47results about How to "Lower interface barrier" patented technology

The invention relates to electric conductivity adjustable organic molecular film and semiconductor hybrid material and a preparation method thereof. The preparation method comprises the following steps of: placing a cleaned monocrystalline silicon semiconductor substrate of which an oxidation layer is removed into 1,3,5-trimethylbenzene solvent in which organic molecules are dissolved in a closed quartz container; removing oxygen of the 1,3,5-trimethylbenzene solvent in which the organic molecules are dissolved by using high-purity argon gas or nitrogen gas; and modifying the organic molecules into a polishing surface of the monocrystalline silicon semiconductor substrate by illuminating the closed container or refluxing the 1,3,5-trimethylbenzene solvent in which the organic molecules are dissolved to obtain the electric conductivity adjustable organic molecular film and semiconductor hybrid material. The electric conductivity adjustable organic molecular film and semiconductor hybrid material is characterized in that a monomolecular film of organic molecule with light switch function is modified on the polished surface of the monocrystalline silicon semiconductor substrate. The doping uniformity of the organic molecules in the integral and nanometer range can be met, and the adjustment of the electric conductivity adjustable organic molecular film and semiconductor hybrid material by light with specific wavelength can be realized.

The invention provides an ITO film and a preparation method thereof as well as an LED chip and a preparation method thereof. The preparation method of the ITO film at least comprises the steps that 1) oxygen of high flow is transmitted into a reaction chamber, so that an ITO interfacial layer of high work function and a preset thickness is pre-deposited on a P-GaN layer; and 2) the flow of the oxygen transmitted to the reaction chamber is gradually reduced, so that an ITO current diffusion layer is deposited on the ITO interfacial layer. The preparation method of the ITO film can be used to reduce the driving voltage of the LED chip, and improve the technical efficiency and quality.

The present invention discloses a perovskite photovoltaic cell passivated with Au@CdS nanoparticles. An interface passivation layer is disposed between an electron transport layer and a perovskite photosensitive active layer, or the interface passivation layer is disposed between the perovskite photosensitive active layer and a hole transport layer, or the interface passivation layer is disposed among the electron transport layer, the perovskite photosensitive active layer and the hole transport layer. The interface passivation layer is an Au@CdS nanoparticle coating having a core-shell structure. The perovskite photovoltaic cell suppress its diffusion (to reduce electric leakage) in a device, reduces the interface barrier, achieves effective energy level matching between the hole / electron transport layer and the perovskite photosensitive layer, and balances the respective current carrier extraction rates of the hole transport layer and the electron transport layer so as to achieve a purpose of increasing the short-circuit current and the fill factor of a battery.

The invention discloses an organic light emission diode device. The organic light emission diode device comprises a substrate, a conductive anode, a first hole injection auxiliary layer, a second hole injection auxiliary layer, a hole transmission layer, a light emission layer, an electron transmission layer, an electron injection layer and a cathode which are sequentially laminated, the material of the first hole injection auxiliary layer is molybdenum trioxide, vanadium pentoxide, tungsten trioxide or rhenium oxide, and the material of the second hole injection auxiliary layer is 2,3,6,7,10,11- hexcyano-1,4,5,8,9,12-hexaazatriphenylene. The invention also discloses a fabrication method of the organic light emission diode device. According to the fabrication method of the organic light emission diode device provided by the invention, through additional arrangement of dual hole injection auxiliary layers in the conductive anode and the hole transmission layer, hole injection capability is improved, and the organic light emission diode device prepared according to the fabrication method thereof has low driving current and high luminous efficiency.

