QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

A technology of devices and electron transport layers, which is applied in the field of QLED devices and its preparation, can solve problems such as effective carrier injection, reduced migration, and impact on device light extraction efficiency and service life, so as to promote electron transmission, improve efficiency and stability The effect of reducing the contact resistance

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a QLED device and a preparation method thereof, aiming at solving the problem that the effective injection and migration of carriers are reduced due to the high interface barrier between the metal electrode and the electron transport layer of the existing QLED device, thereby affecting The light extraction efficiency and service life of the device

Method used

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  • QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

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Embodiment approach

[0036] As an embodiment, the preparation method of the QLED device includes the following steps:

[0037] S01. An anode substrate is provided, and a quantum dot light-emitting layer is prepared on the anode substrate;

[0038] S02. Prepare an electron transport layer of 4H-SiC material on the quantum dot light-emitting layer;

[0039] S03. preparing a metal buffer layer on the electron transport layer;

[0040] S04. Prepare a cathode on the metal buffer layer.

[0041] In the above step S01, the selection of the anode substrate is as described above, and in order to save space, details are not repeated here. The method for preparing the anode substrate can prepare an anode such as an ITO film on the substrate by magnetron sputtering. Specifically, the cleaned substrate is placed in a magnetron sputtering machine for ITO coating.

[0042]Further, the preparation of the quantum dot luminescent layer on the anode substrate can be realized by methods such as spin coating, prin...

Embodiment 1

[0060] A QLED device comprising an ITO anode, a hole injection layer (PEDOT:PSS, thickness 50nm) combined on the anode, a hole transport layer (poly-TPD, thickness 30nm) combined on the hole injection layer, and a hole injection layer (poly-TPD, thickness 30nm) combined on the hole Quantum dot light-emitting layer (20nm) on the hole transport layer, electron transport layer (4H-SiC, thickness 30nm) combined on the quantum dot light-emitting layer, metal buffer layer (W, thickness 10nm) combined on the electron transport layer, And a cathode (silver, thickness 70nm) disposed on the metal buffer layer.

[0061] The preparation method of the QLED device comprises the following steps:

[0062] The 4H-SiC film is sputtered by radio frequency with 4H-SiC target, the sputtering process is: power 60W, sputtering pressure 0.6Pa, argon flow 50sccm, sputtering time 5min, thickness about 30nm;

[0063] The metal W was prepared by DC sputtering. The sputtering process was as follows: the ...

Embodiment 2

[0065] A QLED device comprising an ITO anode, a hole injection layer (PEDOT:PSS, thickness 50nm) combined on the anode, a hole transport layer (poly-TPD, thickness 30nm) combined on the hole injection layer, and a hole injection layer (poly-TPD, thickness 30nm) combined on the hole Quantum dot light-emitting layer (20nm) on the hole transport layer, electron transport layer (4H-SiC, thickness 130nm) combined on the quantum dot light-emitting layer, metal buffer layer (Ni, thickness 30nm) combined on the electron transport layer, And a cathode (silver, thickness 70nm) disposed on the metal buffer layer.

[0066] The preparation method of the QLED device comprises the following steps:

[0067] 4H-SiC thin film is sputtered by radio frequency with 4H-SiC target, the sputtering process is: power 60W, sputtering pressure 0.6Pa, argon flow 50sccm, sputtering time 15min, thickness about 130nm;

[0068] Metal Ni was prepared by DC sputtering, the sputtering process was as follows: sp...

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Abstract

The invention provides a QLED (Quantum dot Light-Emitting Diode) device, which comprises an anode, a quantum dot light emitting layer bound on the anode, an electron transport layer bound on the quantum dot light emitting layer, a metal buffer layer bound on the electron transport layer and a cathode arranged on the metal buffer layer, wherein the electron transport layer is made of n-type 4H-SiC,and the metal buffer layer is made of a material selected from metal materials capable of forming ohmic contact with the n-type 4H-SiC.

Description

technical field [0001] The invention belongs to the technical field of light-emitting diodes, and in particular relates to a QLED device and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of display technology, quantum dot light-emitting diodes (QLEDs), which use semiconductor quantum dot materials as the light-emitting layer, have attracted extensive attention. Due to the good characteristics of high color purity, high luminous efficiency, adjustable luminous color and stable device, quantum dot light-emitting diodes have broad application prospects in flat panel display, solid-state lighting and other fields. [0003] Although the performance of QLEDs (including device efficiency and lifetime) has been greatly improved through the improvement of quantum dot materials, in the traditional quantum dot light-emitting diode device structure [substrate (glass, flexible material) / transparent anode (such as ITO ) / conducti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
Inventor 朱佩曹蔚然
Owner TCL CORPORATION
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