47results about How to "Lower interface barrier" patented technology

The invention provides an ITO film and a preparation method thereof as well as an LED chip and a preparation method thereof. The preparation method of the ITO film at least comprises the steps that 1) oxygen of high flow is transmitted into a reaction chamber, so that an ITO interfacial layer of high work function and a preset thickness is pre-deposited on a P-GaN layer; and 2) the flow of the oxygen transmitted to the reaction chamber is gradually reduced, so that an ITO current diffusion layer is deposited on the ITO interfacial layer. The preparation method of the ITO film can be used to reduce the driving voltage of the LED chip, and improve the technical efficiency and quality.

The invention discloses an organic light emission diode device. The organic light emission diode device comprises a substrate, a conductive anode, a first hole injection auxiliary layer, a second hole injection auxiliary layer, a hole transmission layer, a light emission layer, an electron transmission layer, an electron injection layer and a cathode which are sequentially laminated, the material of the first hole injection auxiliary layer is molybdenum trioxide, vanadium pentoxide, tungsten trioxide or rhenium oxide, and the material of the second hole injection auxiliary layer is 2,3,6,7,10,11- hexcyano-1,4,5,8,9,12-hexaazatriphenylene. The invention also discloses a fabrication method of the organic light emission diode device. According to the fabrication method of the organic light emission diode device provided by the invention, through additional arrangement of dual hole injection auxiliary layers in the conductive anode and the hole transmission layer, hole injection capability is improved, and the organic light emission diode device prepared according to the fabrication method thereof has low driving current and high luminous efficiency.

The invention discloses a production method of a novel hyperbranched sodium sulfonate small-molecular electron transfer layer. The above hyperbranched sodium sulfonate small-molecular electrolyte is prepared through a one-step simple reaction. The production method comprises the following steps: adding tetraethylenepentamine into a dried tetrahydrofuran solution, adding NaH in ice bath and nitrogen atmosphere, performing room temperature stirring for 2 h, rising the temperature of the obtained reaction solution to 50 DEG C, reacting the reaction solution overnight, adding excess 1,4-butanesultone through a constant-pressure dropping funnel, cooling the obtained solution to room temperature after the reaction is finished, performing suction filtration, collecting obtained filter residues, dissolving the filter residues in deionized water, and performing dialysis purification by a dialysis bag with the aperture being 1000 in order to obtain the pale yellow target product PNSO3Na. A hyperbranched side chain polar group makes the small molecule realize processing of water, alcohol and other environmentally-friendly polar solvents and form an interface dipole, so the water content is reduced, and the interface contact is improved. The novel hyperbranched sodium sulfonate small-molecular electron transfer layer can be used as a good cathode interface layer for photovoltaic cells, LEDs and FETs.

An organic electroluminescent device comprises a glass substrate, an anode, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. The anode is composed of a first lanthanide oxide layer, a metal layer and a second lanthanide oxide layer which are successively laminated, wherein a first lanthanide oxide and a second lanthanide oxide are selected from at least one of praseodymium dioxide, praseodymium oxide, ytterbium trioxide and samarium oxide. The metal layer contains a first metal layer and a second metal layer doped in the first metal layer, wherein the first metal layer is selected from at least one of silver, aluminium, platinum and gold; the second metal layer is metal with work function being minus 4.0eV- minus 2.0eV; and mass of the second metal layer accounts for 1 wt%-10wt% of mass of the first metal layer. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

The invention provides an organic electroluminescence device. The organic electroluminescence device comprises a glass substrate, and an anode, a scattering layer, an organic light-emitting functional layer and a cathode which are sequentially arranged on the glass substrate in a stacked manner; the scattering layer comprises a first doped layer, a ferric salt layer and a second doped layer which are sequentially arranged on the anode in a stacked manner; the first doped layer is made of a mixed material of an organic material and ferric salt, and the second doped layer is made of a mixed material of the organic material and titanium dioxide; the organic material is one of 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8, -tetracyano-benzoquinodimethane, 4, 4, 4-tri(naphthyl-1-phenyl-ammonio) triphenylamine and dinaphthyl-N, N'-diphenyl-4, 4'-benzidine. The scattering layer is additionally arranged in the structure of the organic electroluminescence device, so that the light-emitting efficiency and the luminous efficiency of the device can be improved. The invention also provides a manufacturing device of the organic electroluminescence device.