The invention discloses a production method of a novel hyperbranched sodium sulfonate small-molecular electron transfer layer. The above hyperbranched sodium sulfonate small-molecular electrolyte is prepared through a one-step simple reaction. The production method comprises the following steps: adding tetraethylenepentamine into a dried tetrahydrofuran solution, adding NaH in ice bath and nitrogen atmosphere, performing room temperature stirring for 2 h, rising the temperature of the obtained reaction solution to 50 DEG C, reacting the reaction solution overnight, adding excess 1,4-butanesultone through a constant-pressure dropping funnel, cooling the obtained solution to room temperature after the reaction is finished, performing suction filtration, collecting obtained filter residues, dissolving the filter residues in deionized water, and performing dialysis purification by a dialysis bag with the aperture being 1000 in order to obtain the pale yellow target product PNSO3Na. A hyperbranched side chain polar group makes the small molecule realize processing of water, alcohol and other environmentally-friendly polar solvents and form an interface dipole, so the water content is reduced, and the interface contact is improved. The novel hyperbranched sodium sulfonate small-molecular electron transfer layer can be used as a good cathode interface layer for photovoltaic cells, LEDs and FETs.

An organic electroluminescent device comprises a glass substrate, an anode, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. The anode is composed of a first lanthanide oxide layer, a metal layer and a second lanthanide oxide layer which are successively laminated, wherein a first lanthanide oxide and a second lanthanide oxide are selected from at least one of praseodymium dioxide, praseodymium oxide, ytterbium trioxide and samarium oxide. The metal layer contains a first metal layer and a second metal layer doped in the first metal layer, wherein the first metal layer is selected from at least one of silver, aluminium, platinum and gold; the second metal layer is metal with work function being minus 4.0eV- minus 2.0eV; and mass of the second metal layer accounts for 1 wt%-10wt% of mass of the first metal layer. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

The invention provides an organic electroluminescence device. The organic electroluminescence device comprises a glass substrate, and an anode, a scattering layer, an organic light-emitting functional layer and a cathode which are sequentially arranged on the glass substrate in a stacked manner; the scattering layer comprises a first doped layer, a ferric salt layer and a second doped layer which are sequentially arranged on the anode in a stacked manner; the first doped layer is made of a mixed material of an organic material and ferric salt, and the second doped layer is made of a mixed material of the organic material and titanium dioxide; the organic material is one of 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8, -tetracyano-benzoquinodimethane, 4, 4, 4-tri(naphthyl-1-phenyl-ammonio) triphenylamine and dinaphthyl-N, N'-diphenyl-4, 4'-benzidine. The scattering layer is additionally arranged in the structure of the organic electroluminescence device, so that the light-emitting efficiency and the luminous efficiency of the device can be improved. The invention also provides a manufacturing device of the organic electroluminescence device.

The invention relates to an indium lanthanum titanium oxide transparent conductive film being applied to the optoelectronic devices such as the liquid crystal display, the electroluminescence device, the solar battery, the organic or inorganic semiconductor laser and the like, which is formed by doping the elements of La and Ti to In2O3 basal body, wherein the mass ratio of Ti to In is 0.002:1 to 0.3:1, and the mass ration of La and Ti to In is 0.005:1 to 0.4:1. The transparent conductive film has the advantages of good chemical stability, better conductive performance, high visible light transmission and high work function, and effectively improves the brightness, the optoelectronic conversion efficiency and the other performance of the optoelectronic device.

The invention discloses an organic electroluminescent device. The organic electroluminescent device comprises a conductive anode substrate as well as a hole injection layer, a hole transport layer, a light-emitting layer, an electronic transmission layer and a cathode which are stacked on an anode layer of the conductive anode substrate in sequence, wherein the hole injection layer comprises a first hole injection auxiliary layer stacked on the anode layer and a second hole injection auxiliary layer stacked on the first hole injection auxiliary layer; the first hole injection auxiliary material is made from iron trifluoride, ruthenium trichloride, osmium trichloride or osmium tetroxide; the second hole injection auxiliary layer is made from 2,3,6,7,10,11- hexacyano-1,4,5,8,9,12-hexaazatriphenylene. According to the organic electroluminescent device disclosed by the invention, a double-hole injection auxiliary layer is adopted to improve injection capability of the hole, so that the light-emitting efficiency of the organic electroluminescent device is improved. The invention further provides a preparation method for the organic electroluminescent device.

