible to provide organic EL elements, display devices and lighting devices using the same. The organic EL elements show good luminance, voltage rise when driven by a constant current, less black spots, and stability over time under high temperature and high humidity. high sex.

The invention discloses a high-temperature-resistant silicate luminescent ceramic glaze and a preparing method thereof. The luminescent ceramic glaze is mainly prepared from a rare-earth-activated alkaline-earth-metal-silicate luminescent material and a basis glaze in a sintered mode. According to the high-temperature-resistant silicate luminescent ceramic glaze and the preparing method thereof, the high temperature resistance of the luminescent ceramic glaze is improved in the modes that luminescent crystals are generated through the glaze in the sintering process, and luminescent powder is subjected to covering modification, and therefore the application field of the luminescent ceramic glaze is expanded.

The invention discloses a water-based inorganic flame-retardant luminescent coating, which comprises a flame-retardant coating and a luminescent coating; mixing a water-based flame-retardant binder, an inorganic flame retardant and an inorganic filler, stirring, ultrasonication, stirring and mixing, and adding an inorganic thickener Add the film-forming agent and water repellent to the first solvent, drop ammonia water, and get the second mixed solution with a pH value of 7-9; stir, cool to room temperature, and evaporate the remaining The first solvent and ammonia water are used to completely dissolve the product in the second solvent to obtain a third mixed solution; adding a coupling agent and long afterglow powder and stirring evenly to obtain a luminescent paint. The flame retardant coating in the coating has a more excellent flame retardant effect, which eliminates the high pollution problem caused by organic flame retardants, and causes less harm to the environment; the luminous coating makes the coating water resistant as a whole, and at the same time avoids The adverse effect of flame retardant coatings on long afterglow powder, when a fire occurs, can guide the direction of escape and reduce the loss caused by fire.

The present invention provides a radiation image detector, comprising: a photoelectric conversion element array; a scintillator layer; a reflection layer located opposite to the photoelectric conversion element array across the scintillator layer; an undercoat layer existing between the scintillator layer and the reflection layer, and connected to the scintillator layer in an image forming region;and an intermediate layer existing between the photoelectric conversion element array and the scintillator layer, werhein a portion where the distance from the tip of the scintillator layer to the photoelectric conversion element array is within 50 [mu]m is defined as a scintillator adjacent portion A, a position where the distance from the evaporated surface of the scintillator layer to one sideopposite to the photoelectric conversion element array is within 50 [mu]m is defined as a scintillator adjacent portion B, each of the scintillator adjacent portion A and the scintillator adjacent portion B includes one or more kinds of inorganic substances, and a thermal expansion coefficient difference between the substances having the minimum thermal expansion coefficient included in the scintillator adjacent portion A and the scintillator adjacent portion B is 1.5*10<-5>[ / K] or less.

The invention discloses a multifunctional amphiphilic conjugated molecular material and its preparation method and application. The material is composed of high-efficiency luminescent fluorene and pyrene substances, phosphonate is used as a polar side group, and different alkyl chains are selected. The linear molecular compound, its general structural formula is shown in the following formula: wherein, R is one of C1-C30 alkyl, alkoxy, alkylphenyl, alkylphenoxy, aryl. The material has the advantages of simple chemical structure and low synthesis cost, as well as good solution processing performance, film-forming performance and multifunctional optoelectronic properties. It can be used as a multifunctional material to simultaneously achieve high-brightness blue light emission and efficient cathode interface modification. Organic light-emitting diodes using this material as both the light-emitting layer and the interface layer can use a simplified device structure to achieve excellent optoelectronic characteristics through solution process or inkjet printing, which overcomes the manufacturing obstacles in conventional multilayer devices.