The invention discloses an application of a photoexcited gas-sensitive sensing test system. The application comprises the following steps: placing a sensor for a broadband gap semiconductor in the test chamber of a semiconductor tester at room temperature, introducing a gas to be tested into the test chamber of the semiconductor tester, making an ultraviolet light source close to the test chamberof the semiconductor tester, connecting the sensor for the broadband gap semiconductor with the semiconductor tester, and detecting the obvious increase of the response value of induced current by thesemiconductor tester. Electrons and holes introduced by illumination change the state of defects in a material, change the adsorption capacity and the adsorption center concentration of metal oxide semiconductor surfaces, and effectively improve the response performances of the surfaces, so gas-sensitive elements can realize the application and test process of the sensor under low working temperature conditions.

The invention discloses a preparation method of a hyperbranched conjugate polymer electrolyte cathode interface layer containing quaternium terminal ion groups. Firstly, 2,7-dibromo-9-(6-bromohexane)carbazole and tris-[4-(4,4,5,5-tetramethyl-[1,3,2]dioxaborolan-2-yl)-phenyl]-amine are subjected to a coupling reaction to obtain the hyperbranched conjugate polymer, the polymer reacts with a tetrahydrofuran solution of trimethylamine to be ionized to obtain the target hyperbranched conjugate polymer electrolyte. Due to the fact that multiple alkyl quaternium side chains are contained, the polymercan form interface dipoles, the interface barrier is lowered, and environment-friendly water/alcohol dissolubility processing is achieved. Meanwhile, the hyperbranched conjugate polymer electrolyte can be subjected to the high interface interaction with a lower layer substrate due to the hyper branched characteristics to form ordered arrangement through self-assembling, then, an upper layer active layer is induced to form ordered arrangement, the problem that the morphology of the active layer is poor is solved, the carrier mobility is improved, and therefore the short-circuit current and a filling factor of the device are improved, and finally the photoelectric conversion efficiency of the device is improved.

An organic electroluminescent device comprises a glass substrate, an anode, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. The material of the hole injection layer is a lanthanide oxide coated with titanium dioxide. The lanthanide oxide is selected from at least one of praseodymium dioxide, praseodymium oxide, ytterbium trioxide and samarium oxide, wherein particle size of titanium dioxide is 5nm-20nm. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

The invention discloses a perovskite photovoltaic cell for passivating adjacent interfaces of photosensitive layers by an MoS2 nanosheet and a preparation method of the perovskite photovoltaic cell. The cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode; the cell further comprises an interface passivation layer, wherein the interface passivation layer is a MoS2 nanosheet; the MoS2 nanosheet is prepared by a ball milling method; and the interface passivation layer is located between the electron transport layer and the perovskite photosensitive active layer or between the perovskite photosensitive active layer and the hole transport layer. The MoS2 nanosheet obtained through a simple ball milling method has a large specific surface area and mesopores, contact between the MoS2 nanosheet and a perovskite photosensitive layer and an interface layer is effectively enlarged, migration channels of carriers are increased, accumulation of the carriers at the interface is reduced, the extraction rate of the interface layer to the carriers is balanced, and interface recombination is reduced, so that the interface regulation and control technology with high efficiency, long service life, low cost, good stability and high efficiency and a corresponding photovoltaic device are developed.