The invention discloses an application of a photoexcited gas-sensitive sensing test system. The application comprises the following steps: placing a sensor for a broadband gap semiconductor in the test chamber of a semiconductor tester at room temperature, introducing a gas to be tested into the test chamber of the semiconductor tester, making an ultraviolet light source close to the test chamberof the semiconductor tester, connecting the sensor for the broadband gap semiconductor with the semiconductor tester, and detecting the obvious increase of the response value of induced current by thesemiconductor tester. Electrons and holes introduced by illumination change the state of defects in a material, change the adsorption capacity and the adsorption center concentration of metal oxide semiconductor surfaces, and effectively improve the response performances of the surfaces, so gas-sensitive elements can realize the application and test process of the sensor under low working temperature conditions.

The invention provides low-temperature silver paste and a heterojunction battery. The low-temperature silver paste comprises the following components in parts by weight: conductive silver powder, a silver-indium alloy, composite epoxy resin, a crack growth inhibitor, a titanate coupling agent, a curing agent and a solvent. The invention also provides a heterojunction battery which comprises a TCO substrate and the low-temperature silver paste. The low-temperature silver paste provided by the invention is suitable for different battery base materials and has relatively high contact tension with the battery base materials, a film layer formed after the low-temperature silver paste is cured is low in resistance and has relatively high weldability, and the battery prepared from the low-temperature silver paste has relatively long service life and relatively high light conversion efficiency.

The invention discloses a preparation method of a hyperbranched conjugate polymer electrolyte cathode interface layer containing quaternium terminal ion groups. Firstly, 2,7-dibromo-9-(6-bromohexane)carbazole and tris-[4-(4,4,5,5-tetramethyl-[1,3,2]dioxaborolan-2-yl)-phenyl]-amine are subjected to a coupling reaction to obtain the hyperbranched conjugate polymer, the polymer reacts with a tetrahydrofuran solution of trimethylamine to be ionized to obtain the target hyperbranched conjugate polymer electrolyte. Due to the fact that multiple alkyl quaternium side chains are contained, the polymercan form interface dipoles, the interface barrier is lowered, and environment-friendly water / alcohol dissolubility processing is achieved. Meanwhile, the hyperbranched conjugate polymer electrolyte can be subjected to the high interface interaction with a lower layer substrate due to the hyper branched characteristics to form ordered arrangement through self-assembling, then, an upper layer active layer is induced to form ordered arrangement, the problem that the morphology of the active layer is poor is solved, the carrier mobility is improved, and therefore the short-circuit current and a filling factor of the device are improved, and finally the photoelectric conversion efficiency of the device is improved.

An organic electroluminescent device comprises a glass substrate, an anode, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. The material of the hole injection layer is a lanthanide oxide coated with titanium dioxide. The lanthanide oxide is selected from at least one of praseodymium dioxide, praseodymium oxide, ytterbium trioxide and samarium oxide, wherein particle size of titanium dioxide is 5nm-20nm. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

The invention discloses a preparation method of an n-type triazine naphthalene diimide type COF conjugated polymer cathode interface layer. Synthesized by coupling reaction with 2,4,6-tris(4,4,5,5-tetramethyl-1,3,2-dioxaborane-2-yl)-1,3,5-triazine target product. First, the COF-like two-dimensional dendritic conjugated polymer with siloxane introduced into the side chain enables the material to possess the unique charge transport properties of COF materials; secondly, the lone pair of electrons on the nitrogen atom in the triazine is transferred to the naphthalenediimide It can form a favorable n-type self-doping effect and improve the electrical conductivity of the material; finally, the side chain siloxane-induced assembly and the strong interfacial interaction between the dendrimer and the underlying substrate are used to self-assemble into an ordered arrangement , optimize the morphology of the active layer and improve the carrier mobility, thereby improving the short-circuit current and device efficiency of the device.

The invention discloses a perovskite photovoltaic cell for passivating adjacent interfaces of photosensitive layers by an MoS2 nanosheet and a preparation method of the perovskite photovoltaic cell. The cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode; the cell further comprises an interface passivation layer, wherein the interface passivation layer is a MoS2 nanosheet; the MoS2 nanosheet is prepared by a ball milling method; and the interface passivation layer is located between the electron transport layer and the perovskite photosensitive active layer or between the perovskite photosensitive active layer and the hole transport layer. The MoS2 nanosheet obtained through a simple ball milling method has a large specific surface area and mesopores, contact between the MoS2 nanosheet and a perovskite photosensitive layer and an interface layer is effectively enlarged, migration channels of carriers are increased, accumulation of the carriers at the interface is reduced, the extraction rate of the interface layer to the carriers is balanced, and interface recombination is reduced, so that the interface regulation and control technology with high efficiency, long service life, low cost, good stability and high efficiency and a corresponding photovoltaic device are developed.