Related to encapsulating structure for semiconductor, the invention includes following parts: basis material of having positive and negative faces; semiconductor setup on the positive and negative faces of the basis material; outline border set made from opaque material on the basis material, and around the semiconductor; high molecular obsturator in use for filling up the outline border set, and capable of letting light source pass in or out of the obsturator. Advantages are: easy of setting procedures, low cost for adding devices, good mechanical strength of basis material; usable traditional encapsulation equipment, and high luminous brightness.

The invention discloses an organic light-emitting superlattice thin film, a preparation method and application thereof, and belongs to the field of organic semiconductor photoelectric materials. The organic light-emitting superlattice film is an organic light-emitting film formed by alternate epitaxial growth of two kinds of two-dimensional organic molecules on the substrate surface, and the two-dimensional organic molecules are selected from perylene-3,4,9,10-tetracarboxylic dianhydride, N,N'-Dimethyl-3,4,9,10-perylenetetracarboximide, N,N'-dioctyl-3,4,9,10-perylenedicarboximide and 3 ,4,9,10‑Tetracarboximide. The preparation method is as follows: the growth source material of the first two-dimensional organic molecule and the substrate are placed in different positions of the tube furnace, and the first layer of organic light-emitting film is epitaxially grown on the surface of the substrate; the growth source material is replaced by the second Two-dimensional organic molecules, grow the second layer of organic light-emitting thin film; repeat the replacement of growth source materials, and alternately grow multi-layer organic light-emitting thin films, that is, organic light-emitting superlattice thin films. The organic light-emitting superlattice thin film has high quality and high luminous intensity, and can be used as a light-emitting layer of an organic light-emitting field effect transistor.

The invention provides a tunnel lighting device with the automatic polymerization function. The tunnel lighting device comprises annular lighting lamps, a light polymerization connecting cover, an installation base, an embedded remote control switch and a mapping mirror. The annular illuminating lamps are arranged at the tops and the bottoms of the left end and the right end in a tunnel. Two rowsof annular illuminating lamps are arranged at the top of each side in the tunnel. One row of annular illuminating lamps is arranged at the bottom of each side in the tunnel. The embedded remote control switch is arranged between the installation base and the annular illuminating lamps through screws. The embedded remote control switch is electrically connected with the annular illuminating lamps.The mapping mirror is an independent part and is independently arranged in the tunnel. By means of the embedded remote control switch and the light polymerization connecting cover, the problems that an existing tunnel lighting device cannot well solve the daytime effect and the nighttime effect generated when a vehicle enters a tunnel in the daytime or at night and drives away from the tunnel, andthe light source regulation and control capacity is limited in the prior art are solved.

The related O-doped silicon-base nitride thin film yellow-green wave range LED comprises: a 40-100nm a-SiNx thin film deposited on 4-20Omegacm P-type monocrystal silicon wafer or ITO glass substrate, a thin film metal electrode coated on the a-SiNx film, a electrode on back of P-type wafer, a electrode formed by ITO itself for light emergence, and a 1ª–m Al thin film as cathode evaporation coated on the active layer. Wherein, the round Al electrode is 3mm in diameter.

The invention discloses a fluorescent powder for a white light LED for lighting display and its preparation and application. The general chemical formula of the phosphor is (Sr 1‑y Ca y ) 2‑x Si 5‑z Al z N 8‑z O z :xEu 2+ . According to the stoichiometric ratio of the general chemical formula, weigh each raw material, and then weigh the co-solvent and impurity-removing reagent; mix and grind; place it in a boron nitride crucible, keep it in a protective atmosphere at high temperature, cool it to room temperature, grind the sintered product, and sieve it , the phosphor powder for white LEDs for illumination display is obtained. The phosphor powder is used in various illumination display devices with near-ultraviolet light as the excitation source. The phosphor solves the problem of reabsorption in the prior art when the near-ultraviolet chip excites three primary color phosphors to form white light, and the low light conversion and energy conversion efficiency, poor uniformity of luminescence, and lack of red light caused by reabsorption. It leads to problems such as poor color rendering, and is suitable for various illumination display devices with near-ultraviolet light as the excitation source.