The invention relates to a high-efficiency non-doped electro-induced long-wave red light arylamine diphenyl trans-butene dinitrile derivative, and belongs to the technical field of luminescent materials; arylamine diphenyl is bis(4-(N-(2-spirobifluorenyl)-3,5-xylylamine)phenyl), bis(4-(N-(4-biphenyl)-9,9-diethyl-2-fluoreneamine)phenyl) or bis(4-(N,N-bis(4-biphenyl)amino)phenyl). According to the arylamine diphenyl trans-butene dinitrile derivative, large-volume and large-conjugate group is introduced, so the luminous efficiency of the material and devices is enhanced, and the light-emitting wavelength moves towards the long-waveband red light; meanwhile, the organic light-emitting color can be effectively adjusted by introducing different groups; in addition, by introducing the groups, theinterlayer interface potential barrier can be reduced, the design of red non-doped organic light-emitting devices is optimized, and the light-emitting efficiency of the devices is effectively improved.

An organic light emitting device comprises a conductive anode substrate, a cathode, an anode layer, at least two organic light emitting units and charge generating layers, wherein the organic light emitting units are stacked between the anode layer of the conductive anode substrate and the cathode, and the charge generating layers are arranged between the adjacent organic light emitting units. Each charge generating layer comprises an n-type layer and a p-type layer which are stacked, the n-type layer is adjacent to the anode layer and comprises an organic doping layer and an inorganic layer which are stacked sequentially, the p-type layer is adjacent to the cathode and is stacked on the surface of an inorganic layer. The inorganic layer is made of zinc oxide, ceric oxide or stannic oxide, the organic doping layer is composed of host materials and dopant doped in the host materials. The organic light emitting device is high in light emitting efficiency. The invention further provides a manufacturing method of the organic light emitting device.

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The preparation method comprises the following steps: forming a hole transport layer on an anode, wherein the hole transport layer comprises a TFB; covering the hole transport layer with a layer of treatment liquid, and carrying out heating treatment; wherein the treatment liquid comprises a halogen element-containing compound; forming a quantum dot light-emitting layer on the processed hole transport layer; and forming a cathode on the quantum dot light-emitting layer to obtain the quantum dot light-emitting diode. The surface of the TFB hole transport layer is post-processed by using the halogen element-containing compound, and due to the existence of halogen, the HOMO energy level of the TFB can be reduced, so that the interface potential barrier between the TFB and the quantum dots is reduced, the transmission capability of holes from the TFB to the quantum dots is improved, the overall hole transport efficiency of the device is improved, and the luminous efficiency of the device is improved; meanwhile, damage to a functional layer in the device is reduced, and the service life of the device is prolonged.

An organic electroluminescent device comprises a glass substrate, an anode, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. Materials of the hole injection layer contain a lanthanide oxide and a copper oxide and a p-type organic hole material which are doped in the lanthanide oxide. Mass of the copper oxide accounts for 10wt%-30wt% of mass of the lanthanide oxide, and mass of the p-type organic hole material accounts for 0.1wt%-5wt% of mass of the lanthanide oxide. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

The invention belongs to the field of multi-state storage, and discloses an interface type multi-state resistive random access memory based on an electrode stack and a preparation method thereof. Themulti-state resistive random access memory comprises a substrate, and a bottom electrode, an oxygen ion storage layer, an active electrode stack layer and a top electrode which are sequentially deposited on the substrate from bottom to top; the active electrode stack layer comprises a plurality of electrode layers which are sequentially arranged from bottom to top, the plurality of electrode layers are respectively made of active metal materials with different activities, the lowermost electrode layer is in contact with the oxygen ion storage layer, and the uppermost electrode layer is in contact with the top electrode. Under the action of external voltage, the active electrode stack layer can be oxidized step by step through oxygen ions in the oxygen ion storage layer, the oxidation thickness of the active electrode stack layer is changed, the interface barrier height of the active electrode stack layer is further changed, different conductive states are generated, and the resistive random access memory in multiple resistance states is realized.