The invention relates to a high-efficiency non-doped electro-induced long-wave red light arylamine diphenyl trans-butene dinitrile derivative, and belongs to the technical field of luminescent materials; arylamine diphenyl is bis(4-(N-(2-spirobifluorenyl)-3,5-xylylamine)phenyl), bis(4-(N-(4-biphenyl)-9,9-diethyl-2-fluoreneamine)phenyl) or bis(4-(N,N-bis(4-biphenyl)amino)phenyl). According to the arylamine diphenyl trans-butene dinitrile derivative, large-volume and large-conjugate group is introduced, so the luminous efficiency of the material and devices is enhanced, and the light-emitting wavelength moves towards the long-waveband red light; meanwhile, the organic light-emitting color can be effectively adjusted by introducing different groups; in addition, by introducing the groups, theinterlayer interface potential barrier can be reduced, the design of red non-doped organic light-emitting devices is optimized, and the light-emitting efficiency of the devices is effectively improved.

An organic light emitting device comprises a conductive anode substrate, a cathode, an anode layer, at least two organic light emitting units and charge generating layers, wherein the organic light emitting units are stacked between the anode layer of the conductive anode substrate and the cathode, and the charge generating layers are arranged between the adjacent organic light emitting units. Each charge generating layer comprises an n-type layer and a p-type layer which are stacked, the n-type layer is adjacent to the anode layer and comprises an organic doping layer and an inorganic layer which are stacked sequentially, the p-type layer is adjacent to the cathode and is stacked on the surface of an inorganic layer. The inorganic layer is made of zinc oxide, ceric oxide or stannic oxide, the organic doping layer is composed of host materials and dopant doped in the host materials. The organic light emitting device is high in light emitting efficiency. The invention further provides a manufacturing method of the organic light emitting device.

The invention relates to a thin film transistor, which comprises: an insulating substrate; a gate, the gate is arranged on the surface of the insulating substrate; a gate insulating layer, the gate insulating layer is arranged on the gate A surface away from the insulating substrate; a carbon nanotube structure, the carbon nanotube structure is disposed on the surface of the gate insulating layer away from the grid; wherein, the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube It includes a semiconducting carbon nanotube segment and two metallic carbon nanotube segments respectively connected to the two ends of the semiconducting carbon nanotube segment, and the two metallic carbon nanotube segments serve as source and drain respectively, the Semiconducting carbon nanotube segments serve as channels.

The invention provides a forming method of a transistor. The forming method comprises the steps of forming recessed troughs on a substrate at positions at two sides of a gate electrode; forming stress layers in the recessed troughs, performing doping on the stress layer and forming a source electrode and a drain electrode; performing five-family ion implantation on the stress layer, wherein the implanted five families of ions comprise one or two kinds of antimony ion and bismuth ion, and forming a metal silicide layer on the stress layer. The atomic radius of the antimony ion or the bismuth ion is relatively large, thereby realizing no easy migration in an annealing process. Therefore, in the annealing process and a subsequent process, the antimony ions or the bismuth ions can be easily kept at an interface between the metal silicide layer and the stress layer, thereby reducing an interface barrier between the metal silicide layer and the stress layer, furthermore reducing a series contact resistance at the interface between the metal silicide layer and the stress layer, and improving conductivity at a part between a subsequently formed conductive plug and the source electrode and a part between the conductive plug and the drain electrode.

The invention belongs to the field of multi-state storage, and discloses an electrode stack-based interface type multi-state resistive variable memory and a preparation method thereof. The multi-state resistive variable memory includes a substrate and a bottom deposited sequentially on the substrate from bottom to top electrode, oxygen ion storage layer, active electrode stack layer, and top electrode; the active electrode stack layer includes several electrode layers arranged in sequence from bottom to top, and several electrode layers are made of active metal materials with different activities, and the bottom electrode layer and The oxygen ion storage layer is in contact and the uppermost electrode layer is in contact with the top electrode. Under the action of an applied voltage, the oxygen ions in the oxygen ion storage layer can oxidize the active electrode stack layer step by step, change the oxidation thickness of the active electrode stack layer, and then change the interface barrier height of the active electrode stack layer, resulting in different conductivity. state, realizing a resistive variable memory with multiple resistance states.

The invention discloses a preparation method of a cathode interface layer with a high air stability. The preparation method comprises the following steps: carrying out a Suzuki coupling reaction on 2-(9,9-bis(6-bromohexyl)-9H-fluorene)-4,4,5,5-tetramethyl-oxaborolane and 4,7-dibromobenzothiadiazole to prepare a fluorene and benzothiadiazole compound, ionizing the fluorene and benzothiadiazole compound by trimethylamine, and carrying out ion exchange by lithium bis(trifluoromethanesulfonyl)imide or lithium bis(pentafluoroethanesulfonyl)imide to obtain the final product. A side chain contains apolar ion group and an F atom, so that the polymer can form a dipole on the interface, reduces the interface potential barrier, improves interface contact, realizes processing of polar non-halogen solvents such as N,N-dimethylformamide and dimethyl sulfoxide, and is environmentally friendly. The existence of the F atom makes the material have a hydrophobic function and improves the stability of the material in air, so that the stability of an organic solar cell device in air is improved.

The invention discloses a preparation method of a hyperbranched conjugated polymer electrolyte electron transport layer. For the first time, 2,7-dibromo-9,9'-di(1-sodium sulfonate butyl)fluorene and tris-[4-(4,4,5,5-tetramethyl-[1,3,2]dioxaborolan-2-yl)-phenyl]-amine are subjected to a simple Suzuki coupling reaction to prepare a conjugated polymer electrolyte of fluorene containing a hyperbranched sodium sulfonate polar side chain and triphenylamine. Due to containing a plurality of polar sodium sulfonate side chains, the polymer can form dipoles at an interface, the interface potential barrier is reduced, the interface contact is improved, and the polymer can realize environment-friendly water / alcohol soluble processing. In addition, due to the hyperbranched property of the hyperbranchedpolymer (containing a plurality of polar side chains), a strong interfacial interaction between the hyperbranched polymer and an underlying substrate can occur to self-assemble into ordered arrays, then an upper active layer is induced to form ordered arrays by using the hyperbranched polymer as a template, the problem of poor morphology of the active layer is solved, and the carrier mobility canbe improved, so that the short-circuit current and the filling factor of a device is improved, and finally the device efficiency is improved.

The invention relates to a perovskite photovoltaic cell based on a P-type Au@Cu2-xS interface passivation layer material and a preparation method thereof. The cell structurally comprises a transparentconductive substrate, an electron transport layer, a perovskite photosensitive active layer, an interface passivation layer, a hole transport layer and a metal electrode from bottom to top, the interface passivation layer is a coating of Au@Cu2-xS nanoparticles of a core-shell structure, and the thickness of the coating ranges from 20 nm to 150 nm. According to the perovskite photovoltaic cell and the preparation method, the Au@Cu2-xS material with good dispersity and the core-shell structure is prepared by a solution method; the perovskite solar cell is embedded into a hole transport layer / photosensitive layer interface of the perovskite photovoltaic cell; an Au@Cu2-xS near-infrared region is utilized to show relatively strong dual surface plasma resonance absorption characteristics, sothat the absorption spectrum range of a photovoltaic device is widened, the hole density at the interface is remarkably improved, the charge separation and extraction are effectively promoted, and theenergy conversion efficiency of the cell is improved.

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The preparation method comprises the following steps: forming a hole transport layer on an anode, wherein the hole transport layer comprises a TFB; covering the hole transport layer with a layer of treatment liquid, and carrying out heating treatment; wherein the treatment liquid comprises a halogen element-containing compound; forming a quantum dot light-emitting layer on the processed hole transport layer; and forming a cathode on the quantum dot light-emitting layer to obtain the quantum dot light-emitting diode. The surface of the TFB hole transport layer is post-processed by using the halogen element-containing compound, and due to the existence of halogen, the HOMO energy level of the TFB can be reduced, so that the interface potential barrier between the TFB and the quantum dots is reduced, the transmission capability of holes from the TFB to the quantum dots is improved, the overall hole transport efficiency of the device is improved, and the luminous efficiency of the device is improved; meanwhile, damage to a functional layer in the device is reduced, and the service life of the device is prolonged.

The invention discloses a preparation method of a hyperbranched sodium sulfonate small-molecule electron transport layer. The hyperbranched sodium sulfonate small-molecule electrolyte can be prepared through a one-step simple reaction. First, tetraethylenepentamine was added to the dry tetrahydrofuran solution, NaH was added under ice bath and nitrogen atmosphere, stirred at room temperature for 2 hours, then the reaction solution was raised to 50°C for overnight reaction, and excess was added through a constant pressure dropping funnel. 1,4-butane sultone, cooled to room temperature after the reaction, suction filtered, and the filter residue was collected. The obtained filter residue was dissolved in deionized water and purified by dialysis with a dialysis bag with a pore size of 1000 to obtain the light yellow target product PNSO 3 Na. Due to the existence of hyperbranched side chain polar groups, endowing this small molecule can not only realize the processing of environmentally friendly polar solvents such as water and alcohol, but also form interface dipoles, reduce the work function, and improve the interface contact. It can be used as a good cathode interface layer for devices such as photovoltaic cells, LEDs and FETs.

An organic electroluminescent device comprises a glass substrate, an anode, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. Materials of the hole injection layer contain a lanthanide oxide and a copper oxide and a p-type organic hole material which are doped in the lanthanide oxide. Mass of the copper oxide accounts for 10wt%-30wt% of mass of the lanthanide oxide, and mass of the p-type organic hole material accounts for 0.1wt%-5wt% of mass of the lanthanide oxide. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

The invention provides a QLED (Quantum dot Light-Emitting Diode) device, which comprises an anode, a quantum dot light emitting layer bound on the anode, an electron transport layer bound on the quantum dot light emitting layer, a metal buffer layer bound on the electron transport layer and a cathode arranged on the metal buffer layer, wherein the electron transport layer is made of n-type 4H-SiC,and the metal buffer layer is made of a material selected from metal materials capable of forming ohmic contact with the n-type 4H-SiC.

The invention relates to an indium lanthanum titanium oxide transparent conductive film being applied to the optoelectronic devices such as the liquid crystal display, the electroluminescence device, the solar battery, the organic or inorganic semiconductor laser and the like, which is formed by doping the elements of La and Ti to In2O3 basal body, wherein the mass ratio of Ti to In is 0.002:1 to0.3:1, and the mass ration of La and Ti to In is 0.005:1 to 0.4:1. The transparent conductive film has the advantages of good chemical stability, better conductive performance, high visible light transmission and high work function, and effectively improves the brightness, the optoelectronic conversion efficiency and the other performance of the optoelectronic device.

The invention belongs to the field of multi-state storage, and discloses an interface type multi-state resistive random access memory based on an electrode stack and a preparation method thereof. Themulti-state resistive random access memory comprises a substrate, and a bottom electrode, an oxygen ion storage layer, an active electrode stack layer and a top electrode which are sequentially deposited on the substrate from bottom to top; the active electrode stack layer comprises a plurality of electrode layers which are sequentially arranged from bottom to top, the plurality of electrode layers are respectively made of active metal materials with different activities, the lowermost electrode layer is in contact with the oxygen ion storage layer, and the uppermost electrode layer is in contact with the top electrode. Under the action of external voltage, the active electrode stack layer can be oxidized step by step through oxygen ions in the oxygen ion storage layer, the oxidation thickness of the active electrode stack layer is changed, the interface barrier height of the active electrode stack layer is further changed, different conductive states are generated, and the resistive random access memory in multiple resistance states is realized.